Performance of UV photodetector of mechanical exfoliation prepared PEDOT:PSS/β-Ga2O3 microsheet heterojunction

Yi Zi-Qi; Wang Yan-Ming; Wang Shuo; Sui Xue; Shi Jia-Hui; Yang Yi-Han; Wang De-Yu; Feng Qiu-Ju; Sun Jing-Chang; Liang Hong-Wei

doi:10.7498/aps.73.20240630

Abstract

Ultrawide-bandgap (4.9 eV) β-Ga₂O₃ material possesses exceptional properties such as a high critical-breakdown field (~8 MV/cm) and robust chemical and thermal stability. However, due to the challenges in the growth of p-type β-Ga₂O₃, the preparation of homojunction devices is difficult. Therefore, the utilization of heterojunctions based on β-Ga₂O₃ provides a viable approach for fabricating ultraviolet photodetectors. Poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS), a p-type organic polymer material, exhibits high transparency in a 250–700 nm wavelength range. Additionally, its remarkable conductivity (>1000 S/cm), high hole mobility (1.7 cm²·V^–1·s^–1), and excellent chemical stability make it an outstanding candidate for serving as a hole transport layer. Consequently, the combination of p-type PEDOT:PSS with n-type β-Ga₂O₃ in a heterojunction configuration provides a promising way for developing PN junction optoelectronic devices.In this study, a β-Ga₂O₃ microsheet with dimensions: 4 mm in length, 500 μm in width, and 57 μm in thickness, is successfully exfoliated from a β-Ga₂O₃ single crystal substrate by using a mechanical exfoliation technique. Subsequently, a PEDOT:PSS/β-Ga₂O₃ organic/inorganic p-n heterojunction UV photodetector is fabricated by depositing the PEDOT:PSS organic material onto a side of the β-Ga₂O₃ microsheet. The obtained device exhibits typical rectification characteristics, sensitivity to 254 nm ultraviolet light, and impressive self-powering performance. Furthermore, the heterojunction photodetector demonstrates exceptional photosensitive properties, achieving a responsivity of 7.13 A/W and an external quantum efficiency of 3484% under 254 nm UV light illumination (16 μW/cm²) at 0 V. Additionally, the device exhibits a rapid photoresponse time of 0.25 s/0.20 s and maintains good stability and repeatability over time. Notably, after a three-month duration, the photodetection performance for 254 nm UV light detection remained unchanged, without any significant degradation. This in-depth research provides a novel perspective and theoretical foundation for developing innovative UV detectors and paving the way for future advancements in the field of optoelectronics.

Keywords:

Authors and contacts

1.
School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, China
2.
School of Integrated Circuits, Dalian University of Technology, Dalian 116024, China

Corresponding author: Feng Qiu-Ju, qjfeng@dlut.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 12075045), the Dalian Technological Innovation Fund Project, China (Grant Nos. 2023JJ12GX016, 2023JJ12GX013, 2022JJ12GX023), the Liaoning Normal University 2022 Outstanding Research Achievements Cultivation Fund, China (Grant No. 22GDL002), and the Liaoning Normal University Education Teaching Reform Research Project, China (Grant No. LSJGJXFF202330).

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References

[1]	Zhang C X, Xu C B, Wen G J, Lian Y F 2018 Opt. Eng. 57 053109 Google Scholar
[2]	Guo D K, Chen K, Wang S L, Wu F M, Liu A P, Li C R, Li P G, Tan C K, Tang W H 2020 Phys. Rev. Appl. 13 024051 Google Scholar
[3]	Wu C, He C R, Guo D K, Zhang F B, Li P G, Wang S L, Liu A P, Wu F M, Tang W H 2020 Mater. Today Phys. 12 100193 Google Scholar
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[5]	Fan M M, Liu K W, Zhang Z Z, Li B H, Chen X, Zhao D X, Shan C X, Shen D Z 2014 Appl. Phys. Lett. 105 011117 Google Scholar
[6]	Yang W, Hullavarad S S, Nagaraj B, Takeuchi I, Sharma R P, Venkatesan T 2003 Appl. Phys. Lett. 82 3424 Google Scholar
[7]	Cicek E, McClintock R, Cho C Y, Rahnema B, Razeghi M 2013 Appl. Phys. Lett. 103 191108 Google Scholar
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[17]	Feng Q J, Dong Z J, Liu W, Liang S, Yi Z Q, Yu C, Xie J Z, Song Z 2022 Micro Nanostruct. 167 207255 Google Scholar
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Cited By

图 1 PEDOT:PSS/β-Ga₂O₃紫外光电探测器的制作流程示意图

Figure 1. Schematic diagram of the preparation processes of the PEDOT:PSS/β-Ga₂O₃-based UV photodetector.

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图 2 (a)单根β-Ga₂O₃微米片的SEM图; (b)单根PEDOT:PSS/β-Ga₂O₃异质结的SEM图

Figure 2. The SEM images for (a) the single β-Ga₂O₃ microsheet and (b) single PEDOT:PSS/β-Ga₂O₃ heterojunction.

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图 3 (a)器件在黑暗和254 nm光照下的I-V曲线, 插图为黑暗条件下器件的I-V曲线; (b) Ag-PEDOT:PSS-Ag的I-V曲线; (c) Ag-β-Ga₂O₃-Ag的I-V曲线

Figure 3. (a) I-V curves of devices under dark and 254 nm light illumination, inset shows the I-V curve of the device in dark; (b) I-V curve of Ag-PEDOT:PSS-Ag; (c) I-V curve of Ag-β-Ga₂O₃-Ag.

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图 4 零偏压下, 器件在不同光功率密度下的响应I-t曲线

Figure 4. I-t curves of the device under various light intensity at 0 V bias.

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图 5 单个周期的响应-恢复时间曲线

Figure 5. Response-recovery time curve of device for a single cycle.

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图 6 器件的响应度和EQE随光功率密度的变化

Figure 6. Responsivity and EQE of the device under various light intensities.

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图 7 3个月后, 器件在0 V偏压下的时间响应

Figure 7. Time response of the device at 0 V bias after retested three months.

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图 8 PEDOT:PSS/β-Ga₂O₃异质结光电器件在254 nm和0 V偏压下的能带图

Figure 8. Schematic energy-band diagram of PEDOT:PSS/β-Ga₂O₃ heterojunction photodetector at 254 nm UV light illumination under zero bias.

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表 1 自供电型无机/有机日盲紫外探测器的性能参数比较

Table 1. Performance comparison of inorganic/organic self-powered solar blind UV detectors.

Structure	R/(mA·W^–1)	Light intensity/(μW·cm^–2)	Rise/decay time	EQE/%	Ref.
PEDOT:PSS/Ga₂O₃ microwire	3.25×10³	16	0.25 s/0.20 s	1591	This work
Ppy-PEDOT:PSS/GaN	1.1×10³	6.56×10³	0.25 s/0.28 s	4.0×10⁵	[23]
Ga₂O₃/spiro-OMeTAD	65	1	2.98 μs/28.49 μs	32	[24]
PEDOT:PSS/Ga₂O₃ (Bulk)	37	1.5×10^–3	9 ms/9 ms	18	[25]
PEDOT:PSS/Ga₂O₃/Si	29	12	60 ms/88 ms	15	[26]
ZnO/PVK/PEDOT/CNT	9.96	210	1.5 s/6 s	~0.6	[27]

DownLoad: CSV

[1]	Zhang C X, Xu C B, Wen G J, Lian Y F 2018 Opt. Eng. 57 053109 Google Scholar
[2]	Guo D K, Chen K, Wang S L, Wu F M, Liu A P, Li C R, Li P G, Tan C K, Tang W H 2020 Phys. Rev. Appl. 13 024051 Google Scholar
[3]	Wu C, He C R, Guo D K, Zhang F B, Li P G, Wang S L, Liu A P, Wu F M, Tang W H 2020 Mater. Today Phys. 12 100193 Google Scholar
[4]	Tak B R, Singh R 2021 ACS Appl. Electron. Mater. 3 2145 Google Scholar
[5]	Fan M M, Liu K W, Zhang Z Z, Li B H, Chen X, Zhao D X, Shan C X, Shen D Z 2014 Appl. Phys. Lett. 105 011117 Google Scholar
[6]	Yang W, Hullavarad S S, Nagaraj B, Takeuchi I, Sharma R P, Venkatesan T 2003 Appl. Phys. Lett. 82 3424 Google Scholar
[7]	Cicek E, McClintock R, Cho C Y, Rahnema B, Razeghi M 2013 Appl. Phys. Lett. 103 191108 Google Scholar
[8]	Rathkanthiwar S, Kalra A, Solanke S V, Mohta N, Muralidharan R, Raghavan S, Nath D N 2017 Appl. Phys. 121 164502 Google Scholar
[9]	Pearton S J, Yang J C, IV P H C, Ren F, Kim J, Tadjer M J, Mastro M A 2018 Appl. Phys. Rev. 5 011301 Google Scholar
[10]	Jubu P R, Yam F K 2020 Sens. Actuators A 312 112141 Google Scholar
[11]	刘玮, 冯秋菊, 宜子琪, 俞琛, 王硕, 王彦明, 隋雪, 梁红伟 2023 物理学报 72 198503 Google Scholar Liu W, Feng Q J, Yi Z Q, Yu C, Wang S, Wang Y M, Sui X, Liang H W 2023 Acta Phys. Sin. 72 198503 Google Scholar
[12]	Zhou Y M, Mei S J, Sun D W, Liu N, Shi W X, Feng J H, Mei F, Xu J X, Jiang Y, Cao X N 2019 Micromachines 10 459 Google Scholar
[13]	Feng Q, Du K, Li Y K, Shi P, Feng Q 2014 Chin. Phys. B 23 077303 Google Scholar
[14]	Liu Z Y, Khaled P, Li R J, Dong R H, Feng X L, Klaus M 2015 Adv. Mater. 27 669 Google Scholar
[15]	Son J, Kwon Y, Kim J, Kim J 2018 ECS J. Solid State Sci. Technol. 7 Q148 Google Scholar
[16]	Kwon Y, Lee G, Oh S, Kim J, Pearton S J, Ren F 2017 Appl. Phys. Lett. 110 131901 Google Scholar
[17]	Feng Q J, Dong Z J, Liu W, Liang S, Yi Z Q, Yu C, Xie J Z, Song Z 2022 Micro Nanostruct. 167 207255 Google Scholar
[18]	Xu C X, Shen L Y, Liu H, Pan X H, Ye Z Z 2021 J. Electron. Mater. 50 2043 Google Scholar
[19]	Liu Z, Wang X, Liu Y Y, Guo D K, Li S, Yan Z Y, Tan C K, Li W J, Li P G, Tang W H 2019 J. Mater. Chem. C 7 13920 Google Scholar
[20]	张茂林, 马万煜, 王磊, 刘增, 杨莉莉, 李山, 唐为华, 郭宇锋 2023 物理学报 72 160201 Google Scholar Zhang M L, Ma W Y, Wang L, Liu Z, Yang L L, Li S, Tang W H, Guo Y F 2023 Acta Phys. Sin. 72 160201 Google Scholar
[21]	Lin R C, Zheng W, Zhang D, Zhang Z J, Liao Q X, Yang L, Huang F 2018 ACS Appl. Mater. Interfaces 10 22419 Google Scholar
[22]	Qi S, Liu J H, Yue J Y, Ji X Q, Shen J Y, Yang Y T, Wang J J, Li S, Wu Z P, Tang W H 2023 J. Mater. Chem. C 11 8454 Google Scholar
[23]	Pasupuleti K S, Reddeppa M, Park B G, Peta K R, Oh J E, Kim S G, Kim M D 2020 ACS Appl. Mater. Interfaces 12 54181 Google Scholar
[24]	Yan Z Y, Li S, Liu Z, Zhi Y S, Dai J, Sun X Y, Sun S Y, Guo D Y, Wang X, Li P G, Wu Z P, Li L L, Tang W H 2020 J. Mater. Chem. C 8 4502 Google Scholar
[25]	Oshima T, Okuno T, Arai N, Suzuki N, Hino H, Fujita S 2009 Jpn. J. Appl. Phys. 48 011605 Google Scholar
[26]	Zhang D, Zheng W, Lin R C, Li Y Q, Huang F 2019 Adv. Funct. Mater. 29 1900935 Google Scholar
[27]	Dong Y H, Zou Y S, Song J Z, Zhu Z F, Li J H, Zeng H B 2016 Nano Energy 30 173 Google Scholar
[28]	Ouyang J Y 2013 Displays 34 423 Google Scholar
[29]	Yu P P, Hu K, Chen H Y, Zheng L X, Fang X S 2017 Adv. Funct. Mater. 27 1703166 Google Scholar

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Performance of UV photodetector of mechanical exfoliation prepared PEDOT:PSS/β-Ga₂O₃ microsheet heterojunction

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Corresponding author: Feng Qiu-Ju, qjfeng@dlut.edu.cn

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