Geant4 simulation of Hg1–xCdxTe infrared focal plane array image sensor space proton displacement damage and total ionizing dose effects

Yang Wei-Tao; Wu Yi-Chen; Xu Rui-Ming; Shi Guang; Ning Ti; Wang Bin; Liu Huan; Guo Zhong-Jie; Yu Song-Lin; Wu Long-Sheng

doi:10.7498/aps.73.20241246

Abstract

A large-format, high-resolution Hg_1–xCd_xTe infrared focal plane array (IRFPA) image sensor can be used in aerospace remote sensing and high-precision satellite imaging. The next generation of meteorological satellites in China will all adopt this type of image sensor. However, space high-energy protons can cause displacement damage effects in Hg_1–xCd_xTe IRFPA detectors and induce total ionizing dose (TID) effects in the pixel unit metal-oxide-semiconductor (MOS) transistors. This study focuses on a 55nm manufacturing process Hg_1–xCd_xTe IRFPA sensor widely used in image sensors by using a 2 pixel×2 pixel basic pixel unit model for large-format arrays and constructing a Geant4 simulation model. Simulations are conducted for different proton irradiation fluences, including 10¹⁰, 10¹¹, 10¹² and 10¹³ cm^–2. The results show the displacement damage under various fluences, including non-ionizing energy loss and displacement atom distribution. It is found that at a proton cumulative fluence of 10¹³ cm^–2, in addition to considering the displacement damage effect in the Hg_1–xCd_xTe IRFPA sensor, attention must also be paid to the TID effects on the MOS transistors in the pixel units. Additionally, this study provides a preliminary assessment of the damage conditions in the space environment based on simulation results. This study provides crucial data for supporting the space applications of future large-format Hg_1–xCd_xTe IRFPA image sensors.

Keywords:

Authors and contacts

1.
Faulty of Integrated Circuit, Xidian University, Xi’an 710071, China
2.
School of Automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, China
3.
School of Aerospace Science and Technology, Xidian University, Xi’an 710071, China
4.
The 11th Research Institute of China Electronics Technology Group Corporation, Beijing 100015, China

Corresponding author: Yang Wei-Tao, yangweitao01@xidian.edu.cn ; Wu Long-Sheng, lswu@xidian.edu.cn

Funds: Project supported by the Natural Science Basic Research Plan in the Shaanxi Province of China (Grant No. 2023-JC-QN-0015) and the Fundamental Research Funds for the Central Universities, China (Grant No. XJSJ23049).

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References

[1]	乔辉, 王妮丽, 杨晓阳, 郭强, 蒯文林, 徐国庆, 张冬冬, 李向阳 2023 上海航天(中英文) 40 99 Qiao H, Wang N L, Yang X Y, Guo Q, Kuai W L, Xu G Q, Zhang D D, Lli X Y 2023 Aerospace Shanghai (Chinese & English) 40 99
[2]	蔡毅 2022 红外与激光工程 51 20210988 Cai Y 2022 Infrared Laser Eng. 51 20210988
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[5]	胡伟达, 李庆, 陈效双, 陆卫 2019 物理学报 68 120701 Google Scholar Hu W D, Li Q, Chen X S, Lu W 2019 Acta Phys. Sin. 68 120701 Google Scholar
[6]	周立庆, 宁提, 张敏, 陈彦冠, 谢珩, 付志凯 2019 激光与红外 49 915 Zhou L Q, Ning T, Zhang M, Chen Y G, Xie H, Fu Z K 2019 Laser & Infrared 49 915
[7]	折伟林, 邢晓帅, 邢伟荣, 刘江高, 郝斐, 杨海燕, 王丹, 侯晓敏, 李振兴, 王成刚 2024 激光与红外 54 483 Google Scholar Zhe W L, Xing X S, Xing W R, Liu J G, Hao F, Yang H Y, Wang D, Hou X M, Li Z X, Wang C G 2024 Laser & Infrared 54 483 Google Scholar
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[10]	乔辉, 廖毅, 胡伟达, 邓屹, 袁永刚, 张勤耀, 李向阳, 龚海梅 2008 物理学报 57 7088 Google Scholar Qiao H, Liao Y, Hu W D, Deng Y, Yuan Y G, Zhang Q Y, Li X Y, Gong H M 2008 Acta Phys. Sin. 57 7088 Google Scholar
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[18]	李薇, 白雨蓉, 郭昊轩, 贺朝会, 李永宏 2022 物理学报 71 082401 Google Scholar Li W, Bai Y R, Guo H X, He C H, Li Y H 2022 Acta Phys. Sin. 71 082401 Google Scholar
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[25]	Robinson M, Torrens I 1974 Phys. Rev. B 9 5008 Google Scholar
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Cited By

图 1 碲镉汞红外焦平面CMOS图像传感器结构示意图^[20]

Figure 1. Schematic diagram of Hg_1–xCd_xTe infrared focal plane CMOS image sensor structure^[20].

DownLoad: Full-Size Img PowerPoint

图 2 单像素5T电路结构和2 pixel×2 pixel像素单元版图布局^[21]

Figure 2. Structure of a single pixel 5T circuit and a 2 pixel×2 pixel layout^[21].

DownLoad: Full-Size Img PowerPoint

图 3 碲镉汞红外焦平面阵列质子入射仿真模型简图

Figure 3. Simulation schematic of proton striking Hg_1–xCd_xTe infrared focal plane.

DownLoad: Full-Size Img PowerPoint

图 4 仿真中所用质子能谱^[23]

Figure 4. The proton spectrum used in the simulation^[23].

DownLoad: Full-Size Img PowerPoint

图 5 不同模拟注量下的PKA总数

Figure 5. Total PKA number under different fluences in simulation.

DownLoad: Full-Size Img PowerPoint

图 6 不同模拟注量下的PKA分布信息　(a) 10¹⁰ cm^–2; (b) 10¹¹ cm^–2; (c) 10¹² cm^–2; (d) 10¹³ cm^–2

Figure 6. PKA distribution at different simulation fluences: (a) 10¹⁰ cm^–2; (b) 10¹¹ cm^–2; (c) 10¹² cm^–2; (d) 10¹³ cm^–2.

DownLoad: Full-Size Img PowerPoint

图 7 不同注量质子仿真获得的NIEL信息　(a) 10¹⁰ cm^–2; (b) 10¹¹ cm^–2; (c) 10¹² cm^–2; (d) 10¹³ cm^–2

Figure 7. NIEL under different proton fluences: (a) 10¹⁰ cm^–2; (b) 10¹¹ cm^–2; (c) 10¹² cm^–2; (d) 10¹³ cm^–2.

DownLoad: Full-Size Img PowerPoint

图 8 注量为10¹³ cm^–2的质子入射碲镉汞阵列产生的不同NIEL

Figure 8. NIEL from different interactions at 10¹³ cm^–2.

DownLoad: Full-Size Img PowerPoint

图 9 模拟质子注量为10¹³ cm^–2时N_d在每个分段区间的分布信息

Figure 9. Distribution of N_d in each interval at 10¹³ cm^–2 proton fluence.

DownLoad: Full-Size Img PowerPoint

图 10 模拟质子注量为10¹³ cm^–2时整个碲镉汞阵列探测器中的N_d情况

Figure 10. N_d in the entire Hg_1–xCd_xTe array detector at 10¹³ cm^–2 simulated proton fluences.

DownLoad: Full-Size Img PowerPoint

图 11 模拟质子注量为10¹³ cm^–2的DPA分布信息

Figure 11. DPA in the Hg_1–xCd_xTe array detector at 10¹³ cm^–2 simulated proton fluences.

DownLoad: Full-Size Img PowerPoint

图 12 模拟质子注量为10¹³ cm^–2时整个碲镉汞阵列探测器中的DPA

Figure 12. The entire DPA in Hg_1–xCd_xTe array under 10¹³ cm^–2 proton fluences.

DownLoad: Full-Size Img PowerPoint

表 1 不同模拟注量下的PKA种类数目

Table 1. The PKA of different fluences in simulation.

仿真情况	入射质子注量/cm^–2	PKA种类数目
A	10¹⁰	27
B	10¹¹	36
C	10¹²	61
D	10¹³	159

DownLoad: CSV

表 2 模拟注量为10¹³ cm^–2的质子入射碲镉汞焦平面阵列产生的PKA

Table 2. The PKA detail under the proton fluences of 10¹³ cm^–2 in simulation.

元素	反冲核及占比		比重
Te	占比>1%	Te130(16.44%), Te128(15.70%), Te126(9.56%), Te125(3.63%), Te124(2.47%), Te122(1.36%)	49.71%
Te	占比<1%	Te123, Te120, Te127, Te121, Te129, Te119, Te118	49.71%
Hg	占比>1%	Hg202(7.87%), Hg200(6.20%), Hg199(4.55%), Hg201(3.50%), Hg198(2.72%), Hg204(1.28%)	26.69%
Hg	占比<1%	Hg196, Hg197, Hg194, Hg192, Hg193, Hg191, Hg195, Hg190, Hg189	26.69%
Cd	占比>1%	Cd114(6.42%), Cd112(5.73%), Cd111(3.08%), Cd110(3.04%), Cd113(2.86%), Cd116(1.67%)	23.59%
Cd	占比<1%	Cd106, Cd108, Cd109, Cd104, Cd107, Cd105, Cd115, Cd124	23.59%
其他	He4, I126, I124, I123, I125, I128, In112, I127, I129, In111, Sb121, I122, I130, In113, Sb117, Sb119, Sb123, In108, Sb120, Sb122, Ag109, Au193, etc		0.01%

DownLoad: CSV

表 3 不同仿真情况下的像素单元MOS管累积电离总剂量情况

Table 3. Total ionizing dose in the MOS of pixel under different simulation fluences.

仿真情况	模拟注量/cm^–2	像素单元MOS管电离总剂量/rad
A	10¹⁰	0
B	10¹¹	0
C	10¹²	0
D	10¹³	5301.95

DownLoad: CSV

[1]	乔辉, 王妮丽, 杨晓阳, 郭强, 蒯文林, 徐国庆, 张冬冬, 李向阳 2023 上海航天(中英文) 40 99 Qiao H, Wang N L, Yang X Y, Guo Q, Kuai W L, Xu G Q, Zhang D D, Lli X Y 2023 Aerospace Shanghai (Chinese & English) 40 99
[2]	蔡毅 2022 红外与激光工程 51 20210988 Cai Y 2022 Infrared Laser Eng. 51 20210988
[3]	Marion B R 2009 Proc. of SPIE 7298 72982S Google Scholar
[4]	乔辉, 王妮丽, 贾嘉, 兰添翼, 许金通, 杨晓阳, 张燕, 李向阳 2023 激光与红外 53 1534 Google Scholar Qiao H, Wang N L, Jia J, Lan T Y, Xu J T, Yang X Y, Zhang Y, Li X Y 2023 Laser & Infrared 53 1534 Google Scholar
[5]	胡伟达, 李庆, 陈效双, 陆卫 2019 物理学报 68 120701 Google Scholar Hu W D, Li Q, Chen X S, Lu W 2019 Acta Phys. Sin. 68 120701 Google Scholar
[6]	周立庆, 宁提, 张敏, 陈彦冠, 谢珩, 付志凯 2019 激光与红外 49 915 Zhou L Q, Ning T, Zhang M, Chen Y G, Xie H, Fu Z K 2019 Laser & Infrared 49 915
[7]	折伟林, 邢晓帅, 邢伟荣, 刘江高, 郝斐, 杨海燕, 王丹, 侯晓敏, 李振兴, 王成刚 2024 激光与红外 54 483 Google Scholar Zhe W L, Xing X S, Xing W R, Liu J G, Hao F, Yang H Y, Wang D, Hou X M, Li Z X, Wang C G 2024 Laser & Infrared 54 483 Google Scholar
[8]	王忆锋, 田萦 2011 红外 32 1 Google Scholar Wang Y F, Tian Y 2011 Infrared 32 1 Google Scholar
[9]	江天, 程湘爱, 郑鑫, 许中杰, 江厚满, 陆启生 2012 物理学报 61 137302 Google Scholar Jiang T, Cheng X A, Zheng X, Xu Z J, Jiang H M, Lu Q S 2012 Acta Phys. Sin. 61 137302 Google Scholar
[10]	乔辉, 廖毅, 胡伟达, 邓屹, 袁永刚, 张勤耀, 李向阳, 龚海梅 2008 物理学报 57 7088 Google Scholar Qiao H, Liao Y, Hu W D, Deng Y, Yuan Y G, Zhang Q Y, Li X Y, Gong H M 2008 Acta Phys. Sin. 57 7088 Google Scholar
[11]	Sun X, Abshire J B, Lauenstein J M, et al. 2021 IEEE Trans. Nucl. Sci. 68 27 Google Scholar
[12]	Dinand S, Goiffon V, Lambert D, Rizzolo S, Baier N, Borniol E D, Saint-Pé O, Durnez C, Gravrand O 2023 IEEE Trans. Nucl. Sci. 70 1234
[13]	唐宁, 王祖军, 晏石兴, 李传洲, 蒋镕羽 2024 光学学报 44 0928003 Google Scholar Tang N, Wang Z J, Yan S X, Li C Z, Jiang R Y 2024 Acta Opt. Sin. 44 0928003 Google Scholar
[14]	王祖军, 赖善坤, 杨勰, 贾同轩, 黄港, 聂栩 2022 半导体光电 43 839 Wang Z J, Lai S K, Yang X, Jia T X, Huang G, Nie X 2022 Semicond. Optoelectron. 43 839
[15]	谢飞, 臧航, 刘方, 何欢, 廖文龙, 黄煜 2020 物理学报 69 192401 Google Scholar Xie F, Zang H, Liu F, He H, Liao W L, Huang Y 2020 Acta Phys. Sin. 69 192401 Google Scholar
[16]	白雨蓉, 李永宏, 刘方, 廖文龙, 何欢, 杨卫涛, 贺朝会 2021 物理学报 70 172401 Google Scholar Bai Y R, Li Y H, Liu F, Liao W L, He H, Yang W T, He C H 2021 Acta Phys. Sin. 70 172401 Google Scholar
[17]	魏雯静, 高旭东, 吕亮亮, 许楠楠, 李公平 2022 物理学报 71 226102 Google Scholar Wei W J, Gao X D, Lü L L, Xu N N, Li G P 2022 Acta Phys. Sin. 71 226102 Google Scholar
[18]	李薇, 白雨蓉, 郭昊轩, 贺朝会, 李永宏 2022 物理学报 71 082401 Google Scholar Li W, Bai Y R, Guo H X, He C H, Li Y H 2022 Acta Phys. Sin. 71 082401 Google Scholar
[19]	何欢, 白雨蓉, 田赏, 刘方, 臧航柳文波, 李培, 贺朝会 2024 物理学报 73 052402 Google Scholar He H, Bai Y R, Tian S, Liu F, Zang H, Liu W B, Li P, He C H 2024 Acta Phys. Sin. 73 052402 Google Scholar
[20]	赵俊, 王晓璇, 李雄军, 张应旭, 秦强, 宋林伟, 袁绶章, 孔金丞, 姬荣斌 2023 中国科学: 技术科学 53 1419 Google Scholar Zhao J, Wang X X, Li X J, Zhang Y X, Qin Q, Song L W, Yuan S Z, Kong J C, Ji R B 2023 Sci. Sin. -Technol. 53 1419 Google Scholar
[21]	Xu R M, Guo Z J, Liu S Y, Yu N M 2024 Chin. J. Electron. 33 415 Google Scholar
[22]	张林, 马林东, 杜林, 李艳波, 徐先峰, 黄鑫蓉 2023 物理学报 72 138501 Google Scholar Zhang L, Ma L D, Du L, Li Y B, Xu X F, Huang X R 2023 Acta Phys. Sin. 72 138501 Google Scholar
[23]	Tylka A J, Adams J H, Boberg P R, et al. 1997 IEEE Trans. Nucl. Sci. 44 2150 Google Scholar
[24]	Akkerman A, Barak J 2007 Nucl. Instrum. Methods Phys. Res. , Sect. B 260 529 Google Scholar
[25]	Robinson M, Torrens I 1974 Phys. Rev. B 9 5008 Google Scholar
[26]	Konobeyev A Y, Fischer U, Korovin Y A, Simakov S P 2017 Nucl. Energy Technol. 3 169 Google Scholar

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[20]	Huang Yang-Cheng, Liu Da-Fu, Liang Jin-Sui, Gong Hai-Mei. Low frequency noise study on short wavelength HgCdTe photodiodes. Acta Physica Sinica, 2005, 54(5): 2261-2266. doi: 10.7498/aps.54.2261

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Vol. 73, Issue 23 - 2024-12-05

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