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A large-format, high-resolution Hg1-xCdxTe infrared focal plane array (IRFPA) image sensor can be used in aerospace remote sensing and high-precision satellite imaging. The next generation of meteorological satellites in China will fully adopt this type of image sensor. However, space high-energy protons can cause displacement damage effects in Hg1-xCdxTe IRFPA detectors and induce total ionizing dose (TID) effects in the pixel unit metal-oxide-semiconductor (MOS) transistors. This paper focuses on a 55nm manufacturing process Hg1-xCdxTe IRFPA sensor widely used in image sensors, using a 2×2 basic pixel unit model for large-format arrays and constructing a Geant4 simulation model. Simulations were conducted for different proton irradiation fluences, including 1010, 1011, 1012 and 1013 cm-2. The results show the displacement damage under various fluences, including non-ionizing energy loss and displacement atom distribution and others. It was found that, at a proton cumulative fluence of 1013 cm-2, in addition to considering the displacement damage effect in the Hg1-xCdxTe IRFPA sensor, attention must also be paid to the TID effects on the MOS transistors in the pixel units. Additionally, the study provides a preliminary assessment of the damage conditions in the space environment based on simulation results. This research provides crucial data support for the space applications of future large-format Hg1-xCdxTe IRFPA image sensors.
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Keywords:
- Hg1-xCdxTe /
- infrared focal plane /
- proton /
- Geant4 /
- displacement damage /
- total ionizing dose
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