An analytical model of mobility in nano-scaled n-MOSFETs
Acta Physica Sinica
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Acta Phys. Sin.  2006, Vol. 55 Issue (11): 6090-6094    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
An analytical model of mobility in nano-scaled n-MOSFETs
Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan
安徽大学电子科学与技术学院,合肥 230039
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