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Positron annihilation spectroscopy(PAS)and photoluminescence (PL) have been adopted to study defects in proton-irradiatied Zn-doped GaSb. A monovacancy VGa having a lifetime of 293 ps was observed in the non-irradiated sampls and a divacancy VGaVSb with a tifetime of 333 ps was identified in the proton-irradiated samples when the fluence reached 3×1015 cm-2.The PL results reveal that the acceptor Zn is not related with proton irradiation-induced defects, which act as non-radiation recombination centers in the samples. The acceptor level of Zn in GaSb has been calculated from the PL spectra. After proton irradiation, interstitial monatomic hydrogen in a negative charge state (Hi-) in GaSb has been found, which acts as a shallow-acceptor. Annealing experiments indicated that the as-grown and proton-irradiated samples have different annealing behaviors, the reason for which was attributed to the existence of monatomic hydrogen interstitials in the proton-irradiated samples.
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Keywords:
- defect /
- GaSb /
- positron annihilation /
- photoluminescence
[1] Jiang Z W, Wang W X, Gao H C, Li H, He T, Yang C L, Chen H, Zhou J M 2009 Acta Phys. Sin. 58 471 (in Chinese) [蒋中伟、 王文新、高汉超、李 辉、何 涛、杨成良、陈 弘、周均铭2009 物理学报 471] 〖2] Dutta P S, Bhat H L 1997 Appl. Phys. Rev. 81 5821
[2] Phys. 59 2895
[3] Sestakova V, Stepanek B 1995 J. Cryst. Growth 146 87
[4] Chen J F, Cho A Y 1991 J. Appl. Phys. 70 277
[5] Hjelt K, Tuomi T 1997 J. Cryst. Growth 170 794
[6] Krause-Rehberg R, Leipner H S 1999 Positron Annihilation in Semiconductor (Vol. 127) (Berlin: Springer-Verlag)
[7] Puska M J, Nieminen R M 1994 Rev. Mod. Phys. 66 841
[8] Hu W G, Wang Z, Su B F, Dai Y Q, Wang S J, Zhao Y W 2004 Phys. Lett. A 332 286
[9] Effer D, Effer P J 1964 J. Phys. Chem. Solids 25 451
[10] van de Meulen Y J 1967 J. Phys. Chem. Solids 28 25
[11] van Maaren M H 1966 J. Phys. Chem. Solids 27 472
[12] Puska M J, Mkinen S, Manninen M, Nieminen R M 1989 Phys. Rev. B 39 7666
[13] Ling C C, Fung S, Beling C D 2001 Phys. Rev. B 64 075201
[14] Ma S K, Lui M K, Ling C C, Fung S, Beling C D, Li K F, Cheah K W, Gong M, Hang H S, Weng H M 2004 J. Phys. :Condens. Matter 16 6205
[15] Hautojrvi P J 1995 Mater. Sci. Forum 175-178 47
[16] Lee M, Nicholas D J, Singer K E, Hamilton B 1986 J. Appl.
[17] Wu M C, Chen C C 1992 J. Appl. Phys. 72 4275
[18] Peles A, Janotti A, van de Walle C G 2008 Phys. Rev. B 78 035204
[19] Shaw D 2003 Semicond. Sci. Technol. 18 627
[20] Hakala M, Puska M J, Nieminen R M 2002 J. Appl. Phys. 91 4988
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[1] Jiang Z W, Wang W X, Gao H C, Li H, He T, Yang C L, Chen H, Zhou J M 2009 Acta Phys. Sin. 58 471 (in Chinese) [蒋中伟、 王文新、高汉超、李 辉、何 涛、杨成良、陈 弘、周均铭2009 物理学报 471] 〖2] Dutta P S, Bhat H L 1997 Appl. Phys. Rev. 81 5821
[2] Phys. 59 2895
[3] Sestakova V, Stepanek B 1995 J. Cryst. Growth 146 87
[4] Chen J F, Cho A Y 1991 J. Appl. Phys. 70 277
[5] Hjelt K, Tuomi T 1997 J. Cryst. Growth 170 794
[6] Krause-Rehberg R, Leipner H S 1999 Positron Annihilation in Semiconductor (Vol. 127) (Berlin: Springer-Verlag)
[7] Puska M J, Nieminen R M 1994 Rev. Mod. Phys. 66 841
[8] Hu W G, Wang Z, Su B F, Dai Y Q, Wang S J, Zhao Y W 2004 Phys. Lett. A 332 286
[9] Effer D, Effer P J 1964 J. Phys. Chem. Solids 25 451
[10] van de Meulen Y J 1967 J. Phys. Chem. Solids 28 25
[11] van Maaren M H 1966 J. Phys. Chem. Solids 27 472
[12] Puska M J, Mkinen S, Manninen M, Nieminen R M 1989 Phys. Rev. B 39 7666
[13] Ling C C, Fung S, Beling C D 2001 Phys. Rev. B 64 075201
[14] Ma S K, Lui M K, Ling C C, Fung S, Beling C D, Li K F, Cheah K W, Gong M, Hang H S, Weng H M 2004 J. Phys. :Condens. Matter 16 6205
[15] Hautojrvi P J 1995 Mater. Sci. Forum 175-178 47
[16] Lee M, Nicholas D J, Singer K E, Hamilton B 1986 J. Appl.
[17] Wu M C, Chen C C 1992 J. Appl. Phys. 72 4275
[18] Peles A, Janotti A, van de Walle C G 2008 Phys. Rev. B 78 035204
[19] Shaw D 2003 Semicond. Sci. Technol. 18 627
[20] Hakala M, Puska M J, Nieminen R M 2002 J. Appl. Phys. 91 4988
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