RHEED INTENSITY OSCILLATIONS IN THE PROCESS OF MOLECULAR BEAM EPITAXY GROWTH OF Ge AND Si ON Si SUBSTRATES
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin.  1990, Vol. 39 Issue (2): 237-244    
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
RHEED INTENSITY OSCILLATIONS IN THE PROCESS OF MOLECULAR BEAM EPITAXY GROWTH OF Ge AND Si ON Si SUBSTRATES
CHEN KE-MING, JIN GAO-LONG, SHENG CHI, ZHOU GAO-LIANG, JIANO WEI-DONG, ZHANG XIANG-JIU, YU MING-REN
复旦大学表面物理实验室,上海,200433
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn