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PHASE-LOCKED EPITAXY OF Ge/Si SUPERLATTICES BY USING RHEED INTENSITY OSCILLATIONS

CHEN KE-MING JIN GAO-LONG SHENG CHI ZHOU GUO-LIANG JIANG WEI-DONG ZHANG XIANG-JIU YU MING-REN

PHASE-LOCKED EPITAXY OF Ge/Si SUPERLATTICES BY USING RHEED INTENSITY OSCILLATIONS

CHEN KE-MING, JIN GAO-LONG, SHENG CHI, ZHOU GUO-LIANG, JIANG WEI-DONG, ZHANG XIANG-JIU, YU MING-REN
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  • Received Date:  08 May 1989
  • Published Online:  22 June 2005

PHASE-LOCKED EPITAXY OF Ge/Si SUPERLATTICES BY USING RHEED INTENSITY OSCILLATIONS

  • 1. 复旦大学表面物理实验室,上海,200433

Abstract: Reflection High Energy Electron Diffraction (RHEED) intensity oscillations during the growth of alternating Ge and Si layers were observed, and the growth behavior during molecular beam epitaxy of Ge/Si ultra-thin multi-layered structures on Si(l00) and Si(lll) substrates has been studied. By using RHEED intensity oscillation, we have fabricated the Ge(2ML)/Si(2ML) and Ge(4ML)/Si(4ML) ultra-thin superlattices by phase-locking method.

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