High-quality Ge<sub>1-<em>x</em></sub>Sn<sub><em>x</em></sub> alloys grown on Ge(001) substrates by molecular beam epitaxy
Acta Physica Sinica
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Acta Phys. Sin  2013, Vol. 62 Issue (5): 058101     doi:10.7498/aps.62.058101
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High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy
Su Shao-Jian1, Zhang Dong-Liang2, Zhang Guang-Ze2, Xue Chun-Lai2, Cheng Bu-Wen2, Wang Qi-Ming2
1. College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China;
2. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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