Liu Hong-Xia; Zheng Xue-Feng; Hao Yao

doi:10.7498/aps.51.163

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Abstract
Ｔｈｉｓｐａｐｅｒｐｒｅｓｅｎｔｓａｎｅｘｐｅｒｉｍｅｎｔａｌｍｅｔｈｏｄｆｏｒｍｅａｓｕｒｉｎｇｔｈｅｄｅｎｓｉｔｙｏｆｔｒａｐｐｉｎｇｃｈａｒｇｅｓ.Ｔｈｉｓｍｅｔｈｏｄｉｓｂａｓｅｄｏｎｔｈｅｄｙｎａｍｉｃｅｑｕｉｌｉｂｒｉｕｍｅｑｕａｔｉｏｎｆｏｒｔｈｅｐｒｏｃｅｓｓｏｆｔｒａｐｐｅｄｃｈａｒｇｅｓ.ＷｅｃａｎｏｂｔａｉｎｔｈｅｄｅｎｓｉｔｙａｎｄｔｈｅｌｏｃａｔｉｏｎｏｆｔｒａｐｐｉｎｇｃｈａｒｇｅｓｂｙｍｅａｓｕｒｉｎｇｔｈｅｈｉｇｈｆｒｅｑｕｅｎｃｙＣＶｃｕｒｖｅｏｆＭＯＳｃａｐａｃｉｔａｎｃｅｂｅｆｏｒｅａｎｄａｆｔｅｒｓｔｒｅｓｓ,ａｎｄｔｈｅｃｈａｎｇｅｏｆｇａｔｅｖｏｌｔａｇｅｕｎｄｅｒｃｏｎｓｔａｎｔｃｕｒｒｅｎｔｓｔｒｅｓｓ.Ｔｈｅａｎａｌｙｔｉｃａｌｅｘｐｒｅｓｓｉｏｎｏｆｔｈｅｄｅｎｓｉｔｙｏｆｔｒａｐｐｉｎｇｃｈａｒｇｅｓｉｓｐｒｏｐｏｓｅｄ .Ｔｈｅｍｅｔｈｏｄａｎｄｔｈｅｒｅｓｕｌｔｓｏｆｐａｒａｍｅｔｅｒｓｅｘｔｒａｃｔｉｏｎａｒｅａｌｓｏｐｒｅｓｅｎｔｅｄ .Ｅｘｐｅｒｉｍｅｎｔａｌｒｅｓｕｌｔｓｓｈｏｗｔｈａｔｔｈｉｓｍｅｔｈｏｄｉｓｃｏｎｖｅｎｉｅｎｔａｎｄｐｒｅｃｉｓｅ .

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Liu Hong-Xia,

Zheng Xue-Feng,

Hao Yao

1.
西安电子科技大学微电子研究所,西安710071
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Vol. 51, Issue 1 - 2002-01-05

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