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Effects of interfacial Ru, Pd, Ag, and Au insertion layers on the anisotropic magnetoresistance in Ta/NiFe/Ta trilayers

Xu Yong Cai Jian-Wang

Effects of interfacial Ru, Pd, Ag, and Au insertion layers on the anisotropic magnetoresistance in Ta/NiFe/Ta trilayers

Xu Yong, Cai Jian-Wang
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  • Ta/NiFe/Ta trilayers are commonly used in various commercial sensors based on anisotropic magnetoresistive(AMR) effect. Technologically it is desirable to reduce NiFe film thickness to diminish the demagnetization effect for the smaller and smaller devices. However, the AMR ratio of thin NiFe film decreases rapidly with film thickness decreasing when the NiFe film is thinner than 20 nm. Our previous work revealed that the AMR ratio and the thermal stability of Ta/NiFe/Ta trilayers can be significantly improved through interfacial Pt addition due to the enhanced interfacial spin-orbit scattering and the suppressed magnetic dead layers. In this paper, 4d and 5d elements including Ru, Pd, Ag and Au, are also introduced at the interfaces of Ta/NiFe/Ta films fabricated by DC magnetron sputtering. It is found that the insertion of interfacial Pd layers leads to an appreciable AMR enhancement in the as-sputtered state and after annealing. Insertion layers of Ag and Au with small surface energy and relatively low melting point suffer from thermal interdiffusion and seriously deteriorate the AMR of the annealed films, whereas Ru insertion layers exhibit improved thermal stability. The present results indicate that the AMR of Ta/NiFe/Ta films can be notably affected by the extremely thin interfacial insertion layers due to the changed interfacial spin-orbit scattering, magnetic dead layer and atomic interdiffusion.
    • Funds:
    [1]

    McGuire T R, Potter R I 1975 IEEE Trans. Magn. 11 1018

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    Wu D, Wei P, Johnston-Halperin E, Awschalom D D, Shi J 2008 Phys. Rev. B 77 125320

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    Rushforth A W, Vborn K, King C S, Edmonds K W, Campion R P, Foxon C T, Wunderlich J, Irvine A C, Vaek P, Novk V, Olejnk K, Sinova J, Jungwirth T, Gallagher B L 2007 Phys. Rev. Lett. 99 147207

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    Li P, Jiang E Y, Bai H L 2010 Appl. Phys. Lett. 96 092502

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    Ramos R, Arora S K, Shvets I V 2008 Phys. Rev. B 78 214402

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    Bibes M, Laukhin V, Valencia S, Martinez B, Fontcuberta J, Gorbenko O Y, Kaul A R, Martinez J L 2005 J. Phys.: Condens. Matter 17 2733

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    Bibes M, Martnez B, Fontcuberta J, Trtik V, Ferrater C, Snchez F, Varela M, Hiergeist R, Steenbeck K 2000 J. Magn. Magn. Mater. 211 206

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    Tsunoda M, Komasaki Y, Kokado S, Isogami S, Chen C C, Takahashi M 2009 Appl. Phys. Exp. 2 083001

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    Yau J B, Hong X, Posadas A, Ahn C H, Gao W, Altman E, Bason Y, Klein L, Sidorov M, Krivokapic Z 2007 J. Appl. Phys. 102 103901

    [18]

    Li R W, Wang H, Wang X, Yu X Z, Matsui Y, Cheng Z H, Shen B G, Plummere E W, Zhang J 2008 Proc. Natl. Acad. Sci. U.S.A. 106 14224

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    [20]
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    Egilmez M, Patterson R, Chow K H, Jung J 2007 Appl. Phys. Lett. 90 232506

    [22]
    [23]

    Jiang H W, Wang A L, Zheng W 2005 Acta Phys. Sin. 54 2338 (in Chinese) [姜宏伟、王艾玲、郑 鹉 2005 物理学报 54 2338]

    [24]
    [25]

    Miller B H, Stojkovi ć B P, Dahlberg E D 1999 Phys. Lett. A 256 294

    [26]
    [27]

    Ingvarsson S, Xiao G, Parkin S S P, Gallagher W J 2002 J. Magn. Magn. Mater. 251 202

    [28]
    [29]

    Lin T, Mauri D, York B, Rice P M 2004 Appl. Phys. Lett. 84 386

    [30]
    [31]

    Kowalewski M, Butler W H, Moghadam N, Stock G M, Schulthess T C, Song K J, Thompson J R, Arrott A S, Zhu T, Drewes J, Katti R R, McClure M T, Escorcia O 2000 J. Appl. Phys. 87 5732

    [32]
    [33]

    Miyazaki T, Ajima T 1989 J. Magn. Magn. Mater. 81 91

    [34]

    Liu Y F, Cai J W, Sun L 2010 Appl. Phys. Lett. 96 092509

    [35]
    [36]

    Kitada M, Yamamoto H, Tsuchiya H 1984 Thin Solid Films 122 173

    [37]
    [38]

    Mezey L Z, Giber J 1982 Jpn. J. Appl. Phys. 21 1569

    [39]
    [40]
    [41]

    Egelhoff W F, Chen P J, Powell C J, Stiles M D, McMichael R D, Lin C L, Sivertsen J M, Judy J H, Takano K, Berkowitz A E 1996 J. Appl. Phys. 80 5183

    [42]
    [43]

    Kitakami O, Shimada Y, Oikawa K, Daimon H, Fukamichi K 2001 Appl. Phys. Lett. 78 1104

    [44]
    [45]

    Nagura H, Saito K, Takanashi K, Fujimori H 2000 J. Magn. Magn. Mater. 212 53

    [46]

    Yu G H, Zhao H C, Li M H, Zhu F W, Lai W Y 2002 Appl. Phys. Lett. 80 455

    [47]
    [48]

    Moghadam N Y, Stocks G M 2005 Phys. Rev. B 71 134421

    [49]
  • [1]

    McGuire T R, Potter R I 1975 IEEE Trans. Magn. 11 1018

    [2]

    Wu D, Wei P, Johnston-Halperin E, Awschalom D D, Shi J 2008 Phys. Rev. B 77 125320

    [3]
    [4]
    [5]

    Rushforth A W, Vborn K, King C S, Edmonds K W, Campion R P, Foxon C T, Wunderlich J, Irvine A C, Vaek P, Novk V, Olejnk K, Sinova J, Jungwirth T, Gallagher B L 2007 Phys. Rev. Lett. 99 147207

    [6]

    Li P, Jiang E Y, Bai H L 2010 Appl. Phys. Lett. 96 092502

    [7]
    [8]
    [9]

    Ramos R, Arora S K, Shvets I V 2008 Phys. Rev. B 78 214402

    [10]

    Bibes M, Laukhin V, Valencia S, Martinez B, Fontcuberta J, Gorbenko O Y, Kaul A R, Martinez J L 2005 J. Phys.: Condens. Matter 17 2733

    [11]
    [12]

    Bibes M, Martnez B, Fontcuberta J, Trtik V, Ferrater C, Snchez F, Varela M, Hiergeist R, Steenbeck K 2000 J. Magn. Magn. Mater. 211 206

    [13]
    [14]

    Tsunoda M, Komasaki Y, Kokado S, Isogami S, Chen C C, Takahashi M 2009 Appl. Phys. Exp. 2 083001

    [15]
    [16]
    [17]

    Yau J B, Hong X, Posadas A, Ahn C H, Gao W, Altman E, Bason Y, Klein L, Sidorov M, Krivokapic Z 2007 J. Appl. Phys. 102 103901

    [18]

    Li R W, Wang H, Wang X, Yu X Z, Matsui Y, Cheng Z H, Shen B G, Plummere E W, Zhang J 2008 Proc. Natl. Acad. Sci. U.S.A. 106 14224

    [19]
    [20]
    [21]

    Egilmez M, Patterson R, Chow K H, Jung J 2007 Appl. Phys. Lett. 90 232506

    [22]
    [23]

    Jiang H W, Wang A L, Zheng W 2005 Acta Phys. Sin. 54 2338 (in Chinese) [姜宏伟、王艾玲、郑 鹉 2005 物理学报 54 2338]

    [24]
    [25]

    Miller B H, Stojkovi ć B P, Dahlberg E D 1999 Phys. Lett. A 256 294

    [26]
    [27]

    Ingvarsson S, Xiao G, Parkin S S P, Gallagher W J 2002 J. Magn. Magn. Mater. 251 202

    [28]
    [29]

    Lin T, Mauri D, York B, Rice P M 2004 Appl. Phys. Lett. 84 386

    [30]
    [31]

    Kowalewski M, Butler W H, Moghadam N, Stock G M, Schulthess T C, Song K J, Thompson J R, Arrott A S, Zhu T, Drewes J, Katti R R, McClure M T, Escorcia O 2000 J. Appl. Phys. 87 5732

    [32]
    [33]

    Miyazaki T, Ajima T 1989 J. Magn. Magn. Mater. 81 91

    [34]

    Liu Y F, Cai J W, Sun L 2010 Appl. Phys. Lett. 96 092509

    [35]
    [36]

    Kitada M, Yamamoto H, Tsuchiya H 1984 Thin Solid Films 122 173

    [37]
    [38]

    Mezey L Z, Giber J 1982 Jpn. J. Appl. Phys. 21 1569

    [39]
    [40]
    [41]

    Egelhoff W F, Chen P J, Powell C J, Stiles M D, McMichael R D, Lin C L, Sivertsen J M, Judy J H, Takano K, Berkowitz A E 1996 J. Appl. Phys. 80 5183

    [42]
    [43]

    Kitakami O, Shimada Y, Oikawa K, Daimon H, Fukamichi K 2001 Appl. Phys. Lett. 78 1104

    [44]
    [45]

    Nagura H, Saito K, Takanashi K, Fujimori H 2000 J. Magn. Magn. Mater. 212 53

    [46]

    Yu G H, Zhao H C, Li M H, Zhu F W, Lai W Y 2002 Appl. Phys. Lett. 80 455

    [47]
    [48]

    Moghadam N Y, Stocks G M 2005 Phys. Rev. B 71 134421

    [49]
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    [2] Jiang Hong-Wei, Wang Ai-Ling, Zheng Wu. Anisotropic magnetoresistance effect in spin valve multilayers. Acta Physica Sinica, 2005, 54(5): 2338-2341. doi: 10.7498/aps.54.2338
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    [7] Liu En-Hua, Chen Zhao, Wen Xiao-Li, Chen Chang-Le. Influence of paramagnetic La2/3Sr1/3MnO3 layer on the multiferroic property of Bi0.8Ba0.2FeO3 film. Acta Physica Sinica, 2016, 65(11): 117701. doi: 10.7498/aps.65.117701
    [8] Zhang Long-Yan,  Xu Jin-Liang,  Lei Jun-Peng. Molecular dynamics study of bubble nucleation on a nanoscale. Acta Physica Sinica, 2018, 67(23): 234702. doi: 10.7498/aps.67.20180993
    [9] Ding Jian-Wen, Yan Xiao-Hong, Tang Na-Si, Miao Zhi-Wu. Effect of distortion on hopping conductivity:ThueMorse nanostructured model. Acta Physica Sinica, 2003, 52(5): 1213-1217. doi: 10.7498/aps.52.1213
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  • Received Date:  25 April 2011
  • Accepted Date:  04 May 2011
  • Published Online:  15 November 2011

Effects of interfacial Ru, Pd, Ag, and Au insertion layers on the anisotropic magnetoresistance in Ta/NiFe/Ta trilayers

  • 1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Abstract: Ta/NiFe/Ta trilayers are commonly used in various commercial sensors based on anisotropic magnetoresistive(AMR) effect. Technologically it is desirable to reduce NiFe film thickness to diminish the demagnetization effect for the smaller and smaller devices. However, the AMR ratio of thin NiFe film decreases rapidly with film thickness decreasing when the NiFe film is thinner than 20 nm. Our previous work revealed that the AMR ratio and the thermal stability of Ta/NiFe/Ta trilayers can be significantly improved through interfacial Pt addition due to the enhanced interfacial spin-orbit scattering and the suppressed magnetic dead layers. In this paper, 4d and 5d elements including Ru, Pd, Ag and Au, are also introduced at the interfaces of Ta/NiFe/Ta films fabricated by DC magnetron sputtering. It is found that the insertion of interfacial Pd layers leads to an appreciable AMR enhancement in the as-sputtered state and after annealing. Insertion layers of Ag and Au with small surface energy and relatively low melting point suffer from thermal interdiffusion and seriously deteriorate the AMR of the annealed films, whereas Ru insertion layers exhibit improved thermal stability. The present results indicate that the AMR of Ta/NiFe/Ta films can be notably affected by the extremely thin interfacial insertion layers due to the changed interfacial spin-orbit scattering, magnetic dead layer and atomic interdiffusion.

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