Efficient spin injection in Fe<sub>3</sub>GeTe<sub>2</sub>/h-BN/graphene heterostructure

Yang Wei; Han Jiang-Chao; Cao Yuan; Lin Xiao-Yang; Zhao Wei-Sheng

doi:10.7498/aps.70.20202136

Abstract

Recently, the discovery of intrinsic two-dimensional (2D) ferromagnetism has accelerated the application of spintronics in ultra-low power electronic device. Particularly, the Curie temperature of Fe₃GeTe₂ can be improved to room-temperature in several ways, such as interfacial exchange coupling and ionic liquid gating, which makes Fe₃GeTe₂ desirable for the practical application. In this work, we investigate the transport properties of Fe₃GeTe₂/graphene heterostructures with or without h-BN layers by utilizing the density functional theory combined with nonequilibrium Green’s function method. The results show that due to electronic orbital hybridization, the spin can be effectively injected into graphene with ± 0.1 V bias at the transparent contact interface of Fe₃GeTe₂/graphene. What is more, the efficient spin tunneling injection can be achieved in a wider bias range [–0.3 V, 0.3 V] by adding h-BN as a tunneling layer, where the spin filter effect that is induced by mismatched distribution of spin-dependent electronic states in the Brillouin zone, leads a spin polarizability to approach 100%. These results are helpful in the applications of 2D all-spin logic and the development of ultra-low power spintronic devices.

Keywords:

Authors and contacts

School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China

Corresponding author: Lin Xiao-Yang, XYLin@buaa.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51602013, 12004021), the Young Elite Scientists Sponsorship Program by China Association for Science and Technology (CAST) (Grant No. 2018QNRC001), the International Collaboration 111 Project, China (Grant No. B16001), the Fundamental Research Funds for the Central Universities of China, and the Beijing Advanced Innovation Centre for Big Data and Brain Computing (BDBC)

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References

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Cited By

图 1 Fe₃GeTe₂/氮化硼₍₃₎/石墨烯器件的(a)侧视图和(b)俯视图, 其中器件的电极区域由虚线框标出; 在器件的中心透射区Fe₃GeTe₂和石墨烯之间有0层或者3层氮化硼, 这里所示的模型是具有3层氮化硼的器件结构

Figure 1. (a) The side view and (b) top view of Fe₃GeTe₂/h-BN₍₃₎/graphene devices. The electrode regions of the device are indicated by a dashed frame. The number of h-BN layers between graphene and Fe₃GeTe₂ in the center region is 0 or 3. The model shown here is the device structure with 3 layers h-BN.

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图 2 (a) 透明接触器件的I-V曲线; (b) 透明接触器件石墨烯沟道中的自旋极化率; (c) 隧穿接触器件的I-V曲线; (d) 隧穿接触器件石墨烯沟道中的自旋极化率

Figure 2. (a) I-V curves of the transparent contact device; (b) spin polarization in graphene channel of the transparent contact device; (c) I-V curves of the tunneling contact device; (d) spin polarization in graphene channel of the tunneling contact device.

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图 3 (a)透明接触器件和(b)隧穿接触器件的透射谱, 其中左边一列是自旋向上通道的透射谱, 右边一列是自旋向下通道的透射谱

Figure 3. Transmission spectra of (a) the transparent contact devices and (b) the tunneling contact devices. The left column is the transmission spectra of the spin up channel and the right column is the transmission spectra of the spin down channel.

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图 4 (a) Fe₃GeTe₂/石墨烯异质结能带; (b) Fe₃GeTe₂/氮化硼/石墨烯异质结能带; (c) Fe₃GeTe₂/石墨烯异质结差分电荷密度, 其中绿色代表电子损耗, 黄色代表电子积聚; (d) 费米能级上k点依赖的Fe₃GeTe₂态密度分布; 图4(a) 和图4 (b) 中左边一列为自旋向上能带, 右边一列为自旋向下能带

Figure 4. (a) Band structure of Fe₃GeTe₂/graphene heterojunction; (b) band structure of Fe₃GeTe₂/boron nitride/graphene heterojunction; (c) the differential charge density of Fe₃GeTe₂/graphene heterojunction, where the green and yellow represent electron depletion and accumulation respectively; (d) the k dependent density of states distribution at the Fermi level in Fe₃GeTe₂. In Fig. 4(a) and Fig. 4(b), the left column represents the spin up bands, and the right column represents the spin down bands.

DownLoad: Full-Size Img PowerPoint

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[2]	Li M, Su S, Wong H, Li L J 2019 Nature 567 169 Google Scholar
[3]	Geim A K, Grigorieva I V 2013 Nature 499 419 Google Scholar
[4]	Žutić I, Matos-Abiague A, Scharf B, Dery H, Belashchenko K 2019 Mater. Today 22 85 Google Scholar
[5]	Gong C, Li L, Li Z, Ji H, Stern A, Xia Y, Cao T, Bao W, Wang C, Wang Y, Qiu Z Q, Cava R J, Louie S G, Xia J, Zhang X 2017 Nature 546 265 Google Scholar
[6]	Huang B, Clark G, Navarro-Moratalla E, Klein D R, Cheng R, Seyler K L, Zhong D, Schmidgall E, McGuire M A, Cobden D H, Yao W, Xiao D, Jarillo-Herrero P, Xu X 2017 Nature 546 270 Google Scholar
[7]	Deng Y J, Yu Y, Song Y C, Zhang J Z, Wang N Z, Sun Z Y, Yi Y F, Wu Y Z, Wu S W, Zhu J Y, Wang J, Chen X H, Zhang Y B 2018 Nature 563 94 Google Scholar
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[9]	Yu W, Li J, Herng T S, Wang Z, Zhao X, Chi X, Fu W, Abdelwahab I, Zhou J, Dan J, Chen Z, Chen Z, Li Z, Lu J, Pennycook S J, Feng Y P, Ding J, Loh K P 2019 Adv. Mater. 31 1903779 Google Scholar
[10]	Fei Z, Huang B, Malinowski P, Wang W, Song T, Sanchez J, Yao W, Xiao D, Zhu X, May A F, Wu W, Cobden D H, Chu J, Xu X 2018 Nat. Mater. 17 778 Google Scholar
[11]	Jiang S, Li L, Wang Z, Mak K F, Shan J 2018 Nat. Nanotechnol. 13 549 Google Scholar
[12]	Jiang S, Shan J, Mak K F 2018 Nat. Mater. 17 406 Google Scholar
[13]	Huang B, Clark G, Klein D R, MacNeill D, Navarro-Moratalla E, Seyler K L, Wilson N, McGuire M A, Cobden D H, Xiao D, Yao W, Jarillo-Herrero P, Xu X 2018 Nat. Nanotechnol. 13 544 Google Scholar
[14]	Song T C, Cai X H, Tu M W Y, Zhang X O, Huang B V, Wilson N P, Seyler K L, Zhu L, Taniguchi T, Watanabe K, McGuire M A, Cobden D H, Xiao D, Yao W, Xu X D 2018 Science 360 1214 Google Scholar
[15]	Wang X, Tang J, Xia X, He C, Zhang J, Liu Y, Wan C, Fang C, Guo C, Yang W, Guang Y, Zhang X, Xu H, Wei J, Liao M, Lu X, Feng J, Li X, Peng Y, Wei H, Yang R, Shi D, Zhang X, Han Z, Zhang Z, Zhang G, Yu G, Han X 2019 Sci. Adv. 5 w8904 Google Scholar
[16]	Alghamdi M, Lohmann M, Li J, Jothi P R, Shao Q, Aldosary M, Su T, Fokwa B P T, Shi J 2019 Nano Lett. 19 4400 Google Scholar
[17]	Burch K S, Mandrus D, Park J 2018 Nature 563 47 Google Scholar
[18]	Lin X, Yang W, Wang K, Zhao W 2019 Nat. Electron. 2 274 Google Scholar
[19]	Gong C, Zhang X 2019 Science 363 v4450 Google Scholar
[20]	Dlubak B, Martin M, Deranlot C, Servet B, Xavier S, Mattana R, Sprinkle M, Berger C, De Heer W A, Petroff F, Anane A, Seneor P, Fert A 2012 Nat. Phys. 8 557 Google Scholar
[21]	Wang Z, Sapkota D, Taniguchi T, Watanabe K, Mandrus D, Morpurgo A F 2018 Nano Lett. 18 4303 Google Scholar
[22]	Li X, Lü J, Zhang J, You L, Su Y, Tsymbal E Y 2019 Nano Lett. 19 5133 Google Scholar
[23]	Zhang L, Huang X, Dai H, Wang M, Cheng H, Tong L, Li Z, Han X, Wang X, Ye L, Han J 2020 Adv. Mater. 32 2002032 Google Scholar
[24]	Wang H, Liu Y, Wu P, Hou W, Jiang Y, Li X, Pandey C, Chen D, Yang Q, Wang H, Wei D, Lei N, Kang W, Wen L, Nie T, Zhao W, Wang K L 2020 ACS Nano 14 10045 Google Scholar
[25]	May A F, Ovchinnikov D, Zheng Q, Hermann R, Calder S, Huang B, Fei Z, Liu Y, Xu X, McGuire M A 2019 ACS Nano 13 4436 Google Scholar
[26]	Perdew J P, Burke K, Ernzerhof M 1996 Phys. Rev. Lett. 77 3865 Google Scholar
[27]	Taylor J, Guo H, Wang J 2001 Phys. Rev. B 63 245407 Google Scholar
[28]	Brandbyge M, Mozos J, Ordejon P, Taylor J, Stokbro K 2002 Phys. Rev. B 65 165401 Google Scholar
[29]	Yang W, Cao Y, Han J, Lin X, Wang X, Wei G, Lv C, Bournel A, Zhao W 2021 Nanoscale 13 862
[30]	Maassen J, Ji W, Guo H 2011 Nano Lett. 11 151 Google Scholar

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Efficient spin injection in Fe₃GeTe₂/h-BN/graphene heterostructure

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Corresponding author: Lin Xiao-Yang, XYLin@buaa.edu.cn

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Efficient spin injection in Fe3GeTe2/h-BN/graphene heterostructure

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Efficient spin injection in Fe₃GeTe₂/h-BN/graphene heterostructure