A four-band perfect absorber based on high quality factor and high figure of merit of monolayer molybdenum disulfide

Jiang Li-Ying; Yi Ying-Ting; Yi Zao; Yang Hua; Li Zhi-You; Su Ju; Zhou Zi-Gang; Chen Xi-Fang; Yi You-Gen

doi:10.7498/aps.70.20202163

Abstract

Transition-metal dichalcogenides with exceptional electrical and optical properties have emerged as a new platform for atomic-scale optoelectronic devices. However, the poor optical absorption resists their potential applications. In this paper, monolayer molybdenum disulfide four-band perfect absorber based on critical coupling and guided mode resonance is proposed theoretically and numerically by the finite difference time domain method. Meanwhile, the physical mechanism can be better analyzed through impedance matching and coupled mode theory. Monolayer molybdenum disulfide is placed between the silicon dioxide and a two-dimensional polymethyl methacrylate layer with a periodic square-shaped air groove structure. The three form a sandwich-like stacked structure similar to a rectangle. The bottom of the absorber uses a silver layer as the back reflection layer. Using the critical coupling principle of guided resonance, the high-efficiency light absorption of the monolayer molybdenum disulfide is obtained, that is, four perfect resonances are obtained at the resonance wavelengths (λ₁ = 510.0 nm, λ₂ = 518.8 nm, λ₃ = 565.9 nm, and λ₄ = 600.3 nm), the absorption rates are 99.03%, 98.10%, 97.30%, and 95.41%, and the average absorption rate is as high as 97.46% in the visible light spectrum range, which is over 12 times more than that of a bare monolayer MoS₂. The simulation results show that the adjusting of the geometric parameters of the structure can control the range of the resonance wavelength of the monolayer molybdenum disulfide, the system experiences three states, i.e. under-coupling, critical coupling, and over-coupling because of the leakage rate of resonance, thereby exhibiting advantageous tunability of operating wavelength in monolayer MoS₂, which has important practical significance for improving the absorption intensity and selectivity of the monolayer molybdenum disulfide. The novel idea of using critical coupling to enhance the light-MoS₂ interaction can also be adopted in other atomically thin materials. At the same time, in this article the sensing performance of the absorber is discussed, and it is found that the highest quality factor, sensitivity and figure of merit of the sensor are 1294.1, 155.1 nm/RIU, and 436, respectively. The proposed structure is simple and the program is versatile. And these results indicate that the designed structure may offer a promising technology for improving the light-matter interaction in two-dimensional transition metal binary compounds, and has excellent application prospects in wavelength selective photoluminescence and photodetection.

Keywords:

Authors and contacts

1.
School of Science, Southwest University of Science and Technology, Mianyang 621010, China
2.
School of Physics and Electronics, Central South University, Changsha 410083, China
3.
School of Science, Lanzhou University of Technology, Lanzhou 730050, China

Corresponding author: Yi Zao, yizaomy@swust.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 1187522), the Scientific Research Foundation of Sichuan Provincial Science and Technology Department, China (Grant Nos. 2020YJ0137, 2020YFG0467), and the Innovation Fund Project of School of Science, Southwest University of Science and Technology, China (Grant No. LX2020010)

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Cited By

图 1 (a) 单层MoS₂吸收增强系统的3D示意图; (b) 对应的俯视图; 具体的几何参数如图中所示

Figure 1. (a) 3D schematic diagram of monolayer MoS₂ absorption enhancement system; (b) the corresponding top view. The specific geometric parameters are shown in the figure.

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图 2 (a) 在D₁ = 220 nm, D₂ = 175 nm, D₃ = 0.615 nm, D₄ = 380 nm, P_x = 1010 nm, P_y = 890 nm, W₁ = 89 nm, W₂ = 170 nm, A = 832 nm, B = 712 nm时完美吸收器中的MoS₂单层(蓝线)的吸收光谱, 为了进行比较, 示出了无MoS₂整个吸收器(红线)和裸MoS₂单层(黑线)的光吸收光谱(图中Mode A对应吸收峰1, Mode B对应吸收峰2, Mode C对应吸收峰3, Mode D对应吸收峰4); (b)理想吸收峰的有效阻抗的实部(蓝线Re(Z))和虚部(绿线Im(Z))

Figure 2. (a) Absorption spectrum of MoS₂ monolayer (blue line) in the perfect absorber at D₁ = 220 nm, D₂ = 175 nm, D₃ = 0.615 nm, D₄ = 380 nm, P_x = 1010 nm, P_y = 890 nm, W₁ = 89 nm, W₂ = 170 nm, A = 832 nm, B = 712 nm. For comparison, the light absorption spectra of the entire absorber without MoS₂ (red line) and bare MoS₂ monolayer (black line) are shown (Mode A corresponds to absorption peak 1, Mode B corresponds to absorption peak 2, Mode C corresponds to absorption peak 3, Mode D corresponds to absorption peak 4); (b) the real part (blue line Re(Z)) and imaginary part (green line Im(Z)) of the effective impedance showing the ideal absorption peak.

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图 3 正常TM偏振光下含(a) 和不含 (b) 银反射层结构的吸收、反射和透射光谱的数值计算, 其中A代表吸收, R代表反射, T代表透射

Figure 3. Numerical calculation of the absorption, reflection and transmission spectra of the structure with (a) and without (b) silver layer under normal TM polarized light, where A represents absorption, R represents reflection, and T represents transmission.

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图 4 在D₁ = 220 nm, D₂ = 175 nm, D₃ = 0.615 nm, D₄ = 380 nm, P_x = 1010 nm, P_y = 890 nm, A = 832 nm, B = 712 nm条件下, 空气槽为(a) 长方体、(b) 交叉椭圆盘与 (c) 三棱柱时的吸收光谱

Figure 4. Absorption spectra when the air groove is (a) cuboid, (b) cross-elliptic disk, (c) triangular prism. D₁ = 220 nm, D₂ = 175 nm, D₃ = 0.615 nm, D₄ = 380 nm, P_x = 1010 nm, P_y = 890 nm, A = 832 nm, B = 712 nm,

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图 5 MoS₂吸收器在(a)−(c) 共振模式B (共振波长为518.8 nm)下x -y, y -z和x -z截面的电场(|E|)分布的模拟结果; 在垂直入射下, (d)−(f) 非共振模式(非共振波长542.0 nm)时其x -y, y -z和x -z截面的电场(|E|)分布的模拟结果

Figure 5. Simulated electric field (|E|) distributions of (a)−(c) resonance mode B (resonant wavelength of 518.8 nm) in x -y, y -z and x -z based on the MoS₂ absorber; (d)−(f) simulated electric field (|E|) distributions of non-resonant mode (non-resonant wavelength 542.0 nm) in x -y, y -z and x -z under normal incidence.

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图 6 (a)−(d) x -y截面的电场图; (e)−(h) y -z截面的电场图; (i)−(l) x -z截面的电场图 (图中Mode A对应吸收峰1, Mode B对应吸收峰2, Mode C对应吸收峰3, Mode D对应吸收峰4, λ₁ = 510.0 nm, λ₂ = 518.8 nm, λ₃ = 565.9 nm, λ₄ = 600.3 nm)

Figure 6. (a)−(d) Electric field diagrams of the x -y cross section; (e)−(h) the electric field diagrams of the y -z cross section; (i)−(l) the electric field diagrams of the x -z cross section. Mode A corresponds to absorption peak 1, Mode B corresponds to absorption peak 2, Mode C corresponds to absorption peak 3, Mode D corresponds to absorption peak 4. λ₁ = 510.0 nm, λ₂ = 518.8 nm, λ₃ = 565.9 nm, λ₄ = 600.3 nm.

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图 7 (a) 当D₂从155 nm增长到195 nm时, 结构对应的光吸收情况; (b) 当W₁从170 nm增长到210 nm时, 结构对应的光吸收情况

Figure 7. (a) Corresponding light absorption of the structure when D₂ increases from 155 to 195 nm; (b) the corresponding light absorption of the structure when W₁ increases from 170 to 210 nm.

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图 8 (a) D₄与吸收率的关系图; (b) D₄与对应共振波长范围的关系图; (c) W₂与吸收率的关系图; (d) W₂与对应共振波长范围的关系图; 图中Mode A对应吸收峰1, Mode B对应吸收峰2, Mode C对应吸收峰3, Mode D对应吸收峰4

Figure 8. (a) Relationship diagram between D₄ and the absorption rate; (b) the relationship diagram between D₄ and the corresponding resonance wavelength range; (c) the relationship diagram between W₂ and the absorption rate; (d) the relationship diagram between W₂ and the corresponding resonance wavelength range. Mode A corresponds to absorption peak 1, Mode B corresponds to absorption peak 2, Mode C corresponds to absorption peak 3, Mode D corresponds to absorption peak 4.

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图 9 (a)−(d) 保持其他参数不变, 周期与吸收峰波长和品质因子的函数关系(图中Mode A对应吸收峰1, Mode B对应吸收峰2, Mode C对应吸收峰3, Mode D对应吸收峰4)

Figure 9. (a)−(d) Relationship among the period, the absorption peak wavelength, and Q-factor (quality factor) when other parameters are kept constant (Mode A corresponds to absorption peak 1, Mode B corresponds to absorption peak 2, Mode C corresponds to absorption peak 3, Mode D corresponds to absorption peak 4).

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图 10 (a) 四个共振峰的吸收光谱随周围介质折射率的变化而移动; (b)−(e)当周围传感介质的折射率发生变化时(折射率从1.0到1.08, 间隔为0.02), 四个峰值的FOM与FWHM和波长的关系图 (图中Mode A对应吸收峰1, Mode B对应吸收峰2, Mode C对应吸收峰3, Mode D对应吸收峰4)

Figure 10. (a) Absorption spectra of the four resonance peaks move with the change in the refractive index of the surrounding medium; (b)−(e) when the refractive index of the surrounding sensing medium changes (the refractive index is from 1.0 to 1.08, the interval is 0.02), the relationships of FOM value of the four peaks and FWHM to wavelength (Mode A corresponds to absorption peak 1, Mode B corresponds to absorption peak 2, Mode C corresponds to absorption peak 3, Mode D corresponds to absorption peak 4).

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表 1 所提出的吸收器与其他类似吸收器的比较

Table 1. Comparisons of the proposed absorber with other similar absorbers.

参考文献波长/nm 半峰全宽/nm 品质因子

[30] 662 11.5 57.57
[50] 1500 20 75
[51] 679.2 8.72 77.89
[52] 663 11.35 58.32
[53] 661 9 73
[54] 408 7.34 55.59
本文 531.9 0.4 1294.1

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表 2 其他类似吸收器的FOM值的比较结果

Table 2. Comparisons of FOM values of other similar absorbers.

参考文献 [59] [60] [61] [62] [63] [64] 本文

FWHM/nm 50 8 3.94 97 50 100 0.3
FOM (max) 2.8 25 254 4.68 7.1 3.1 436

DownLoad: CSV

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[23]	Bahauddin S M, Robatjazi H, Thomann I 2016 ACS Photonics 3 853 Google Scholar
[24]	Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A 2013 Nat. Nanotechnol. 8 497 Google Scholar
[25]	Sobhani A, Lauchner A, Najmaei S, Ayala-Orozco C, Wen F, Lou J, Halas N J 2014 Appl. Phys. Lett. 104 031112 Google Scholar
[26]	Late D J, Liu B, Matte H S, Dravid V P, Rao C N R 2012 ACS Nano 6 5635 Google Scholar
[27]	Bernardi M, Palummo M, Grossman J C 2013 Nano Lett. 13 3664 Google Scholar
[28]	Janisch C, Song H, Zhou C, Lin Z, Elías A L, Ji D, Liu Z 2016 2D Mater. 3 025017 Google Scholar
[29]	Liu J T, Wang T B, Li X J, Liu N H 2014 J. Appl. Phys. 115 193511 Google Scholar
[30]	Lu H, Gan X, Mao D, Fan Y, Yang D, Zhao J 2017 Opt. Express 25 21630 Google Scholar
[31]	Cao J, Wang J, Yang G, Lu Y, Sun R, Yan P, Gao S 2017 Superlattices Microstruct. 110 26 Google Scholar
[32]	Zheng J B, Barton R A, Englund D 2014 ACS Photonics 1 768 Google Scholar
[33]	Piper J R, Fan S H 2016 ACS Photonics 3 3571 Google Scholar
[34]	Li Y, Chernikov A, Zhang X, Rigosi A, Hill H M, Van der Zande A M, Chenet D A, Shih E M, Hone J, Heinz T F 2014 Phys. Rev. B 90 205422 Google Scholar
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