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NO2 is a toxic gas that reacts with other organic compounds in the air, causing air pollution and posing a significant risk to humans. Therefore, a gas sensor is needed to detect NO2. However, conventional NO2 gas sensors are difficult to operate at room temperature (25℃). In this study, NO2 gas sensing by SnS2/In2O3 at room temperature (25℃) is reported. In2O3 quantum dots and SnS2 nanosheets were prepared by the hot-injection and hydrothermal methods. By virtue of the unique two-dimensional structure of SnS2, In2O3 was decorated on it, and the composite enhanced its sensing performance. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). The results demonstrate that the composites prepared by 52% In2O3 exhibit the best sensing response. The fabricated sensor shows a response of 26.6 to 1000 ppb NO2, along with fast response and recovery times, respectively, at room temperature (25℃). Moreover, this sensor demonstrates excellent reproducibility and selectivity. The heterojunction structure increases the number of active sites and accelerates the gas transport, which promotes charge transfer and gas desorption to improve NO2 gas sensing performance. This excellent sensing performance has a great application prospect in NO2 detection.
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Keywords:
- Gas sensing /
- SnS2/In2O3 /
- NO2 /
- room temperature
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