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Etching effects of low energy argon ion beam on porous anodic aluminum oxide membranes

Wang Sen Yu Guo-Jun Gong Jin-Long Li Qin-Tao Zhu De-Zhang Zhu Zhi-Yuan

Etching effects of low energy argon ion beam on porous anodic aluminum oxide membranes

Wang Sen, Yu Guo-Jun, Gong Jin-Long, Li Qin-Tao, Zhu De-Zhang, Zhu Zhi-Yuan
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Publishing process
  • Received Date:  15 June 2005
  • Accepted Date:  25 July 2005
  • Published Online:  20 March 2006

Etching effects of low energy argon ion beam on porous anodic aluminum oxide membranes

  • 1. 中国科学院上海应用物理研究所,上海 201800

Abstract: Porous anodic aluminum oxide (AAO) membranes were sputtered by 500eV argon ion ( Ar+) beam. Scanning electron microscopy and atomic force microscopy i mages show that not only the barrier layer of AAO can be easily removed by Ar+ beam sputtering, but also several categories of surface morphologies w ere got by changing the incidence parameters. For instance, off-normal incidence bombardment results in ripple formation on the surface of AAO and off-normal in cidence during smple stage rotation leads to AAO surface smoothing. Theory of ri pple formation and evolution on amorphous substrate under ion beam irradiation d eveloped by Bradley and Harper is used to interpret the characteristics of rippl es on AAO surface.

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