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Characteristics of the Si-doped ferromagnetic shape memory alloy Co50Ni21Ga29Six

Dai Xue-Fang Liu Zhu-Hong Yu Shu-Yun Chen Jing-Lan Wu Guang-Heng Wang Xin-Qiang Liu Guo-Dong

Characteristics of the Si-doped ferromagnetic shape memory alloy Co50Ni21Ga29Six

Dai Xue-Fang, Liu Zhu-Hong, Yu Shu-Yun, Chen Jing-Lan, Wu Guang-Heng, Wang Xin-Qiang, Liu Guo-Dong
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  • Received Date:  09 June 2006
  • Accepted Date:  08 August 2006
  • Published Online:  11 July 2007

Characteristics of the Si-doped ferromagnetic shape memory alloy Co50Ni21Ga29Six

  • 1. (1)中国科学院物理研究所磁学国家重点实验室,北京 100080; (2)重庆大学数理学院,重庆 400044; (3)重庆大学数理学院,重庆 400044;中国科学院物理研究所磁学国家重点实验室,北京 100080

Abstract: In order to improve the properties of Co—Ni—Ga alloys, experiments of adding Si to Co50Ni21Ga29 alloys were carried out to examine the effect of Si in quaternary Co50Ni21Ga29Six (x=1—2) alloys on their structure, martensitic transformation behavior and magnetic properties. The Co50Ni21Ga29Six (x=1,2) single crystals were successfully grown. All the samples with low Si doping show a sharp martensitic transformation with increasing temperature. The single crystal samples show a completely recoverable two-way shape memory with a strain of 2.5% upon the thermoelastic martensitic transformation. A large magnetic-field-induced strain of 110 ppm was measured at room temperature. A small quantity of Si doping can down-shift the martensitic transformation temperature, reduce the thermal hysteresis, decrease the magnetization but increase the Curie temperature. Especially, the Si doping can increase the magnetic anisotropy of Co—Ni—Ga-alloys, which is available to obtain large magnetic-field-induced strain in a low magnetic field. An electronic resistance “jump" of 4.5% upon the thermoelastic martensitic transformation was also reported.

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