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Study of Si-doped Sb2Te3 films for phase change memory

Chen Bomy Cai Yan-Fei Lin Yin-Yin Tang Ting-Ao Zhang Zu-Fa Zhang Yin Feng Jie Cai Bing-Chu

Study of Si-doped Sb2Te3 films for phase change memory

Chen Bomy, Cai Yan-Fei, Lin Yin-Yin, Tang Ting-Ao, Zhang Zu-Fa, Zhang Yin, Feng Jie, Cai Bing-Chu
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Publishing process
  • Received Date:  30 September 2006
  • Accepted Date:  14 December 2006
  • Published Online:  20 July 2007

Study of Si-doped Sb2Te3 films for phase change memory

  • 1. (1)Silicon Storage Technology Inc.,Sunnyvale,CA94086,USA; (2)复旦大学专用集成电路和系统国家重点实验室,上海 200433; (3)上海交通大学“薄膜与微细技术”教育部重点实验室,“微米/纳米加工技术”国家级重点实验室,微纳科学技术研究院,上海 200030

Abstract: Silicon doped Sb2Te3 films were deposited by three target (Si, Sb and Te) co-sputtering. For comparison, Ge2Sb2Te5 and Sb2Te3 films were also prepared. Memory cells (pore size=10 μm×10 μm) were fabricated by micro-fabrication to further study their storage performance. Results indicate that silicon doping increases the crystallization temperature. Meanwhile, silicon doping drastically enhances the resistivity ratio (high resistance state/low resistance state) to 106 by increasing both amorphous resistivity and crystal resistivity so as to further increasing the ON/OFF ratio of memory cell. Compared with Ge2Sb2Te5 film, 16at%Si-Sb2Te3 film has a higher crystalline resistivity and lower melting temperature, which are helpful to the reduction of RESET current. Memory cell with silicon doped Sb2Te3 film poccesses memory storage characteristics, and it can be reversibly switched between the high resistance state (RESET status) and the low resistance state (SET status). The SET status can be triggered by electrical pulse of 3V, 500ns and it comes back to the RESET status when 4V, 20ns pulse is applied, while Ge2Sb2Te5 cells, with the same structure can't be switched back to RESET state.

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