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A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector

Zhao De-Gang Zhou Mei Chang Qing-Ying

A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector

Zhao De-Gang, Zhou Mei, Chang Qing-Ying
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Publishing process
  • Received Date:  26 June 2007
  • Accepted Date:  19 November 2007
  • Published Online:  05 February 2008

A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector

  • 1. (1)中国科学院半导体研究所集成光电子学国家重点实验室,北京 100083; (2)中国农业大学应用物理系,北京 100083

Abstract: A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector is proposed. In comparision with conventional i-GaN/n+-GaN structure, an additional thin p-GaN cap layer is introduced on the i-GaN(n--GaN) in the new structure. The simulation results showed that the additional layer makes the dark current to decrease in the photodetector due to the increase of the Schottky barrier height. The effects of thickness and carrier concentration of p-GaN layer on the dark current of the photodetector were also studied. It is suggested that the dark current of the new structure device could be better reduced by employing p-GaN with higher carrier concentration as the cap layer.

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