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Influence of annealing oxygen pressure on the laser-induced thermoelectric voltage effect in YBa2Cu3O7-x thin films

Jiang Zui-Min Xiong Fei Zhang Hui Li Hong-Shan Zhang Peng-Xiang

Influence of annealing oxygen pressure on the laser-induced thermoelectric voltage effect in YBa2Cu3O7-x thin films

Jiang Zui-Min, Xiong Fei, Zhang Hui, Li Hong-Shan, Zhang Peng-Xiang
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  • Received Date:  13 November 2007
  • Accepted Date:  25 April 2008
  • Published Online:  20 August 2008

Influence of annealing oxygen pressure on the laser-induced thermoelectric voltage effect in YBa2Cu3O7-x thin films

  • 1. (1)复旦大学应用表面物理国家重点实验室,上海 200433; (2)昆明理工大学光电子新材料研究所,昆明 650051

Abstract: The laser-induced thermoelectric voltage (LITV) signals were measured in the YBa2Cu3O7-x (YBCO) films annealed under different oxygen pressure. It was found that the detected LITV signals were enhanced 2—4 times with the increasing of annealing oxygen pressure. The effect can be explained by the dependence of thermoelectric anisotropy on the oxygen content in YBCO. When the films were illuminated by continuous lasers in the wavelength range of 473—808nm, the measured signals in the films annealed under 5000Pa oxygen pressure were larger than those in other films. Meanwhile, pulse ultraviolet laser illumination produced the largest signal in the films annealed under oxygen pressure of 105Pa. The response time of LITV signals was observed to become shorter with the increasing of annealing oxygen pressure, which was shown to have resulted from the increasing of thermal conductivity theoretically. The films annealed under 5000Pa oxygen pressure had the fastest response to the pulsed ultraviolet laser. The response time was 70ns and the rise time of 29ns was comparable to the duration of the applied laser pulse (about 28ns).

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