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氧压对Ba0.6Sr0.4TiO3薄膜晶格常数的影响及BaTiO3/Ba0.6Sr0.4TiO3超晶格的制备

尚杰 张辉 曹明刚 张鹏翔

氧压对Ba0.6Sr0.4TiO3薄膜晶格常数的影响及BaTiO3/Ba0.6Sr0.4TiO3超晶格的制备

尚杰, 张辉, 曹明刚, 张鹏翔
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  • 采用脉冲激光沉积(PLD)技术,经一系列的优化实验成功地制备了BaTiO3(BT)和Ba0.6Sr0.4TiO3(BST)单层膜.X射线衍射分析表明,在LaAlO3(001)单晶平衬底上生长的BT和BST薄膜都是沿[001]取向的近外延生长.且随着氧压在10-3—25 Pa范围内逐渐增大,BST薄膜的晶格常数与氧压之间近似满足Boltzmann函数关系.其次,在此优化条件下还
    [1]

    Cao W W, Lü T Q, Xie W G, Zhou J 2009 Chin. Phys. B 18 3054

    [2]

    Cui L, Lü T Q, Sun P N 2009 Chin. Phys. B 18 1658

    [3]

    Li J J, Yu J, Li J, Yang W M, Wu Y Y, Wang G B 2009 Acta Phys. Sin. 58 1246 (in Chinese) [李建军、于 军、李 佳、杨卫明、吴云翼、王耘波 2009 物理学报 58 1246]

    [4]

    Wang L H, Yu J, Wang Y B, Cao J X, Zhao S L 2008 Acta Phys. Sin. 57 1207 (in Chinese) [王龙海、于 军、王耘波、高俊雄、赵素玲 2008 物理学报 57 1207]

    [5]

    Aulika I, Pokorny J, Zauls V, Kundzins K, Rutkis M, Petzelt J 2008 Optical Materials 30 1017

    [6]

    Scarisoreanu N, Filipescu M, Ioachim A, Toacsan M I, Banciu M G, Nedelcu L, Dutu A, Buda M, Alexandru H V, Dinescu M 2007 Applied Surface Science 253 8254

    [7]

    Benoit G, Julie G, Emmanuel D, Pierre G, David W, Bernard A, Frédéric L, Roland P, Xavier G, Marc A 2007 Journal of the European Ceramic Society 27 3851

    [8]

    Scott J F, Annu 1998 Rev. Mater. Sci. 28 79

    [9]

    Takasu H 2000 J. Electroceram. 4 327

    [10]

    Cheng H F 1996 J. Appl. Phys. 79 7965

    [11]

    Lariviere G P, Frigerio J M, Rivory J, Abeles F 1992 Appl. Opt. 31 6509

    [12]

    Borgogno J P, Flory F, Roche P, Schmitt B, Albert G, Pelletier E, Macleod H A 1984 Appl. Opt. 23 3567

    [13]

    Ning Z Y, Jing M F, Xin Y, Ye C 2008 Thin Solid Film Materials and Preparation Technology (Beijing: Science Press) p108 (in Chinese) [宁兆元、江美福、辛 煜、叶 超 2008 固体薄膜材料与制备技术(北京:科学出版社) 第108页]

    [14]

    Wu H D, Barnes F S 1998 in: O. Auciello (Ed.), Integrated Ferroelectrics,Proceedings of the 10th International Symposium on Integrated Ferroelectrics,Monterey, U.S.A, March 1—4 22 291

    [15]

    Horwitz J S, Chang W, Carter A C, Pond J M, Kirchoefer S W, Chrisey D B, Levy J, Hubert C 1998 in: O. Auciello (Ed.), Integrated Ferroelectrics, Proceedings of the 10th International Symposium on Integrated Ferroelectrics, Monterey, U.S.A, March 1—4 22 279

    [16]

    Jain M, Majumder S B, Katiyar R S, Miranda F A, Van Keuls F W 2003 Appl. Phys. Lett. 82 1911

    [17]

    Joshi P C, Cole M W 2000 Appl. Phys. Lett. 77 289

    [18]

    Kim W J, Chang W, Qadri S B, Pond J M, Kirchoefer S W, Chrisey D B, Horwitz J S 2000 Appl. Phys. Lett. 76 1185

    [19]

    Hubert C, Levy J, Rivkin T V, Carlson C, Parilla P A, Perkins J D, Ginley D S 2001 Appl. Phys. Lett. 79 2058

    [20]

    Kim W J, Wu H D, Chang W, Qadri S B, Pond J M, Kirchoefer S W, Chrisey D B, Horwitz J S 2000 J. Appl. Phys. 88 5448

    [21]

    Navi N, Kim H, Horwitz J S, Wu H D, Qadri S B 2003 Appl. Phys. A 76 841

    [22]

    Ding Y P, Wu J S, Meng Z Y, Chan H L, Choy Z L 2002 Materials Chemistry and Physics 75 220

    [23]

    Park B H, Gim Y, Fan Y, Jia Q X, Lu P 2000 Appl.Phy.Lett. 77 2587

    [24]

    Carlson C M, Rivkin T V, Parilla P A, Perking J D, Ginley D B, Kozyerv A B, Oshadchy V N, Pavlov A S 2000 Appl.Phy.Lett. 76 1920

    [25]

    Lebedev O I, Hamet J F, Van Tendeloo G , Beaumont V , Raveau B 2001 J . Appl. Phys .90 5261

    [26]

    Schuller Y K 1980 Phys. Rev. B 24 1597

  • [1]

    Cao W W, Lü T Q, Xie W G, Zhou J 2009 Chin. Phys. B 18 3054

    [2]

    Cui L, Lü T Q, Sun P N 2009 Chin. Phys. B 18 1658

    [3]

    Li J J, Yu J, Li J, Yang W M, Wu Y Y, Wang G B 2009 Acta Phys. Sin. 58 1246 (in Chinese) [李建军、于 军、李 佳、杨卫明、吴云翼、王耘波 2009 物理学报 58 1246]

    [4]

    Wang L H, Yu J, Wang Y B, Cao J X, Zhao S L 2008 Acta Phys. Sin. 57 1207 (in Chinese) [王龙海、于 军、王耘波、高俊雄、赵素玲 2008 物理学报 57 1207]

    [5]

    Aulika I, Pokorny J, Zauls V, Kundzins K, Rutkis M, Petzelt J 2008 Optical Materials 30 1017

    [6]

    Scarisoreanu N, Filipescu M, Ioachim A, Toacsan M I, Banciu M G, Nedelcu L, Dutu A, Buda M, Alexandru H V, Dinescu M 2007 Applied Surface Science 253 8254

    [7]

    Benoit G, Julie G, Emmanuel D, Pierre G, David W, Bernard A, Frédéric L, Roland P, Xavier G, Marc A 2007 Journal of the European Ceramic Society 27 3851

    [8]

    Scott J F, Annu 1998 Rev. Mater. Sci. 28 79

    [9]

    Takasu H 2000 J. Electroceram. 4 327

    [10]

    Cheng H F 1996 J. Appl. Phys. 79 7965

    [11]

    Lariviere G P, Frigerio J M, Rivory J, Abeles F 1992 Appl. Opt. 31 6509

    [12]

    Borgogno J P, Flory F, Roche P, Schmitt B, Albert G, Pelletier E, Macleod H A 1984 Appl. Opt. 23 3567

    [13]

    Ning Z Y, Jing M F, Xin Y, Ye C 2008 Thin Solid Film Materials and Preparation Technology (Beijing: Science Press) p108 (in Chinese) [宁兆元、江美福、辛 煜、叶 超 2008 固体薄膜材料与制备技术(北京:科学出版社) 第108页]

    [14]

    Wu H D, Barnes F S 1998 in: O. Auciello (Ed.), Integrated Ferroelectrics,Proceedings of the 10th International Symposium on Integrated Ferroelectrics,Monterey, U.S.A, March 1—4 22 291

    [15]

    Horwitz J S, Chang W, Carter A C, Pond J M, Kirchoefer S W, Chrisey D B, Levy J, Hubert C 1998 in: O. Auciello (Ed.), Integrated Ferroelectrics, Proceedings of the 10th International Symposium on Integrated Ferroelectrics, Monterey, U.S.A, March 1—4 22 279

    [16]

    Jain M, Majumder S B, Katiyar R S, Miranda F A, Van Keuls F W 2003 Appl. Phys. Lett. 82 1911

    [17]

    Joshi P C, Cole M W 2000 Appl. Phys. Lett. 77 289

    [18]

    Kim W J, Chang W, Qadri S B, Pond J M, Kirchoefer S W, Chrisey D B, Horwitz J S 2000 Appl. Phys. Lett. 76 1185

    [19]

    Hubert C, Levy J, Rivkin T V, Carlson C, Parilla P A, Perkins J D, Ginley D S 2001 Appl. Phys. Lett. 79 2058

    [20]

    Kim W J, Wu H D, Chang W, Qadri S B, Pond J M, Kirchoefer S W, Chrisey D B, Horwitz J S 2000 J. Appl. Phys. 88 5448

    [21]

    Navi N, Kim H, Horwitz J S, Wu H D, Qadri S B 2003 Appl. Phys. A 76 841

    [22]

    Ding Y P, Wu J S, Meng Z Y, Chan H L, Choy Z L 2002 Materials Chemistry and Physics 75 220

    [23]

    Park B H, Gim Y, Fan Y, Jia Q X, Lu P 2000 Appl.Phy.Lett. 77 2587

    [24]

    Carlson C M, Rivkin T V, Parilla P A, Perking J D, Ginley D B, Kozyerv A B, Oshadchy V N, Pavlov A S 2000 Appl.Phy.Lett. 76 1920

    [25]

    Lebedev O I, Hamet J F, Van Tendeloo G , Beaumont V , Raveau B 2001 J . Appl. Phys .90 5261

    [26]

    Schuller Y K 1980 Phys. Rev. B 24 1597

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出版历程
  • 收稿日期:  2010-03-16
  • 修回日期:  2010-04-28
  • 刊出日期:  2011-01-15

氧压对Ba0.6Sr0.4TiO3薄膜晶格常数的影响及BaTiO3/Ba0.6Sr0.4TiO3超晶格的制备

  • 1. 昆明理工大学光电子新材料研究所,昆明 650093

摘要: 采用脉冲激光沉积(PLD)技术,经一系列的优化实验成功地制备了BaTiO3(BT)和Ba0.6Sr0.4TiO3(BST)单层膜.X射线衍射分析表明,在LaAlO3(001)单晶平衬底上生长的BT和BST薄膜都是沿[001]取向的近外延生长.且随着氧压在10-3—25 Pa范围内逐渐增大,BST薄膜的晶格常数与氧压之间近似满足Boltzmann函数关系.其次,在此优化条件下还

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