-
[1] Yu P, Tang Z K, Wong G K L, Kawasaki M, Segawa Y 1996 23nd Int. Conf. On the physics of Semiconductor World Scientific, Singapore, July 22— 26, 1996, 2 p1453
[2] Bagnall D M, Chen Y F, Zhu Z, Yao T, Shen M Y, Goto T 1998 Appl. Phys. Lett. 73 1038
[3] Chang J F, Lin W C, Hon M H 2001 Appl. Surface Sci. 18 183
[4] Minami T, Sato H, Nanto H, Takata S 1985 Jpn.J.Appl.Phys. 24 781
[5] Tang W, Cameron D C 1994 Thin Solid Films. 83 238
[6] Bhushan S, Pandey A N, Balakrishna R K 1979 Journal of Luminescence 20 29
[7] Minami T, Yamamoto T, Miyata T 2000 Thin Solid Films 366 63
[8] Chen J T, Wang J, Zhang F, Zhang G A, Wu Z G, Yan P X 2008 Journal of Crystal Growth 310 3627
[9] Kaur R, Singh A V, Mehra R M 2004 Materials Science Poland 22 201
[10] Jin X L, Lou S Y, Kong D G, Li Y C, Du Z L 2006 Acta Phys. Sin. 55 4809(in Chinese) [靳锡联、娄世云、孔德国、李蕴才、杜祖亮 2006 物理学报 55 4809]
[11] Shen Y B, Zhou X, Xu M, Ding Y C, Duan M Y, Linghu R F, Zhu W J 2007 Acta Phys. Sin. 56 3440(in Chinese)[沈益斌、周 勋、徐 明、丁迎春、段满益、令狐荣锋、祝文军 2007 物理学报 56 3440]
[12] Ding Y C, Xiang A P, Xu M, Zhu W J 2007 Acta Phys. Sin. 56 5996(in Chinese) [丁迎春、向安平、徐明、祝文军 2007 物理学报 56 5996]
[13] Xu X F, Shao X H 2009 Acta Phys. Sin. 58 1908(in Chinese) [徐新发、邵晓红 2009 物理学报58 1908]
[14] Zhang C, Wang C L, Li J C, Yang K, Zhang Y F, Wu Q Z 2008 Materials Chemistry and Physics 107 215
[15] Sun J, Wang H T, He J L, TianY J 2005 Phys. Rev. B 71 125132
[16] Yang Y T, Wu J, Cai Y R, Ding R X, Song J X, Shi L C 2008 Acta Phys. Sin. (in Chinese) 57 7151[杨银堂、武 军、蔡玉荣、丁瑞雪、宋久旭、石立春 2008 物理学报 57 7151]
[17] Kohan A F, Ceder G, Morgan D 2000 Phys. Rev. B 61 15019
[18] Liu E K, Zhu B S, Luo J S 2008 Physics of semiconductor (Beijing:Publishing House of Electronics Industry) p93 (in Chinese)[刘恩科、朱秉升、罗晋生 2008 半导体物理学(第七版)(北京:电子工业出版社)第93页]
[19] Noll J L 1964 Physics of Semiconductors(New York: McGraw-Hill) p198
[20] Conwell E 1959 J. Phys. Chem. Solids 8 234
[21] Shockley W 1951 Bell System Technical Journal 30 990
[22] Yu Q J, Fu W Y, Yu C L, Yang H B, Wei R H, Sui Y M, Liu S K, Liu Z L, Li M H, Wang G R, Shao C L, Liu Y C, Zou G T 2007 J.Phys.D: Appl.Phys. 40 5592
[23] Zhao H F, Cao Q X, Li J T 2008 Acta Phys. Sin. 57 5828(in Chinese)[赵慧芳、曹全喜、李建涛 2008 物理学报 57 5828]
[24] Shen X C 1992 The Optical Properties of Semiconductor(Beijing:SciencePress)p24—148 (in Chinese)[沈学础 1992 半导体光学性质(北京:科学出版社)第24—148页]
[25] Lan W, Liu Y P, Zhang M, Wang B, Yan H, Wang Y Y 2007 Materials Letters 61 2262
-
[1] Yu P, Tang Z K, Wong G K L, Kawasaki M, Segawa Y 1996 23nd Int. Conf. On the physics of Semiconductor World Scientific, Singapore, July 22— 26, 1996, 2 p1453
[2] Bagnall D M, Chen Y F, Zhu Z, Yao T, Shen M Y, Goto T 1998 Appl. Phys. Lett. 73 1038
[3] Chang J F, Lin W C, Hon M H 2001 Appl. Surface Sci. 18 183
[4] Minami T, Sato H, Nanto H, Takata S 1985 Jpn.J.Appl.Phys. 24 781
[5] Tang W, Cameron D C 1994 Thin Solid Films. 83 238
[6] Bhushan S, Pandey A N, Balakrishna R K 1979 Journal of Luminescence 20 29
[7] Minami T, Yamamoto T, Miyata T 2000 Thin Solid Films 366 63
[8] Chen J T, Wang J, Zhang F, Zhang G A, Wu Z G, Yan P X 2008 Journal of Crystal Growth 310 3627
[9] Kaur R, Singh A V, Mehra R M 2004 Materials Science Poland 22 201
[10] Jin X L, Lou S Y, Kong D G, Li Y C, Du Z L 2006 Acta Phys. Sin. 55 4809(in Chinese) [靳锡联、娄世云、孔德国、李蕴才、杜祖亮 2006 物理学报 55 4809]
[11] Shen Y B, Zhou X, Xu M, Ding Y C, Duan M Y, Linghu R F, Zhu W J 2007 Acta Phys. Sin. 56 3440(in Chinese)[沈益斌、周 勋、徐 明、丁迎春、段满益、令狐荣锋、祝文军 2007 物理学报 56 3440]
[12] Ding Y C, Xiang A P, Xu M, Zhu W J 2007 Acta Phys. Sin. 56 5996(in Chinese) [丁迎春、向安平、徐明、祝文军 2007 物理学报 56 5996]
[13] Xu X F, Shao X H 2009 Acta Phys. Sin. 58 1908(in Chinese) [徐新发、邵晓红 2009 物理学报58 1908]
[14] Zhang C, Wang C L, Li J C, Yang K, Zhang Y F, Wu Q Z 2008 Materials Chemistry and Physics 107 215
[15] Sun J, Wang H T, He J L, TianY J 2005 Phys. Rev. B 71 125132
[16] Yang Y T, Wu J, Cai Y R, Ding R X, Song J X, Shi L C 2008 Acta Phys. Sin. (in Chinese) 57 7151[杨银堂、武 军、蔡玉荣、丁瑞雪、宋久旭、石立春 2008 物理学报 57 7151]
[17] Kohan A F, Ceder G, Morgan D 2000 Phys. Rev. B 61 15019
[18] Liu E K, Zhu B S, Luo J S 2008 Physics of semiconductor (Beijing:Publishing House of Electronics Industry) p93 (in Chinese)[刘恩科、朱秉升、罗晋生 2008 半导体物理学(第七版)(北京:电子工业出版社)第93页]
[19] Noll J L 1964 Physics of Semiconductors(New York: McGraw-Hill) p198
[20] Conwell E 1959 J. Phys. Chem. Solids 8 234
[21] Shockley W 1951 Bell System Technical Journal 30 990
[22] Yu Q J, Fu W Y, Yu C L, Yang H B, Wei R H, Sui Y M, Liu S K, Liu Z L, Li M H, Wang G R, Shao C L, Liu Y C, Zou G T 2007 J.Phys.D: Appl.Phys. 40 5592
[23] Zhao H F, Cao Q X, Li J T 2008 Acta Phys. Sin. 57 5828(in Chinese)[赵慧芳、曹全喜、李建涛 2008 物理学报 57 5828]
[24] Shen X C 1992 The Optical Properties of Semiconductor(Beijing:SciencePress)p24—148 (in Chinese)[沈学础 1992 半导体光学性质(北京:科学出版社)第24—148页]
[25] Lan W, Liu Y P, Zhang M, Wang B, Yan H, Wang Y Y 2007 Materials Letters 61 2262
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