Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Semi-super junction SiGe high voltage fast and soft recovery switching diodes

Gao Yong Ma Li

Semi-super junction SiGe high voltage fast and soft recovery switching diodes

Gao Yong, Ma Li
PDF
Get Citation
Metrics
  • Abstract views:  3428
  • PDF Downloads:  1081
  • Cited By: 0
Publishing process
  • Received Date:  01 March 2008
  • Accepted Date:  25 April 2008
  • Published Online:  20 January 2009

Semi-super junction SiGe high voltage fast and soft recovery switching diodes

  • 1. (1)西安理工大学电子工程系,西安 710048; (2)西安理工大学应用物理系,西安 710048

Abstract: Semi-super junction (S-SJ) is developed on the basis of the super junction (SJ) structure by adding BAL (bottom assist layer) in the base region. One should only adjust the depth and the doping concentration of the BAL in the S-SJ structure to obtain higher working voltages. At the same on resistance, the aspect ratio of p-column in the S-SJ structure is less than that in the super junction structure, which means simpler process of epitaxial growth and ion implantation, which is very effective in reducing the process difficulty and the manufacture cost. Because the band gap of SiGe material can be adjusted by changing the Gefraction and the epilayers strain, the carrier mobility is increased with the increasing Ge content, the manufacture process is compatible with Si process, and great importance has been gradually attached to the SiGe material. To meet the requirements of low forward conducting voltage drop, high breakdown voltage, minimum reverse leakage current, and fast and soft reverse recovery process for power diodes in high frequency power electronics circuits, a S-SJ SiGe diode with remarkable improvement in all these characteristics of present power diode is proposed by combining both merits of S-SJ structure and SiGe material in this paper.

Catalog

    /

    返回文章
    返回