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N-type window layer and its application in high deposition rate microcrystalline silicon solar cells

Zhang Xiao-Dan Zhao Ying Sun Fu-He Wang Shi-Feng Han Xiao-Yan Wei Chang-Chun Sun Jian Geng Xin-Hua Xiong Shao-Zhen

N-type window layer and its application in high deposition rate microcrystalline silicon solar cells

Zhang Xiao-Dan, Zhao Ying, Sun Fu-He, Wang Shi-Feng, Han Xiao-Yan, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen
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  • Received Date:  01 October 2008
  • Accepted Date:  29 October 2008
  • Published Online:  20 July 2009

N-type window layer and its application in high deposition rate microcrystalline silicon solar cells

  • 1. 南开大学光电子薄膜器件与技术研究所,南开大学光电子薄膜器件与技术天津市重点实验室,光电信息技术科学教育部重点实验室(南开大学,天津大学),天津 300071

Abstract: N-type phosphors doping layer as the window layer of microcrystalline silicon solar cells has been fabricated using conversional radio frequency plasma enhanced chemical vapor deposition. Because of hole and electron mobilities are of the same order for microcrystalline silicon thin film, microcrystalline silicon solar cells based on n-type doping layer as the window layer almost show the same efficiency as microcrystalline silicon solar cells based on p-type doping layer as the window layer. In addition, the results of quantum efficiency are also consistent with the I-V measurement results. Bilateral Raman measurement results using laser light of different wavelength indicated that p/i or n/i interface incubation layer has a disadvantageous influence on the current density of the solar cells. Through the optimization of n/i interface incubation layer, glass/ZnO/n/i/p/Al microcrystalline silicon solar cell with 7.7% conversion efficiency has been fabricated.

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