Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Performance of SnO2:F/SnO2 composite film as front-electrode for CdTe solar cells

Zeng Guang-Gen Li Bing Zheng Jia-Gui Wu Li-Li Zhang Jing-Quan Lei Zhi Li Wei Feng Liang-Huan

Performance of SnO2:F/SnO2 composite film as front-electrode for CdTe solar cells

Zeng Guang-Gen, Li Bing, Zheng Jia-Gui, Wu Li-Li, Zhang Jing-Quan, Lei Zhi, Li Wei, Feng Liang-Huan
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  2777
  • PDF Downloads:  660
  • Cited By: 0
Publishing process
  • Received Date:  02 September 2009
  • Accepted Date:  30 November 2009
  • Published Online:  05 May 2010

Performance of SnO2:F/SnO2 composite film as front-electrode for CdTe solar cells

  • 1. Department of Materials Science, Sichuan University, Chengdu 610064, China

Abstract: Decreasing CdS thickness is one of the effective ways to improve the conversion efficiency of CdS/CdTe solar cells. In order to eliminate the adverse effects of the decrease in CdS thickness on the performances of the devices, it is necessary to introduce a buffer layer between CdS and front electrode layer. The un-doped SnO2thin films, as a buffer layer, were deposited on SnO2:F thin film by magnetic reactive sputtering. Then the composite film was annealed at 550 ℃ in N2/O2=4 ∶1 ambience for 30 minutes. The morphology, structure and optical properties of the composite film before and after annealing were studied by AFM, XRD, UV-Vis and the electrical properties were analyzed, respectively. As a result, the crystal lattice parameters of un-doped SnO2 films matched those of the substrate, so the un-doped SnO2 films, which had an obvious preferred orientation along (110) plan, had the same structure as the substrate materials. This implied that there was no lattice mismatch. After annealing, the surface topography and electricity uniformity were improved, higher than 80% transparency was obtained, and resistance increased to meet the requirements of the buffer layers. Finally, continuous and homogeneous SnO2:F/ SnO2 composite thin films have been obtained, which were very suitable for CdS/CdTe cells.

Reference (19)

Catalog

    /

    返回文章
    返回