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Preparation and measurement of far-infrared electroluminescence emitter based on quantum confined acceptors

Liu Jing Zheng Wei-Min Song Ying-Xin Chu Ning-Ning Li Su-Mei Cong Wei-Yan

Preparation and measurement of far-infrared electroluminescence emitter based on quantum confined acceptors

Liu Jing, Zheng Wei-Min, Song Ying-Xin, Chu Ning-Ning, Li Su-Mei, Cong Wei-Yan
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  • GaAs/AlAs triple-quantum-well samples were grown by molecular beam epitaxy, and the middle GaAs quantum-well layer was delta-doped at the well centre with Be shallow acceptors. Then the far-infrared Teraherz prototype emitter was fabricated using the samples. Electroluminescence (EL) and current-voltage characteristics (I-V) were measured at 4.5 K. In the EL spectrum, a wide peak was observed clear 222 cm-1, which is attributed to the Be acceptor’s radiative transitions from the excited odd-parity states to the ground state. Nevertheless, the emission signal was weakened by non-radiative relaxation processes. In the I-V curve, the negative differential resistance characteristic at the position of 0.72 and 1.86 V was also observed clearly. This is attributed to the resonant tunneling between Be acceptor 1s3/2(Γ6+Γ7) energy level in the middle quantum-well and the HH1 band in the left-side non-doping quantum-well, as well as the resonant tunneling between the HH band in the right-side non-doping quantum-well and Be acceptor 2p5/2(Γ6+Γ7) energy level.
    • Funds:
    [1]

    [1]Ma S H, Shi Y L, Xu X L, Yan W, Yang Y P, Wang L 2006 Acta Phys. Sin. 55 4091 (in Chinese) [马士华、施宇蕾、徐新龙、严伟、杨玉平、汪力 2006 物理学报 55 4091]

    [2]

    [2]Zhang X B, Shi W 2008 Acta Phys. Sin. 57 4984 (in Chinese) [张显斌、施卫 2008 物理学报 57 4984]

    [3]

    [3]Lafaye D G, Boucaud P, Julien F H, Prazeres R, Glotin F, Ortega J M, Thierry-Mieg V, Planel R 1997 Appl. Phys. Lett. 70 3197

    [4]

    [4]Muravjov A V, Withers S H, Pavlov S G, Shastin V N, Peale R E 1999 J. Appl. Phys. 86 3512

    [5]

    [5]Zhang T Y, Zhao W 2008 Chin. Phys. B 17 4285

    [6]

    [6]Xu G Y, Li A Z 2007 Acta Phys. Sin. 56 500 (in Chinese) [徐刚毅、李爱珍 2007 物理学报 56 500]

    [7]

    [7]Lin G J, Zhou Z W, Lai H K, Li C, Chen S Y, Yu J Z 2007 Acta Phys. Sin. 56 4137 (in Chinese) [林桂江、周志文、赖虹凯、李成、陈松岩、余金中 2007 物理学报 56 4137]

    [8]

    [8]Ting D Z, Chang Y C, Bandara S V, Gunapala S D 2007 Appl. Phys. Lett. 91 073510

    [9]

    [9]MujagiDc' E, Austerer M, Schartner S, Nobile M, Hoffmann L K, Schrenk W, Strasser G, Semtsiv M P, Bayrakli I, Wienold M, Masselink W T 2008 J. Appl. Phys. 103 033104

    [10]

    ]Williams B S, Callebaut H, Kumar S, Hu Q, Reno J L 2003 Appl. Phys. Lett. 82 1015

    [11]

    ]Harrison P, Halsall M P, Zheng W M 2002 Mater. Sci. Forum 384—385 165

    [12]

    ]Harrison P, Kelsall R W 1997 J. Appl. Phys. 81 7135

    [13]

    ]Halsall M P, Harrison P, Wells J P R, Bradley I V, Pellemans H 2001 Phys. Rev. B 63 155314

    [14]

    ]Zheng W M, Halsall M P, Harmer P, Harrison P, Steer M J 2002 J. Appl. Phys. 92 6039

    [15]

    ]Orlova E E, Harrison P, Zhang W M, Halsall M P 2005 Semiconductors 39 67

    [16]

    ]Zheng W M, Halsall M P, Harmer P, Harrison P, Steer M J 2004 Appl. Phys. Lett. 84 735

    [17]

    ]Seliuta D, ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite G, Grigelionis I, Balakauskas S, ValuDsˇis G, Sherliker B, Sherliker B, Halsall M P, Lachab M, Khanna S P, Harrison P, Linfieldc E H 2008 Acta Phys. Pol. A 113 909

    [18]

    ]Huber R, Kaindl R A, Schmid B A, Chemla D S 2005 Phys. Rev. B 72 161314

    [19]

    ]ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite· G, Seliuta D, ValuDsˇis G, Halsall M P, Steer M J, Harrison P 2005 J. Appl. Phys. 98 023508

    [20]

    ]ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite· G, Seliuta D, ASˇUirmulis E, Devenson J, ValuAsˇis G, Sherliker B, Halsall M P, Steer M J, Harrison P 2005 Acta Phys. Pol. A 107 328

    [21]

    ]Kundrotas J, ACˇUerDsˇkus A, ValuDsˇis G, Lachab M, Khanna S P, Harrison P, Linfield E H 2008 J. Appl. Phys. 103 123108

    [22]

    ]Holtz P O, Sundaram M, Doughty K, Merz J L, Gossard A C 1989 Phys. Rev. B 40 12338

    [23]

    ]Missous M 1995 J. Appl. Phys. 78 4467

    [24]

    ]Zheng W M, Halsall M P, Harrison P, Steer M J 2006 Sci. China Ser. G 49 702

    [25]

    ]Masselink W T, Chung C Y, Morkoc H 1985 Phys.Rev. B 32 5190

    [26]

    ]Zheng W M, Halsall M P, Harrison P, Wells J P R, Bradley I V, Steer M J 2003 Appl. Phys. Lett. 83 3719

    [27]

    ]Reeder A A, McCombe B D, Chambers F A, Devane G P 1988 Phys. Rev. B 38 4318

    [28]

    ]Xia J B, Huang K 1988 Acta Phys. Sin. 37 1 (in Chinese) [夏建白、黄昆 1988 物理学报 37 1]

  • [1]

    [1]Ma S H, Shi Y L, Xu X L, Yan W, Yang Y P, Wang L 2006 Acta Phys. Sin. 55 4091 (in Chinese) [马士华、施宇蕾、徐新龙、严伟、杨玉平、汪力 2006 物理学报 55 4091]

    [2]

    [2]Zhang X B, Shi W 2008 Acta Phys. Sin. 57 4984 (in Chinese) [张显斌、施卫 2008 物理学报 57 4984]

    [3]

    [3]Lafaye D G, Boucaud P, Julien F H, Prazeres R, Glotin F, Ortega J M, Thierry-Mieg V, Planel R 1997 Appl. Phys. Lett. 70 3197

    [4]

    [4]Muravjov A V, Withers S H, Pavlov S G, Shastin V N, Peale R E 1999 J. Appl. Phys. 86 3512

    [5]

    [5]Zhang T Y, Zhao W 2008 Chin. Phys. B 17 4285

    [6]

    [6]Xu G Y, Li A Z 2007 Acta Phys. Sin. 56 500 (in Chinese) [徐刚毅、李爱珍 2007 物理学报 56 500]

    [7]

    [7]Lin G J, Zhou Z W, Lai H K, Li C, Chen S Y, Yu J Z 2007 Acta Phys. Sin. 56 4137 (in Chinese) [林桂江、周志文、赖虹凯、李成、陈松岩、余金中 2007 物理学报 56 4137]

    [8]

    [8]Ting D Z, Chang Y C, Bandara S V, Gunapala S D 2007 Appl. Phys. Lett. 91 073510

    [9]

    [9]MujagiDc' E, Austerer M, Schartner S, Nobile M, Hoffmann L K, Schrenk W, Strasser G, Semtsiv M P, Bayrakli I, Wienold M, Masselink W T 2008 J. Appl. Phys. 103 033104

    [10]

    ]Williams B S, Callebaut H, Kumar S, Hu Q, Reno J L 2003 Appl. Phys. Lett. 82 1015

    [11]

    ]Harrison P, Halsall M P, Zheng W M 2002 Mater. Sci. Forum 384—385 165

    [12]

    ]Harrison P, Kelsall R W 1997 J. Appl. Phys. 81 7135

    [13]

    ]Halsall M P, Harrison P, Wells J P R, Bradley I V, Pellemans H 2001 Phys. Rev. B 63 155314

    [14]

    ]Zheng W M, Halsall M P, Harmer P, Harrison P, Steer M J 2002 J. Appl. Phys. 92 6039

    [15]

    ]Orlova E E, Harrison P, Zhang W M, Halsall M P 2005 Semiconductors 39 67

    [16]

    ]Zheng W M, Halsall M P, Harmer P, Harrison P, Steer M J 2004 Appl. Phys. Lett. 84 735

    [17]

    ]Seliuta D, ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite G, Grigelionis I, Balakauskas S, ValuDsˇis G, Sherliker B, Sherliker B, Halsall M P, Lachab M, Khanna S P, Harrison P, Linfieldc E H 2008 Acta Phys. Pol. A 113 909

    [18]

    ]Huber R, Kaindl R A, Schmid B A, Chemla D S 2005 Phys. Rev. B 72 161314

    [19]

    ]ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite· G, Seliuta D, ValuDsˇis G, Halsall M P, Steer M J, Harrison P 2005 J. Appl. Phys. 98 023508

    [20]

    ]ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite· G, Seliuta D, ASˇUirmulis E, Devenson J, ValuAsˇis G, Sherliker B, Halsall M P, Steer M J, Harrison P 2005 Acta Phys. Pol. A 107 328

    [21]

    ]Kundrotas J, ACˇUerDsˇkus A, ValuDsˇis G, Lachab M, Khanna S P, Harrison P, Linfield E H 2008 J. Appl. Phys. 103 123108

    [22]

    ]Holtz P O, Sundaram M, Doughty K, Merz J L, Gossard A C 1989 Phys. Rev. B 40 12338

    [23]

    ]Missous M 1995 J. Appl. Phys. 78 4467

    [24]

    ]Zheng W M, Halsall M P, Harrison P, Steer M J 2006 Sci. China Ser. G 49 702

    [25]

    ]Masselink W T, Chung C Y, Morkoc H 1985 Phys.Rev. B 32 5190

    [26]

    ]Zheng W M, Halsall M P, Harrison P, Wells J P R, Bradley I V, Steer M J 2003 Appl. Phys. Lett. 83 3719

    [27]

    ]Reeder A A, McCombe B D, Chambers F A, Devane G P 1988 Phys. Rev. B 38 4318

    [28]

    ]Xia J B, Huang K 1988 Acta Phys. Sin. 37 1 (in Chinese) [夏建白、黄昆 1988 物理学报 37 1]

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  • Received Date:  06 July 2009
  • Accepted Date:  06 August 2009
  • Published Online:  15 April 2010

Preparation and measurement of far-infrared electroluminescence emitter based on quantum confined acceptors

  • 1. 山东大学威海分校空间科学与物理学院,威海 264209

Abstract: GaAs/AlAs triple-quantum-well samples were grown by molecular beam epitaxy, and the middle GaAs quantum-well layer was delta-doped at the well centre with Be shallow acceptors. Then the far-infrared Teraherz prototype emitter was fabricated using the samples. Electroluminescence (EL) and current-voltage characteristics (I-V) were measured at 4.5 K. In the EL spectrum, a wide peak was observed clear 222 cm-1, which is attributed to the Be acceptor’s radiative transitions from the excited odd-parity states to the ground state. Nevertheless, the emission signal was weakened by non-radiative relaxation processes. In the I-V curve, the negative differential resistance characteristic at the position of 0.72 and 1.86 V was also observed clearly. This is attributed to the resonant tunneling between Be acceptor 1s3/2(Γ6+Γ7) energy level in the middle quantum-well and the HH1 band in the left-side non-doping quantum-well, as well as the resonant tunneling between the HH band in the right-side non-doping quantum-well and Be acceptor 2p5/2(Γ6+Γ7) energy level.

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