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INFRARED ABSORPTION OF OXYGEN IN SILICON AND GERMANIUM AT LOW TEMPERATURES

Xu Zhen-jia Chen Yu-zhang Jiang De-sheng Song Chun-ying Li He-cheng Song Xiang-fang Ye Yi-ying

INFRARED ABSORPTION OF OXYGEN IN SILICON AND GERMANIUM AT LOW TEMPERATURES

Xu Zhen-jia, Chen Yu-zhang, Jiang De-sheng, Song Chun-ying, Li He-cheng, Song Xiang-fang, Ye Yi-ying
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  • Received Date:  03 September 1979
  • Published Online:  29 July 2005

INFRARED ABSORPTION OF OXYGEN IN SILICON AND GERMANIUM AT LOW TEMPERATURES

  • 1. (1)武汉大学物理系; (2)冶金工业部有色金属研究院; (3)中国科学院半导体研究所

Abstract: Infrared Absorption measurements of oxygen in silicon and germanium were made with IE Fourier Transform Spectrometer at temperatures between 6 K and 300 K in the region of 400-4000cm-1. Resolution was up to 0.5cm-1 when high resolution conditions were adopted.Detection limit and sources of error on oxygen concentration of silicon and germanium determined by infrared absorption measurement at low temperature were identified. Using a 2 cm thick sample, the- lower limit of detectability for oxygen at 20 K is estimated to be 9.6×1014 oxygen atom. cm-3 and 3.0×1014 oxygen atom. cm-3 in silicon and germanium respectively. The oxygen concentration of CZ germanium single crystals with different growth conditions was also studied and these results determined by IE measurements havebeen investigated and discussed at temper-lithium precipitation technique.Temperature-dependent fine structure of 1106 cm-3 absorption band of silicon with different oxygen concentration have been investigated and discussed at temper atures between 6 K and 300 K.

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