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Influence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collection

Chen Jian-Jun Chen Shu-Ming Liang Bin Liu Bi-Wei Chi Ya-Qing Qin Jun-Rui He Yi-Bai

Influence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collection

Chen Jian-Jun, Chen Shu-Ming, Liang Bin, Liu Bi-Wei, Chi Ya-Qing, Qin Jun-Rui, He Yi-Bai
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  • Received Date:  03 September 2010
  • Accepted Date:  29 March 2011
  • Published Online:  05 April 2011

Influence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collection

  • 1. School of Computer Science, National University of Defense Technology, Changsha 410073, China

Abstract: Due to negative bias temperature instability and hot carrier injection, p-type metal-oxide-semiconductor field effect transistor (MOSFET) will degrade with time, and the accumulation of interface traps is one major reason for the degradation. In this paper, the influence of the accumulation of pMOSFET interface traps on single event charge sharing collection between two adjacent pMOSFET is studied based on three-dimensional numerical simulations on a 130 nm bulk silicon complementary metal-oxide-semiconductor process, the results show that with the accumulated interface traps increasing, the charge sharing collection reducs for both the two pMOSFETs. The influence of the accumulation of pMOSFET interface traps on single event charge sharing induced multiple transient pulses between two adjacent inverters is also studied, the results show that the multiple transient pulses induced by the two pMOSFET charge sharings will be compressed, while multiple transient pulses induced by the two nMOSFET charge sharing will be broadened.

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