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应用负偏置温度不稳定性(negative bias temperature instability, NBTI), 退化氢分子的漂移扩散模型, 与器件二维数值模拟软件结合在一起进行计算, 并利用已有的实验数据和基本器件物理和规律, 分析直流应力NBTI效应随器件沟道长度、栅氧层厚度和掺杂浓度等基本参数的变化规律, 是研究NBTI可靠性问题发生和发展机理变化的一种有效方法. 分析结果显示, NBTI效应不受器件沟道长度变化的影响, 而主要受到栅氧化层厚度变化的影响; 栅氧化层厚度的减薄和栅氧化层电场增强的影响是一致的, 决定了器件退化按指数规律变化; 当沟道掺杂浓度提高, NBTI效应将减弱, 这是因为器件沟道表面空穴浓度降低引起的; 然而当掺杂浓度提高到器件的源漏泄漏电流很小时(小泄露电流器件), NBTI效应有明显的增强. 这些结论对认识NBTI效应的发展规律以及对高性能器件的设计具有重要的指导意义.
[1] Schroder D K, Babcock J A 2003 J. Appl. Phys. 94 1
[2] Mahapatra S, Alam M A, Bharath P 2005 Microelectr. Eng. 80 114
[3] Huard V, Denais M, Parthasarathy C 2006 Microelectr. Reliab. 46 1
[4] Alam M A, Kufluoglu H, Varghese D, Mahapatra S 2007 Microelectr. Reliab. 47 853
[5] Mahapatra S, Islam A E, Deora S, Maheta V D, Joshi K, Jain A, Alam M A 2011 Proceedings of IEEE International Reliability Physics Symposium United States, April 10-14, 2011 p6A.3.1
[6] Kumar S V, Kim C H, Sapatnekar S S 2009 IEEE Trans. Dev. Mater. Rel. 9 537
[7] Alam M A, Mahapatra S 2005 Microelectr. Reliab. 45 71
[8] Kufluoglu H, Alam M A 2007 IEEE Trans. Electron Dev. 54 1101
[9] Kufluoglu H, Alam M A 2006 IEEE Trans. Electron. Dev. 53 1120
[10] Hao Y, Liu H X 2008 Reliability and Effecticenese Mechanism in Micro Manometer MOS Device (Beijing: Science Press) pp265, 230, 232 (in Chinese) [郝跃, 刘红霞 2008 微纳米MOS器件可靠性与实效机理 (北京: 科学出版社) 第265, 230, 232页]
[11] Bénard C, Math G, Fornara P, Ogier J, Goguenheim D 2009 Microelectr. Reliab. 49 1008
[12] Islam A E, Kufluoglu H, Varghese D, Mahapatra S, Alam M A 2007 IEEE Trans. Electron Dev. 54 2143
[13] Krishnan A T, Chancellor C, Chakravarthi S, Nicollian P E, Reddy V, Varghese A, Khamankar R B, Krishnan S, Levitov L 2005 Proceedings of International Electron Devices Meeting United States, December 5-7, 2005 p688
[14] Grasser T, Entner R, Triebl O, Enichlmair H, Minixhofer R 2006 International Conference on Simulation of Semiconductor Processes and Devices United States, September 5-7 2006 p330
[15] Chuang C T 2009 Proceedings of IEEE International Symposium on Circuit and Systems Taiwan, China, May 24-27 2009 p2305
[16] Reisinger H, Blank O, Heinrigs W, Muhlhoff A, Gustin W, Schlunder C 2006 Proceedings of IEEE International Reliability Physics Symposium United States, March 26-30, 2006 p448
[17] Stathis J H, Zafar S 2006 Microelectr. Reliab. 46 270
[18] Liu H X, Hao Y 2007 Chin. Phys. 16 2111
-
[1] Schroder D K, Babcock J A 2003 J. Appl. Phys. 94 1
[2] Mahapatra S, Alam M A, Bharath P 2005 Microelectr. Eng. 80 114
[3] Huard V, Denais M, Parthasarathy C 2006 Microelectr. Reliab. 46 1
[4] Alam M A, Kufluoglu H, Varghese D, Mahapatra S 2007 Microelectr. Reliab. 47 853
[5] Mahapatra S, Islam A E, Deora S, Maheta V D, Joshi K, Jain A, Alam M A 2011 Proceedings of IEEE International Reliability Physics Symposium United States, April 10-14, 2011 p6A.3.1
[6] Kumar S V, Kim C H, Sapatnekar S S 2009 IEEE Trans. Dev. Mater. Rel. 9 537
[7] Alam M A, Mahapatra S 2005 Microelectr. Reliab. 45 71
[8] Kufluoglu H, Alam M A 2007 IEEE Trans. Electron Dev. 54 1101
[9] Kufluoglu H, Alam M A 2006 IEEE Trans. Electron. Dev. 53 1120
[10] Hao Y, Liu H X 2008 Reliability and Effecticenese Mechanism in Micro Manometer MOS Device (Beijing: Science Press) pp265, 230, 232 (in Chinese) [郝跃, 刘红霞 2008 微纳米MOS器件可靠性与实效机理 (北京: 科学出版社) 第265, 230, 232页]
[11] Bénard C, Math G, Fornara P, Ogier J, Goguenheim D 2009 Microelectr. Reliab. 49 1008
[12] Islam A E, Kufluoglu H, Varghese D, Mahapatra S, Alam M A 2007 IEEE Trans. Electron Dev. 54 2143
[13] Krishnan A T, Chancellor C, Chakravarthi S, Nicollian P E, Reddy V, Varghese A, Khamankar R B, Krishnan S, Levitov L 2005 Proceedings of International Electron Devices Meeting United States, December 5-7, 2005 p688
[14] Grasser T, Entner R, Triebl O, Enichlmair H, Minixhofer R 2006 International Conference on Simulation of Semiconductor Processes and Devices United States, September 5-7 2006 p330
[15] Chuang C T 2009 Proceedings of IEEE International Symposium on Circuit and Systems Taiwan, China, May 24-27 2009 p2305
[16] Reisinger H, Blank O, Heinrigs W, Muhlhoff A, Gustin W, Schlunder C 2006 Proceedings of IEEE International Reliability Physics Symposium United States, March 26-30, 2006 p448
[17] Stathis J H, Zafar S 2006 Microelectr. Reliab. 46 270
[18] Liu H X, Hao Y 2007 Chin. Phys. 16 2111
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