pMOS器件直流应力负偏置温度不稳定性效应随器件基本参数变化的分析

曹建民; 贺威; 黄思文; 张旭琳

doi:10.7498/aps.61.217305

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摘要

应用负偏置温度不稳定性(negative bias temperature instability, NBTI), 退化氢分子的漂移扩散模型, 与器件二维数值模拟软件结合在一起进行计算, 并利用已有的实验数据和基本器件物理和规律, 分析直流应力NBTI效应随器件沟道长度、栅氧层厚度和掺杂浓度等基本参数的变化规律, 是研究NBTI可靠性问题发生和发展机理变化的一种有效方法. 分析结果显示, NBTI效应不受器件沟道长度变化的影响, 而主要受到栅氧化层厚度变化的影响; 栅氧化层厚度的减薄和栅氧化层电场增强的影响是一致的, 决定了器件退化按指数规律变化; 当沟道掺杂浓度提高, NBTI效应将减弱, 这是因为器件沟道表面空穴浓度降低引起的; 然而当掺杂浓度提高到器件的源漏泄漏电流很小时(小泄露电流器件), NBTI效应有明显的增强. 这些结论对认识NBTI效应的发展规律以及对高性能器件的设计具有重要的指导意义.

关键词:

作者及机构信息

1.
深圳大学电子科学与技术学院, 深圳 518060

基金项目: 国家自然科学基金青年科学基金(批准号: 11109052)、深圳市基础研究计划(批准号: JC201005280558A, JC201005280565A)资助的课题.

参考文献

[1]	Schroder D K, Babcock J A 2003 J. Appl. Phys. 94 1
[2]	Mahapatra S, Alam M A, Bharath P 2005 Microelectr. Eng. 80 114
[3]	Huard V, Denais M, Parthasarathy C 2006 Microelectr. Reliab. 46 1
[4]	Alam M A, Kufluoglu H, Varghese D, Mahapatra S 2007 Microelectr. Reliab. 47 853
[5]	Mahapatra S, Islam A E, Deora S, Maheta V D, Joshi K, Jain A, Alam M A 2011 Proceedings of IEEE International Reliability Physics Symposium United States, April 10-14, 2011 p6A.3.1
[6]	Kumar S V, Kim C H, Sapatnekar S S 2009 IEEE Trans. Dev. Mater. Rel. 9 537
[7]	Alam M A, Mahapatra S 2005 Microelectr. Reliab. 45 71
[8]	Kufluoglu H, Alam M A 2007 IEEE Trans. Electron Dev. 54 1101
[9]	Kufluoglu H, Alam M A 2006 IEEE Trans. Electron. Dev. 53 1120
[10]	Hao Y, Liu H X 2008 Reliability and Effecticenese Mechanism in Micro Manometer MOS Device (Beijing: Science Press) pp265, 230, 232 (in Chinese) [郝跃, 刘红霞 2008 微纳米MOS器件可靠性与实效机理 (北京: 科学出版社) 第265, 230, 232页]
[11]	Bénard C, Math G, Fornara P, Ogier J, Goguenheim D 2009 Microelectr. Reliab. 49 1008
[12]	Islam A E, Kufluoglu H, Varghese D, Mahapatra S, Alam M A 2007 IEEE Trans. Electron Dev. 54 2143
[13]	Krishnan A T, Chancellor C, Chakravarthi S, Nicollian P E, Reddy V, Varghese A, Khamankar R B, Krishnan S, Levitov L 2005 Proceedings of International Electron Devices Meeting United States, December 5-7, 2005 p688
[14]	Grasser T, Entner R, Triebl O, Enichlmair H, Minixhofer R 2006 International Conference on Simulation of Semiconductor Processes and Devices United States, September 5-7 2006 p330
[15]	Chuang C T 2009 Proceedings of IEEE International Symposium on Circuit and Systems Taiwan, China, May 24-27 2009 p2305
[16]	Reisinger H, Blank O, Heinrigs W, Muhlhoff A, Gustin W, Schlunder C 2006 Proceedings of IEEE International Reliability Physics Symposium United States, March 26-30, 2006 p448
[17]	Stathis J H, Zafar S 2006 Microelectr. Reliab. 46 270
[18]	Liu H X, Hao Y 2007 Chin. Phys. 16 2111

施引文献

[1]	Schroder D K, Babcock J A 2003 J. Appl. Phys. 94 1
[2]	Mahapatra S, Alam M A, Bharath P 2005 Microelectr. Eng. 80 114
[3]	Huard V, Denais M, Parthasarathy C 2006 Microelectr. Reliab. 46 1
[4]	Alam M A, Kufluoglu H, Varghese D, Mahapatra S 2007 Microelectr. Reliab. 47 853
[5]	Mahapatra S, Islam A E, Deora S, Maheta V D, Joshi K, Jain A, Alam M A 2011 Proceedings of IEEE International Reliability Physics Symposium United States, April 10-14, 2011 p6A.3.1
[6]	Kumar S V, Kim C H, Sapatnekar S S 2009 IEEE Trans. Dev. Mater. Rel. 9 537
[7]	Alam M A, Mahapatra S 2005 Microelectr. Reliab. 45 71
[8]	Kufluoglu H, Alam M A 2007 IEEE Trans. Electron Dev. 54 1101
[9]	Kufluoglu H, Alam M A 2006 IEEE Trans. Electron. Dev. 53 1120
[10]	Hao Y, Liu H X 2008 Reliability and Effecticenese Mechanism in Micro Manometer MOS Device (Beijing: Science Press) pp265, 230, 232 (in Chinese) [郝跃, 刘红霞 2008 微纳米MOS器件可靠性与实效机理 (北京: 科学出版社) 第265, 230, 232页]
[11]	Bénard C, Math G, Fornara P, Ogier J, Goguenheim D 2009 Microelectr. Reliab. 49 1008
[12]	Islam A E, Kufluoglu H, Varghese D, Mahapatra S, Alam M A 2007 IEEE Trans. Electron Dev. 54 2143
[13]	Krishnan A T, Chancellor C, Chakravarthi S, Nicollian P E, Reddy V, Varghese A, Khamankar R B, Krishnan S, Levitov L 2005 Proceedings of International Electron Devices Meeting United States, December 5-7, 2005 p688
[14]	Grasser T, Entner R, Triebl O, Enichlmair H, Minixhofer R 2006 International Conference on Simulation of Semiconductor Processes and Devices United States, September 5-7 2006 p330
[15]	Chuang C T 2009 Proceedings of IEEE International Symposium on Circuit and Systems Taiwan, China, May 24-27 2009 p2305
[16]	Reisinger H, Blank O, Heinrigs W, Muhlhoff A, Gustin W, Schlunder C 2006 Proceedings of IEEE International Reliability Physics Symposium United States, March 26-30, 2006 p448
[17]	Stathis J H, Zafar S 2006 Microelectr. Reliab. 46 270
[18]	Liu H X, Hao Y 2007 Chin. Phys. 16 2111

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pMOS器件直流应力负偏置温度不稳定性效应随器件基本参数变化的分析

1. 深圳大学电子科学与技术学院, 深圳 518060

基金项目:

国家自然科学基金青年科学基金(批准号: 11109052)、深圳市基础研究计划(批准号: JC201005280558A, JC201005280565A)资助的课题.

收稿日期: 2012-03-30

修回日期: 2012-05-23

刊出日期: 2012-11-05

摘要: 应用负偏置温度不稳定性(negative bias temperature instability, NBTI), 退化氢分子的漂移扩散模型, 与器件二维数值模拟软件结合在一起进行计算, 并利用已有的实验数据和基本器件物理和规律, 分析直流应力NBTI效应随器件沟道长度、栅氧层厚度和掺杂浓度等基本参数的变化规律, 是研究NBTI可靠性问题发生和发展机理变化的一种有效方法. 分析结果显示, NBTI效应不受器件沟道长度变化的影响, 而主要受到栅氧化层厚度变化的影响; 栅氧化层厚度的减薄和栅氧化层电场增强的影响是一致的, 决定了器件退化按指数规律变化; 当沟道掺杂浓度提高, NBTI效应将减弱, 这是因为器件沟道表面空穴浓度降低引起的; 然而当掺杂浓度提高到器件的源漏泄漏电流很小时(小泄露电流器件), NBTI效应有明显的增强. 这些结论对认识NBTI效应的发展规律以及对高性能器件的设计具有重要的指导意义.

关键词:

Dependence of the DC stress negative bias temperature instability effect on basic device parameters in pMOSFET

1.
College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, China.

Fund Project:

Project supported by Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11109052), and Shenzhen Science and Technology Development Funds, China (Grant Nos. JC201005280558A, JC201005280565A).

Received Date: 30 March 2012

Accepted Date: 23 May 2012

Published Online: 05 November 2012

Abstract: To analyze the dependence of the DC stress negative bias temperature instability (NBTI) effect on basic device paraments, such as the channel length, the gate oxide thickness, the doping concentration, we solve the hydrogen molecule drift-diffusion model of NBTI together with the semiconductor device equations. The results are compared with the existing experimental data and the basic laws and physics of devices, which is necessary for reliability studies of NBTI. The analysis results show that NBTI effect is not affected by the channel length change, but maily by the thickness of the gate oxide layer. Gate oxide thickness thinning and gate oxide layer electric field enhancement effect are consistent, which determines the device degradation in the manner of exponential law. With channel doping concentration increasing, NBTI effect will be reduced, which is because the device channel surface hole concentration is reduced, however with the doping concentration increases to such a value that the device source drain leakage current is very low (low leakage device), the MBTI effect is obviously enhanced. These are helpful for understanding NBTI and designing the high performance device.

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