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Molecular dynamics simulations of energy effectson atorn F interaction with SiC(100)

Lü Xiao-Dan Ning Jian-Ping Qing You-Min He Ping-Ni Zhao Cheng-Li Gou Fu-Jun

Molecular dynamics simulations of energy effectson atorn F interaction with SiC(100)

Lü Xiao-Dan, Ning Jian-Ping, Qing You-Min, He Ping-Ni, Zhao Cheng-Li, Gou Fu-Jun
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  • Received Date:  17 August 2010
  • Accepted Date:  26 December 2010
  • Published Online:  15 September 2011

Molecular dynamics simulations of energy effectson atorn F interaction with SiC(100)

  • 1. (1)Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China; (2)Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China;science College of Guizhou University, Guiyang 550025, China; (3)Key Laboratory for Radiation Physics and Technology Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University,Chengdu 610064, China;FOM Institute for Plasma Physics, 3439 MN Nieuwegein, Netherlands

Abstract: In this study, molecular dynamics simulations are used to investigate atom F interacting with SiC at 300 K. Simulation results show that with the saturation of the deposition of F atoms on the surface, the compositions (SiFx and CFx groups (x4 is dominant. And the main etching mechanism of Si atoms is chemical etching.

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