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ON THE MODEL OF THE RAPID INITIAL OXIDATION

LU YU-ZENG ZHENG YAO-ZONG

ON THE MODEL OF THE RAPID INITIAL OXIDATION

LU YU-ZENG, ZHENG YAO-ZONG
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(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

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  • Received Date:  09 May 1988
  • Published Online:  08 July 2005

ON THE MODEL OF THE RAPID INITIAL OXIDATION

  • 1. (1)成都电讯工程学院; (2)香港大学

Abstract: The basic assumptions of a recent model of the rapid initial oxidation of silicon put for-wara by Schafer and Lyon are examined. It is found that some of their hypothesis is inconsistent with existing experimental data. Instead, our previous model on initial oxidation can be used to explain the experimental data satisfactorily. The charge density at the interface and the equilibrium concentration of oxygen in the oxide are estimated based on this model, they agree well with measured results. These comparisons suggest that our previous model of oxidation give an overall satisfactory picture of the rapid initial thermal oxidation process of silicon.

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