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利用脉冲紫外线辅助热退火在200 ℃的低温条件下, 5 min内制备了基于溶液工艺的氧化铟薄膜及薄膜晶体管. 对比传统热退火, 研究了脉冲紫外线辅助热退火对氧化铟薄膜的表面形态、化学结构和电学特性的影响. 实验结果表明, 脉冲紫外线辅助热退火方式能够在短时间内实现改善氧化铟薄膜的质量及薄膜晶体管的性能. 原子力显微镜和场发射扫描电子显微镜结果显示该薄膜表面较传统热退火制备薄膜表面更为致密平坦. X 射线光电能谱测试表明, 脉冲紫外线辅助热退火处理后会产生氧空位, 从而提高载流子浓度, 改善了氧化铟薄膜的导电性. 此外, 对比研究了紫外线辅助热退火对氧化铟薄膜晶体管电气性能的影响. 结果表明器件的电学特性得到了明显改善, 亚阈值摆幅降低至0.12 mV/dec, 阈值电压为7.4 V, 电流开关比高达1.29×107, 场效应迁移率提升至1.27 cm2/(V·s). 因此, 脉冲紫外线辅助热退火是一种简单、快速的退火方式, 即使在低温条件下也能快速提高氧化铟薄膜和薄膜晶体管的性能.
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关键词:
- 脉冲紫外线辅助热退火 /
- 氧化铟 /
- 溶液法 /
- 薄膜晶体管
Indium oxide (In2O3) thin films and thin-film transistors (TFTs) based on the solution process are prepared by pulsed UV-assisted thermal annealing at a low temperature (200 ℃) for 5 min. The effects of pulsed UV-assisted thermal annealing on the surface morphology, chemical structure, and electrical properties of the In2O3 thin films are investigated, and they are compared with those of conventional thermal annealing (300 ℃, 30 min). The experimental results show that the pulsed UV-assisted thermal annealing method can improve the quality of In2O3 thin film and the performance of TFT in a short period. The results of atomic force microscopy and field emission scanning electron microscopy show that the surface of the In2O3 film is denser and flatter than that of the conventional thermally annealed film, and X-ray photoelectron spectroscopy tests show that the pulsed UV-assisted thermal annealing process generates oxygen vacancies, which increases the carrier concentration and improves the electrical conductivity of the In2O3 film. In addition, the effect of pulsed UV-assisted thermal annealing on the electrical characteristics of In2O3 TFTs is investigated in a comparative way. The results show that the electrical characteristics of the device are significantly improved: the subthreshold swing decreases to 0.12 mV/dec, the threshold voltage is 7.4 V, the current switching ratio is as high as 1.29×107, and the field effect mobility is enhanced to 1.27 cm2·V–1·s–1. Therefore, pulsed UV-assisted thermal annealing is a simple and fast annealing method, which can rapidly improve the performances of In2O3 thin film and TFTs, even under low-temperature conditions.-
Keywords:
- pulsed UV-assisted thermal annealing /
- indium oxide /
- solution process /
- thin film transistor
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图 1 (a) In2O3 TFT的结构示意图; (b) 脉冲紫外线辅助热退火工艺的原理示意图
Fig. 1. Schematic diagram of (a) structure of the prepared In2O3 TFT; (b) principle of the pulsed UV-assisted T.A.
图 3 硅板、样品1(传统热退火方式)和样品2(脉冲紫外线辅助热退火方式)的XRD图谱
Fig. 3. XRD patterns of Si substrate, sample 1 (T.A.) and sample 2 (pulsed UV+T.A.).
图 4 In2O3薄膜的AFM图像 (a) 样品1 (传统热退火方式); (b) 样品2 (脉冲紫外线辅助热退火方式)
Fig. 4. AFM images of In2O3 thin films: (a) Sample 1 (T.A.); (b) Sample 2 (pulsed UV+T.A.).
图 5 In2O3薄膜的FESEM图像 (a) 样品1 (传统热退火方式); (b) 样品2 (脉冲紫外线辅助热退火方式)
Fig. 5. FESEM images of In2O3 thin films: (a) Sample 1 (T.A.); (b) Sample 2 (pulsed UV+T.A.).
图 6 样品1(传统热退火方式)和样品2(脉冲紫外线辅助热退火方式)的In 3d XPS图谱
Fig. 6. In 3d XPS spectra of Sample 1 (T.A.) and Sample 2 (pulsed UV+T.A.).
图 7 In2O3薄膜O 1s的拟合XPS图谱 (a)样品1 (传统热退火方式); (b)样品2 (脉冲紫外线辅助热退火方式)
Fig. 7. O 1s high resolution XPS spectra of In2O3 thin film: (a) Sample 1 (T.A.); (b) Sample 2 (pulsed UV+T.A.).
图 8 脉冲紫外线辅助热退火促使In2O3薄膜内部氧空位生成机理
Fig. 8. Pulsed UV-assisted thermal annealing promotes the mechanism of oxygen vacancy generation inside In2O3 thin films.
图 9 不同退火方式所制备In2O3薄膜的电气特性变化
Fig. 9. Variation of electrical properties of In2O3 thin films prepared by different annealing methods.
图 10 不同退火方式所制备样品的(a)输出特性和(b)转移特性
Fig. 10. (a) Output and (b) transfer characteristics of samples prepared by different annealing methods.
表 1 不同热退火方式制备In2O3 TFTs的电学特性参数
Table 1. Electrical parameters of In2O3 TFTs prepared by different thermal annealing methods.
样品 亚阈值摆幅 电流比 阈值电压 迁移率 S.S./(mV·dec–1) Ion/Ioff VTH/V μsat/(cm2·V–1·s–1) 样品1(T.A.) 0.17 1.88×106 7.6 0.22 样品2(Pulsed UV +T.A.-5 min) 0.12 1.29×107 7.4 1.27 样品3(Pulsed UV +T.A.-10 min) — -2.52 2.43 
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