Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

The influence of channel length on total ionizing dose effect in deep submicron technologies

Hu Zhi-Yuan Liu Zhang-Li Shao Hua Zhang Zheng-Xuan Ning Bing-Xu Bi Da-Wei Chen Ming Zou Shi-Chang

The influence of channel length on total ionizing dose effect in deep submicron technologies

Hu Zhi-Yuan, Liu Zhang-Li, Shao Hua, Zhang Zheng-Xuan, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang
PDF
Get Citation
Metrics
  • Abstract views:  1430
  • PDF Downloads:  461
  • Cited By: 0
Publishing process
  • Received Date:  12 March 2011
  • Accepted Date:  04 July 2011
  • Published Online:  05 March 2012

The influence of channel length on total ionizing dose effect in deep submicron technologies

  • 1. The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, the ChineseAcademy of Sciences, Shanghai 200050, China;
  • 2. Graduate University of the Chinese Academy of Sciences, Beijing 100039, China

Abstract: The influence of channel length on total ionizing dose effect in a 180 nm complementary metal-oxide semiconductor technology is studied. When other conditions such as radiation bias, device structure are the same, the overall radiation response is determined by the charges trapped in the oxide. The off-state leakage due to the charges trapped in the shallow trench isolation oxide inverting the parasitic sidewall channel has correlation with the channel length. A shorter channel leads to a larger leakage current. For the first time, we report that the leakage current also exhibits the radiation enhanced channel-length modulation effect, which further degrades the device performance.

Reference (11)

Catalog

    /

    返回文章
    返回