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Terahertz broadband antireflection photonic device with graded refractive indices

Chen Yu-Ting-Wu Han Peng-Yu Kuo Mei-Ling Lin Shawn-Yu Zhang Xi-Cheng

Terahertz broadband antireflection photonic device with graded refractive indices

Chen Yu-Ting-Wu, Han Peng-Yu, Kuo Mei-Ling, Lin Shawn-Yu, Zhang Xi-Cheng
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  • Received Date:  29 June 2011
  • Accepted Date:  28 April 2012
  • Published Online:  20 April 2012

Terahertz broadband antireflection photonic device with graded refractive indices

  • 1. Center for Terahertz Research, Rensselaer Polytechnic Institute, Troy 12180, USA;
  • 2. Physics Department, Rensselaer Polytechnic Institute, Troy 12180, USA
Fund Project:  Project supported by the National Science Foundation of United States (Grant No. 0333314) and the United States Department of Energy Service (Grant No. DE-FG02-06ER46347).

Abstract: High resistivity silicon is a very common optical component in a terahertz system. However, its high relative refractive index of 3.42 causes a large impedance mismatch at the silicon-to-air interface. This severely reduces the available power in a terahertz system which motivates researchers to find a good anti-reflection solution. In the terahertz region, the lack of proper materials for broadband anti-reflection severely hinders such a research development. A photonic grating with graded refractive indices is demonstrated on silicon. Compared wich the case of planar silicon wafer, the transmission is observed to increase from 0.2 THz to over 7.3 THz for a device with 15 m period, which covers most of the terahertz band. With a striking relative 3 dB bandwidth of 116.3%, the device is polarization-independent and can be used under a wide incidence angle.

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