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Enhancing photovoltaic effect of Co2-C98/Al2O3/Si heterostructures by Al2O3

Zhang Xin Zhang Xiao-Zhong Tan Xin-Yu Yu Yi Wan Cai-Hua

Enhancing photovoltaic effect of Co2-C98/Al2O3/Si heterostructures by Al2O3

Zhang Xin, Zhang Xiao-Zhong, Tan Xin-Yu, Yu Yi, Wan Cai-Hua
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  • As energy crisis is aggravated, solar cell, as a common form of the development and utilization of solar energy, has attracted more and more attention all over the world. With solar cells developing towards the direction of high efficiency, thin film, non-toxic and rich raw materials, the pure silicon solar cell could not meet these requirements, so the new material and process are imminently required. This paper deals with the photovoltaic effect of the carbon material based on the silicon heterostructure, and its possible application to solar cells. Co2-C98/Al2O3/Si heterostructure with a 4 nm-thick Al2O3 layer shows the best photovoltaic effect performance with a short-current density of 18.75 mA/cm2, an open-circuit voltage of 0.447 V and a power conversion efficiency of 3.27% with AM1.5 illumination, which is much better than Co2-C98/Si heterostructure without the Al2O3 layer. The effect of Al2O3 layer is attributed to the reduction of the interface defects, the suppression of the surface recombination and the enhancement of barrier height, which are proved by the capacitance-voltage and current-voltage measurements under dark condition. This work may shed light on the carbon/silicon based solar cells.
    • Funds: Project supported by the Key Program of Jointed Funds of National Natural Science Foundation of China-Guangdong Province, China (Grant No. U0734001), the National Natural Science Foundation of China (Grant No. 50772054), and the National Basic Research Program of China (Grant No. 2009CB929202).
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    [4]

    Zhu H W, Wei J Q, Wang K L, Wu D H 2009 Sol. Energy Mater. Sol. Cells 93 1461

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    Hao H Y, Kong G L, Zeng X B, Xu Y, Diao H W, Liao X B 2005 Acta Phys. Sin. 54 3327 (in Chinese) [郝会颖, 孔光临, 曾湘波, 许颖, 刁宏伟, 廖显伯 2005 物理学报 54 3327]

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    Zhang W Y, Wu X P, Sun L J, Lin B X, Fu Z X 2008 Acta Phys. Sin. 57 4471 (in Chinese) [张伟英, 邬小鹏, 孙利杰, 林碧霞, 傅竹西 2008 物理学报 57 4471]

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    Li Z R, Saini V, Dervishi E, Xu Y, Mahmood M, Biris A R, Biris A S 2009 Nanotech. Confer. Expo. 1 53

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    Ma Z H, Cao Q, Zuo Y H, Zheng J, Xue C L, Cheng B W, Wang Q M 2010 Chin. Phys. B 20 106104

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    Yu W, Wang C S, Lu W B, He J, Han X X, Fu G S 2007 Chin. Phys. 16 2310

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    Freitag M, Martin Y, Misewich J A 2003 Nano Lett. 3 1067

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    Balasubramanian K, Fan Y W, Burghard M 2004 Appl. Phys. Lett. 84 2400

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    Lee J U 2005 Appl. Phys. Lett. 87 073101

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    Gabor M, Zhong Z H, Bosnick K, Park J W, McEuen P L 2009 Science 325 1367

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    Kymakis E, Amaratunga G A J 2002 Appl. Phys. Lett. 80 112

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    Kymakis E, Alexandrou I, Amaratunga G A J 2003 J. Appl. Phys. 93 1764

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    Wang N N, Yu J S, Zang Y, Jiang Y D 2010 Chin. Phys. B 19 038602

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    Jin Y, Curry R J, Sloan J, Hatton R A, Chong L C, Blanchard N, Stolojan V, Kroto H W, Silva S R P 2006 J. Mater. Chem. 16 3715

    [20]

    Somani P R, Somani S P, Umeno M 2008 Carbon Sci. Technol. 1 1

    [21]

    Wang X, Zhi L J, Mullen K 2008 Nano Lett. 8 323

    [22]

    Zhou S Y, Gweon G H, Fedorov A V, First P N, de Heer W A, Lee D H, Guinea F, Castro Neto A H, Lanzara A 2007 Nature Mater. 6 770

    [23]

    Yu H A, Kaneko Y, Yoshimura S, Otani S, Yoshimura 1996 Appl. Phys. Lett. 68 547

    [24]

    Ma M, Xue Q Z, Chen H J, Zhou X Y, Xia D, Lü C, Xie J 2010 Appl. Phys. Lett. 97 061902

    [25]

    Krishna K M, Umeno M, Nukaya Y, Soga T, Jimbo T 2000 Appl. Phys. Lett. 77 1472

    [26]

    Rusop M, Mominuzzaman S M, Soga T, Jimboa T, Umeno M 2006 Sol. Energy Mater. Sol. Cells 90 3205

    [27]

    Yap S S, Tou T Y 2008 Vacuum 82 1449

    [28]

    Hu Z H, Liao X B, Liu Z M, Xia C F, Chen T J 2003 Chin. Phys. 12 112

    [29]

    Liu Z F, Miyauchi M, Uemura Y, Cui Y, Hara K, Zhao Z G, Sunahara K, Furube A 2010 Appl. Phys. Lett. 96 233107

    [30]

    Gielis J J H, Hoex B, van de Sanden M C M, Kessels W M M 2008 J. Appl. Phys. 104 073701

    [31]

    Hoex B, Gielis J J H, van de Sanden M C M, Kessels W M M 2008 J. Appl. Phys. 104 113703

    [32]

    Li G H, Li G C, Bicelli L P 1998 Acta Energiae Solaris Sinica 19 172 (in Chinese) [李果华, 李国昌, Bicelli L P 1998 太阳能学报 19 172]

    [33]

    McPherson M 2002 Nucl. Instrum. Methods Phys. Res. A 488 100

  • [1]

    Goetzberger A, Hebling C 2000 Sol. Energy Mater. Sol. Cells 62 1

    [2]

    Goetzberger A, Hebling C, Schock H W 2003 Mat. Sci. Eng. R 40 1

    [3]

    Wenham S R, Green M A, Watt M E, Corkish R 2007 Applied Photovoltaics (2nd Ed.) (London: Earthscan Publications Ltd.)

    [4]

    Zhu H W, Wei J Q, Wang K L, Wu D H 2009 Sol. Energy Mater. Sol. Cells 93 1461

    [5]

    Hao H Y, Kong G L, Zeng X B, Xu Y, Diao H W, Liao X B 2005 Acta Phys. Sin. 54 3327 (in Chinese) [郝会颖, 孔光临, 曾湘波, 许颖, 刁宏伟, 廖显伯 2005 物理学报 54 3327]

    [6]

    Li Y J, Zheng J G, Feng L H, Li B, Zeng G G, Cai Y P, Zhang J Q, Li W, Lei Z, Wu L L, Cai W 2010 Acta Phys. Sin. 59 625 (in Chinese) [李愿杰, 郑家贵, 冯良桓, 黎兵, 曾广根, 蔡亚平, 张静全, 李卫, 雷智, 武莉莉, 蔡伟 2010 物理学报 59 625]

    [7]

    Zhang W Y, Wu X P, Sun L J, Lin B X, Fu Z X 2008 Acta Phys. Sin. 57 4471 (in Chinese) [张伟英, 邬小鹏, 孙利杰, 林碧霞, 傅竹西 2008 物理学报 57 4471]

    [8]

    Li Z R, Saini V, Dervishi E, Xu Y, Mahmood M, Biris A R, Biris A S 2009 Nanotech. Confer. Expo. 1 53

    [9]

    Ma Z H, Cao Q, Zuo Y H, Zheng J, Xue C L, Cheng B W, Wang Q M 2010 Chin. Phys. B 20 106104

    [10]

    Lu Z L, Wang C Q, Jia Y, Zhang B L, Yao N 2007 Chin. Phys. 16 843

    [11]

    Yu W, Wang C S, Lu W B, He J, Han X X, Fu G S 2007 Chin. Phys. 16 2310

    [12]

    Freitag M, Martin Y, Misewich J A 2003 Nano Lett. 3 1067

    [13]

    Balasubramanian K, Fan Y W, Burghard M 2004 Appl. Phys. Lett. 84 2400

    [14]

    Lee J U 2005 Appl. Phys. Lett. 87 073101

    [15]

    Gabor M, Zhong Z H, Bosnick K, Park J W, McEuen P L 2009 Science 325 1367

    [16]

    Kymakis E, Amaratunga G A J 2002 Appl. Phys. Lett. 80 112

    [17]

    Kymakis E, Alexandrou I, Amaratunga G A J 2003 J. Appl. Phys. 93 1764

    [18]

    Wang N N, Yu J S, Zang Y, Jiang Y D 2010 Chin. Phys. B 19 038602

    [19]

    Jin Y, Curry R J, Sloan J, Hatton R A, Chong L C, Blanchard N, Stolojan V, Kroto H W, Silva S R P 2006 J. Mater. Chem. 16 3715

    [20]

    Somani P R, Somani S P, Umeno M 2008 Carbon Sci. Technol. 1 1

    [21]

    Wang X, Zhi L J, Mullen K 2008 Nano Lett. 8 323

    [22]

    Zhou S Y, Gweon G H, Fedorov A V, First P N, de Heer W A, Lee D H, Guinea F, Castro Neto A H, Lanzara A 2007 Nature Mater. 6 770

    [23]

    Yu H A, Kaneko Y, Yoshimura S, Otani S, Yoshimura 1996 Appl. Phys. Lett. 68 547

    [24]

    Ma M, Xue Q Z, Chen H J, Zhou X Y, Xia D, Lü C, Xie J 2010 Appl. Phys. Lett. 97 061902

    [25]

    Krishna K M, Umeno M, Nukaya Y, Soga T, Jimbo T 2000 Appl. Phys. Lett. 77 1472

    [26]

    Rusop M, Mominuzzaman S M, Soga T, Jimboa T, Umeno M 2006 Sol. Energy Mater. Sol. Cells 90 3205

    [27]

    Yap S S, Tou T Y 2008 Vacuum 82 1449

    [28]

    Hu Z H, Liao X B, Liu Z M, Xia C F, Chen T J 2003 Chin. Phys. 12 112

    [29]

    Liu Z F, Miyauchi M, Uemura Y, Cui Y, Hara K, Zhao Z G, Sunahara K, Furube A 2010 Appl. Phys. Lett. 96 233107

    [30]

    Gielis J J H, Hoex B, van de Sanden M C M, Kessels W M M 2008 J. Appl. Phys. 104 073701

    [31]

    Hoex B, Gielis J J H, van de Sanden M C M, Kessels W M M 2008 J. Appl. Phys. 104 113703

    [32]

    Li G H, Li G C, Bicelli L P 1998 Acta Energiae Solaris Sinica 19 172 (in Chinese) [李果华, 李国昌, Bicelli L P 1998 太阳能学报 19 172]

    [33]

    McPherson M 2002 Nucl. Instrum. Methods Phys. Res. A 488 100

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  • Received Date:  10 November 2010
  • Accepted Date:  22 December 2011
  • Published Online:  20 July 2012

Enhancing photovoltaic effect of Co2-C98/Al2O3/Si heterostructures by Al2O3

  • 1. Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;
  • 2. Beijing National Center of Electron Microscopy, Beijing 100084, China;
  • 3. China Battery Industry Association, Beijing 100740, China
Fund Project:  Project supported by the Key Program of Jointed Funds of National Natural Science Foundation of China-Guangdong Province, China (Grant No. U0734001), the National Natural Science Foundation of China (Grant No. 50772054), and the National Basic Research Program of China (Grant No. 2009CB929202).

Abstract: As energy crisis is aggravated, solar cell, as a common form of the development and utilization of solar energy, has attracted more and more attention all over the world. With solar cells developing towards the direction of high efficiency, thin film, non-toxic and rich raw materials, the pure silicon solar cell could not meet these requirements, so the new material and process are imminently required. This paper deals with the photovoltaic effect of the carbon material based on the silicon heterostructure, and its possible application to solar cells. Co2-C98/Al2O3/Si heterostructure with a 4 nm-thick Al2O3 layer shows the best photovoltaic effect performance with a short-current density of 18.75 mA/cm2, an open-circuit voltage of 0.447 V and a power conversion efficiency of 3.27% with AM1.5 illumination, which is much better than Co2-C98/Si heterostructure without the Al2O3 layer. The effect of Al2O3 layer is attributed to the reduction of the interface defects, the suppression of the surface recombination and the enhancement of barrier height, which are proved by the capacitance-voltage and current-voltage measurements under dark condition. This work may shed light on the carbon/silicon based solar cells.

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