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Influence of structure parameters on the performance of p-i-n InGaN solar cell

Zhou Mei Zhao De-Gang

Influence of structure parameters on the performance of p-i-n InGaN solar cell

Zhou Mei, Zhao De-Gang
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  • Received Date:  08 November 2011
  • Accepted Date:  07 January 2012
  • Published Online:  20 August 2012

Influence of structure parameters on the performance of p-i-n InGaN solar cell

  • 1. Department of Physics, China Agriculture University, Beijing 100083, China;
  • 2. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Fund Project:  Project supported by the State Key Laboratory on Integrated Optoelectronics, China (Grant No. IOSKL-KF200914) and the Fundamental Research Fund for the Central Universities, China (Grant No. 2011JS049).

Abstract: The effect of structure parameters on the performance of p-i-n InGaN solar cell is investigated by theoretical calculation. It is found that the short-circuit current decreases while the open-circuit voltage increases with the increase of bandgap of InGaN material. The maximal energy conversion efficiency of p-i-n homojunction InGaN solar cell can be obtained when the bandgap of InGaN is around 1.5 eV. It is also found that the energy conversion efficiency can be improved by appropriately increasing bandgap of p-InGaN p-i-n heterojunction InGaN solar cell, in addition, the efficiency of p-i-n heterojunction InGaN solar cell may be increased further by employing the back electric filed structure. The simulation results suggest that performance of InGaN solar cell can be improved by employing p-i-n heterojunction structure if the appropriate bandgaps of p-InGaN and n-InGaN are adopted.

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