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Raman spectra of monoand bi-layer graphenes with ion-induced defects-and its dispersive frequency on the excitation energy

Li Qiao-Qiao Han Wen-Peng Zhao Wei-Jie Lu Yan Zhang Xin Tan Ping-Heng Feng Zhi-Hong Li Jia

Raman spectra of monoand bi-layer graphenes with ion-induced defects-and its dispersive frequency on the excitation energy

Li Qiao-Qiao, Han Wen-Peng, Zhao Wei-Jie, Lu Yan, Zhang Xin, Tan Ping-Heng, Feng Zhi-Hong, Li Jia
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  • Raman spectroscopy has become a key way for characterizing and studying disorder in graphene, due to its nondestructive, rapid and sensitive technique. In this paper, ion implantation is used to produce the structural defects in single-layer graphene (SLG) and bi-layer graphene (BLG). The first- and second-order modes of ion-implanted SLG and BLG and their physical origins were studied by Raman spectroscopy. The dependence of dispersive frequency of first- and second-order modes in SLG and BLG on the excitation energy was discussed in detail. Results show that the ~2450 cm-1 peak is the combination mode of the D mode at ~1350 cm-1 and the D" mode at ~1150 cm-1.
    • Funds: Project supported by the National Basic Research Program of China (Grant No. G2009CB929301), and the National Natural Science Foundation of China (Grant Nos. 11225421, 10934007).
    [1]

    Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666

    [2]

    Lu H Y, Wang Q H 2008 Chin. Phys. Lett. 25 3746

    [3]

    Hu S J, Du Wei, Zhang G P, Gao M, Lu Z Y, Wang X Q 2012 Chin. Phys. Lett. 29 057201

    [4]

    Zhang Y B, Tan Y W, Stormer H L, Kim P 2005 Nature (London) 438 201

    [5]

    Stoller M D, Park S J, Zhu Y W, An J H, Ruoff R S 2008 Nano Lett. 8 3498

    [6]

    Xu YH, Guo Y C, Wu Y Q, Xu R M, Yan B 2012 Acta Phys. Sin. 61 010701 (in Chinese) [徐跃杭, 国云川, 吴韵秋, 徐锐敏, 延波 2012 物理学报 61 010701]

    [7]

    Bunch J S, Yaish Y, Brink M, Bolotin K, McEuen P L 2005 Nano Lett. 5 287

    [8]

    Tan P H, Han W P, Zhao W J, Wu Z H, Chang K, Wang H, Wang Y F, Bonini N, Marzari N, Pugno N, Savini G, Lombardo A, Ferrari A C 2012 Nat. Mater. 11 294

    [9]

    Ferrari A C, Meyer J C, Scardaci V, Casiraghi C, Lazzeri M, Mauri F, Piscanec S, Jiang D, Novoselov K S, Roth S, Geim A K 2006 Phys. Rev. Lett. 97 187401

    [10]

    Zhao W J, Tan P H, Liu J, Ferrari A C 2011 J. Am. Chem. Soc. 133 5941

    [11]

    Kang C Y, Tang J, Li L M, Yan W S, Xu P S, Wei S Q 2012 Acta Phys. Sin. 61 037302 (in Chinese) [康朝阳, 唐军, 李利民, 闫文盛, 徐彭寿, 韦世强 2012 物理学报 61 037302]

    [12]

    Wang Y Y, Ni Z H, Shen Z X, Wang H M, Wu Y H 2008 Appl. Phys. Lett. 92 043121

    [13]

    Zhao W J, Tan P H, Zhang J, Liu J A 2010 Phys. Rev. B 82 245423

    [14]

    Tan P H, Deng Y M, Zhao Q 1998 Phys. Rev. B 58 5453

    [15]

    Tan P H, Deng Y M, Zhao Q, Cheng W C 1999 Appl. Phys. Lett. 74 1818

    [16]

    Tan P H, Hu C Y, Dong J, Shen W C, Zhang B F 2001 Phys. Rev. B 64 214301

    [17]

    Casiraghi C, Hartschuh A, Qian H, Piscanec S, Georgi C, Fasoli A, Novoselov K S, Basko D M, Ferrari A C 2009 Nano Lett. 9 1433

    [18]

    Jorio A, Lucchese M M, Stavale F, Ferreira E H M, Moutinho M V O, Capaz R B, Achete C A 2010 J. Phys-Condens. Mat. 22 334204

    [19]

    Thomsen C, Reich S 2000 Phys. Rev. Lett. 85 5214

    [20]

    Saito R, Jorio A, Souza A G, Dresselhaus G, Dresselhaus M S, Pimenta M A 2002 Phys. Rev. Lett. 88 027401

    [21]

    Chen D M 2010 Acta Phys. Sin. 59 6399 (in Chinese) [陈东猛 2010 物理学报 59 6399]

    [22]

    Piscanec S, Lazzeri M, Mauri F, Ferrari A C, Robertson J 2004 Phys. Rev. Lett. 93 185503

    [23]

    Tan P H, An L, Liu L Q, Guo Z X, Czerw R, Carroll D L, Ajayan P M, Zhang N, Guo H L 2002 Phys. Rev. B 66 245410

    [24]

    Blake P, Hill E W, Neto A H C, Novoselov K S, Jiang D, Yang R, Booth T J, Geim A K 2007 Appl. Phys. Lett. 91 063124

    [25]

    Han W P, Shi Y M, Li X L, Luo S Q, Lu Y, Tan P H Acta Phys. Sin. 62 110702 (in Chinese) [韩文鹏, 史衍猛, 李晓莉, 罗师强, 鲁妍, 谭平恒 物理学报 62 110702]

    [26]

    Xu Y H, Jia Y L, Zhou J, Dong J M 2010 Chin. Phys. Lett. 27 057303

    [27]

    Tan P H, Hu C Y, Dong J, Shen W C 2007 Physica E 37 93

    [28]

    Venezuela P, Lazzeri M, Mauri F 2011 Phys. Rev. B 84 035433

  • [1]

    Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666

    [2]

    Lu H Y, Wang Q H 2008 Chin. Phys. Lett. 25 3746

    [3]

    Hu S J, Du Wei, Zhang G P, Gao M, Lu Z Y, Wang X Q 2012 Chin. Phys. Lett. 29 057201

    [4]

    Zhang Y B, Tan Y W, Stormer H L, Kim P 2005 Nature (London) 438 201

    [5]

    Stoller M D, Park S J, Zhu Y W, An J H, Ruoff R S 2008 Nano Lett. 8 3498

    [6]

    Xu YH, Guo Y C, Wu Y Q, Xu R M, Yan B 2012 Acta Phys. Sin. 61 010701 (in Chinese) [徐跃杭, 国云川, 吴韵秋, 徐锐敏, 延波 2012 物理学报 61 010701]

    [7]

    Bunch J S, Yaish Y, Brink M, Bolotin K, McEuen P L 2005 Nano Lett. 5 287

    [8]

    Tan P H, Han W P, Zhao W J, Wu Z H, Chang K, Wang H, Wang Y F, Bonini N, Marzari N, Pugno N, Savini G, Lombardo A, Ferrari A C 2012 Nat. Mater. 11 294

    [9]

    Ferrari A C, Meyer J C, Scardaci V, Casiraghi C, Lazzeri M, Mauri F, Piscanec S, Jiang D, Novoselov K S, Roth S, Geim A K 2006 Phys. Rev. Lett. 97 187401

    [10]

    Zhao W J, Tan P H, Liu J, Ferrari A C 2011 J. Am. Chem. Soc. 133 5941

    [11]

    Kang C Y, Tang J, Li L M, Yan W S, Xu P S, Wei S Q 2012 Acta Phys. Sin. 61 037302 (in Chinese) [康朝阳, 唐军, 李利民, 闫文盛, 徐彭寿, 韦世强 2012 物理学报 61 037302]

    [12]

    Wang Y Y, Ni Z H, Shen Z X, Wang H M, Wu Y H 2008 Appl. Phys. Lett. 92 043121

    [13]

    Zhao W J, Tan P H, Zhang J, Liu J A 2010 Phys. Rev. B 82 245423

    [14]

    Tan P H, Deng Y M, Zhao Q 1998 Phys. Rev. B 58 5453

    [15]

    Tan P H, Deng Y M, Zhao Q, Cheng W C 1999 Appl. Phys. Lett. 74 1818

    [16]

    Tan P H, Hu C Y, Dong J, Shen W C, Zhang B F 2001 Phys. Rev. B 64 214301

    [17]

    Casiraghi C, Hartschuh A, Qian H, Piscanec S, Georgi C, Fasoli A, Novoselov K S, Basko D M, Ferrari A C 2009 Nano Lett. 9 1433

    [18]

    Jorio A, Lucchese M M, Stavale F, Ferreira E H M, Moutinho M V O, Capaz R B, Achete C A 2010 J. Phys-Condens. Mat. 22 334204

    [19]

    Thomsen C, Reich S 2000 Phys. Rev. Lett. 85 5214

    [20]

    Saito R, Jorio A, Souza A G, Dresselhaus G, Dresselhaus M S, Pimenta M A 2002 Phys. Rev. Lett. 88 027401

    [21]

    Chen D M 2010 Acta Phys. Sin. 59 6399 (in Chinese) [陈东猛 2010 物理学报 59 6399]

    [22]

    Piscanec S, Lazzeri M, Mauri F, Ferrari A C, Robertson J 2004 Phys. Rev. Lett. 93 185503

    [23]

    Tan P H, An L, Liu L Q, Guo Z X, Czerw R, Carroll D L, Ajayan P M, Zhang N, Guo H L 2002 Phys. Rev. B 66 245410

    [24]

    Blake P, Hill E W, Neto A H C, Novoselov K S, Jiang D, Yang R, Booth T J, Geim A K 2007 Appl. Phys. Lett. 91 063124

    [25]

    Han W P, Shi Y M, Li X L, Luo S Q, Lu Y, Tan P H Acta Phys. Sin. 62 110702 (in Chinese) [韩文鹏, 史衍猛, 李晓莉, 罗师强, 鲁妍, 谭平恒 物理学报 62 110702]

    [26]

    Xu Y H, Jia Y L, Zhou J, Dong J M 2010 Chin. Phys. Lett. 27 057303

    [27]

    Tan P H, Hu C Y, Dong J, Shen W C 2007 Physica E 37 93

    [28]

    Venezuela P, Lazzeri M, Mauri F 2011 Phys. Rev. B 84 035433

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  • Received Date:  28 February 2013
  • Accepted Date:  18 March 2013
  • Published Online:  05 July 2013

Raman spectra of monoand bi-layer graphenes with ion-induced defects-and its dispersive frequency on the excitation energy

  • 1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
  • 2. Science and Technology on ASIC Lab., Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
Fund Project:  Project supported by the National Basic Research Program of China (Grant No. G2009CB929301), and the National Natural Science Foundation of China (Grant Nos. 11225421, 10934007).

Abstract: Raman spectroscopy has become a key way for characterizing and studying disorder in graphene, due to its nondestructive, rapid and sensitive technique. In this paper, ion implantation is used to produce the structural defects in single-layer graphene (SLG) and bi-layer graphene (BLG). The first- and second-order modes of ion-implanted SLG and BLG and their physical origins were studied by Raman spectroscopy. The dependence of dispersive frequency of first- and second-order modes in SLG and BLG on the excitation energy was discussed in detail. Results show that the ~2450 cm-1 peak is the combination mode of the D mode at ~1350 cm-1 and the D" mode at ~1150 cm-1.

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