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Two-dimensional electron Gas in ZnMgO/ZnO heterostructures

Zhang Yang Gu Shu-Lin Ye Jian-Dong Huang Shi-Min Gu Ran Chen Bin Zhu Shun-Ming Zhen You-Dou

Two-dimensional electron Gas in ZnMgO/ZnO heterostructures

Zhang Yang, Gu Shu-Lin, Ye Jian-Dong, Huang Shi-Min, Gu Ran, Chen Bin, Zhu Shun-Ming, Zhen You-Dou
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  • Based on the band structure and related theoretical model of two-dimensional electron gas (2DEG), the dependence of the distribution of 2DEG on the thickness of ZnMgO barrier and related Mg content in ZnMgO/ZnO heterostructures has been computed by self-consistently solving the coupled Schrodinger and Poisson equations. Computation results reveal a critical thickness of the ZnMgO barrier for 2DEG formation, with no 2DEG occurring as the barrier thickness is below the critical value. When the thickness is above the value, the density of the 2DEG increases linearly with the thickness of ZnMgO barrier and saturates finally. The density of the 2DEG also shows a strong dependence on the Mg content in the ZnMgO barrier, with an obvious increase obtained as the Mg content enhances. At the same time, we compare the computed results with experimental data reported in the references with a certain degree of consistence obtained. Explanations and discussions of the above comparison have been presented in the study from the views of polarization effects and band structure.
    • Funds: Project Research supported by the State Key Program for Basic Research of China(Grant No. 2011CB302003), the National Natural Science Foundation of China(Grant Nos. 61025020, 60990312, 61274058), the Basic Research Program of Jiangsu Province, China (Grant No. BK2011437), and the Priority Academic Program Development of Jiangsu Higher Education Institutions.
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    Xia Y J, Guan Z S, Qin H C, Li W Y 2011 Acta Phys. Sin. 40 580 (in Chinese) [夏玉静, 管自生, 秦洪春, 李伟英 2011 物理学报 40 580]

    [2]

    Tang Z K 2005 Acta Phys. Sin. 34 21 (in Chinese) [汤子康 2005 物理学报 34 21]

    [3]

    Chang Y Q, Ni S L, Long Y, Ye R C 2006 Acta Phys. Sin. 55 5409 (in Chinese) [常永勤, 倪赛力, 龙毅, 叶荣昌 2006 物理学报 55 5409]

    [4]

    Sasa S, Hayafuji T, Kawasaki M, Koike K, Yano M, Inoue M 2007 IEEE 28 543

    [5]

    Ohtomo A, Kawasaki M, Ohkubo, Koinuma H, Yasuda T, Segawa Y 1999 Appl. Phys. Lett. 75 980

    [6]

    Ye J D, Pannirselvam S, Lim S T, Bi J F, Sun X W, Lo GQ, Teo K L 2010 Appl. Phys. Lett. 97 111908

    [7]

    Ye J D, Lim S T, Michel B, Gu S L, Zheng Y D, Hark H T, Chennupati J, Sun X W, Kie L T 2012 Scientific Reports 2 533

    [8]

    Kong Y C, Zheng Y D, Chu R M, Gu S L 2003 Acta Phys. Sin. 52 1756 (in Chinese) [孔月婵, 郑有炓, 储荣明, 顾书林 2003 物理学报 52 1756]

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    Yu H T, Kevin F B 2002 J. Appl. Phys. 91 3730

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    Ma L, Wang Y, Yu Z P, Tian L L 2005 Research & Progress of SSE Solid State Electronics 25 172 (in Chinese) [祃龙, 王燕, 余志平, 田立林 2005 固体电子学研究与进展 25 172]

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    Liu F, Wang T, Yao J Q 2006 Science Technology and Engineering 23 4682 (in Chinese) [刘芳, 王涛, 姚建铨 2006 科学技术与工程 23 4682]

    [12]

    Zheng Z W, Shen B, Tang N, Zhang R, Shi Y, Zheng Y D, Gui Y S, Qiu Z J, Jiang C P, Guo S L, Chu Q H 2004 Acta Phys. Sin. 53 596 (in Chinese) [郑泽伟, 沈波, 唐宁, 张荣, 施毅, 郑有炓, 桂永胜, 仇志军, 蒋春萍, 郭少令, 褚君浩 2004 物理学报 53 596]

    [13]

    Kong Y C, Zheng Y D, Zhou C H, Deng Y Z, Gu S L, Shen P, Zhang R, Han P, Jiang R L, Shi Y 2004 Acta Phys. Sin. 53 2320 (in Chinese) [孔月婵, 郑有炓, 周春红, 邓永桢, 顾书林, 沈波, 张荣, 韩平, 江若琏, 施毅 2004 物理学报 53 2320]

    [14]

    Liu H X, Lu F M, Wang Y H, Song D J, Wu Y 2011 Journal of Xidian University (Natural Science Edition) 38 147 (in Chinese) [刘红侠, 卢风铭 王勇淮, 宋大建, 武毅 2011 西安电子科技大学学报 (自然科学版 38 147]

    [15]

    Tampo H, Shibata H, Matsubara K, Yamada A, Fons P, Niki S 2006 Appl. Phys. Lett. 89 132113

    [16]

    Chen H, Gu S L, Liu J G, Ye J D, Tang K, Zhu S M, Zheng Y D 2011 Appl. Phys. Lett. 99 211906

    [17]

    Nakano M, Tsukazaki A, Ueno K, Gunji R Y, Ohtomo A, Fukumura T, Kawasaki M 2010 Appl. Phys. Lett. 96 052116

    [18]

    Park S H, Ahn D 2005 Appl. Phys. Lett. 87 253509

    [19]

    Chen X Y, Fang F, Ng A M C, Aleksandra B D, Cheah K W, Ling C C, Chan W K, Fong P W K, Lui H F, Surya C 2011 J. Appl. Phys. 109 084330

    [20]

    Wood C, Jena D 2008 Polarization Effects in Semiconductors From Ab Initio Theory to Device Applications (New York: Springer) p14-86

    [21]

    Kong Y C 2007 Ph. D. Dissertation (Nanjing: Nanjing University) (in Chinese) [孔月婵 2007 博士学位论文 (南京: 南京大学)]

    [22]

    Tan I H, Snider G L, Chang L D, Hu E L 1990 J. Appl. Phys. 68 4071

    [23]

    Wang Y F, Tang L B 2010 Infrared Technology 32 213 (in Chinese) [王忆锋, 唐利斌 2010 红外技术 32 213]

    [24]

    Yu D H, Tang H Z 2003 Numerical Solution of Differential Equations (Beijing: Science Press) p176-177 (in Chinese) [余德浩, 汤华中 2003 微分方程数值解法 (北京: 北京科学出版社) 第176–177页]

    [25]

    Tampo H, Shibata H, Maejima K, Yamada A, Matsubara K 2008 Appl. Phys. Lett. 93 2104

    [26]

    Sasa S, Tamaki T, Koike K, Yano M, Inoue M 2008 J. Phys. 109 012030

  • [1]

    Xia Y J, Guan Z S, Qin H C, Li W Y 2011 Acta Phys. Sin. 40 580 (in Chinese) [夏玉静, 管自生, 秦洪春, 李伟英 2011 物理学报 40 580]

    [2]

    Tang Z K 2005 Acta Phys. Sin. 34 21 (in Chinese) [汤子康 2005 物理学报 34 21]

    [3]

    Chang Y Q, Ni S L, Long Y, Ye R C 2006 Acta Phys. Sin. 55 5409 (in Chinese) [常永勤, 倪赛力, 龙毅, 叶荣昌 2006 物理学报 55 5409]

    [4]

    Sasa S, Hayafuji T, Kawasaki M, Koike K, Yano M, Inoue M 2007 IEEE 28 543

    [5]

    Ohtomo A, Kawasaki M, Ohkubo, Koinuma H, Yasuda T, Segawa Y 1999 Appl. Phys. Lett. 75 980

    [6]

    Ye J D, Pannirselvam S, Lim S T, Bi J F, Sun X W, Lo GQ, Teo K L 2010 Appl. Phys. Lett. 97 111908

    [7]

    Ye J D, Lim S T, Michel B, Gu S L, Zheng Y D, Hark H T, Chennupati J, Sun X W, Kie L T 2012 Scientific Reports 2 533

    [8]

    Kong Y C, Zheng Y D, Chu R M, Gu S L 2003 Acta Phys. Sin. 52 1756 (in Chinese) [孔月婵, 郑有炓, 储荣明, 顾书林 2003 物理学报 52 1756]

    [9]

    Yu H T, Kevin F B 2002 J. Appl. Phys. 91 3730

    [10]

    Ma L, Wang Y, Yu Z P, Tian L L 2005 Research & Progress of SSE Solid State Electronics 25 172 (in Chinese) [祃龙, 王燕, 余志平, 田立林 2005 固体电子学研究与进展 25 172]

    [11]

    Liu F, Wang T, Yao J Q 2006 Science Technology and Engineering 23 4682 (in Chinese) [刘芳, 王涛, 姚建铨 2006 科学技术与工程 23 4682]

    [12]

    Zheng Z W, Shen B, Tang N, Zhang R, Shi Y, Zheng Y D, Gui Y S, Qiu Z J, Jiang C P, Guo S L, Chu Q H 2004 Acta Phys. Sin. 53 596 (in Chinese) [郑泽伟, 沈波, 唐宁, 张荣, 施毅, 郑有炓, 桂永胜, 仇志军, 蒋春萍, 郭少令, 褚君浩 2004 物理学报 53 596]

    [13]

    Kong Y C, Zheng Y D, Zhou C H, Deng Y Z, Gu S L, Shen P, Zhang R, Han P, Jiang R L, Shi Y 2004 Acta Phys. Sin. 53 2320 (in Chinese) [孔月婵, 郑有炓, 周春红, 邓永桢, 顾书林, 沈波, 张荣, 韩平, 江若琏, 施毅 2004 物理学报 53 2320]

    [14]

    Liu H X, Lu F M, Wang Y H, Song D J, Wu Y 2011 Journal of Xidian University (Natural Science Edition) 38 147 (in Chinese) [刘红侠, 卢风铭 王勇淮, 宋大建, 武毅 2011 西安电子科技大学学报 (自然科学版 38 147]

    [15]

    Tampo H, Shibata H, Matsubara K, Yamada A, Fons P, Niki S 2006 Appl. Phys. Lett. 89 132113

    [16]

    Chen H, Gu S L, Liu J G, Ye J D, Tang K, Zhu S M, Zheng Y D 2011 Appl. Phys. Lett. 99 211906

    [17]

    Nakano M, Tsukazaki A, Ueno K, Gunji R Y, Ohtomo A, Fukumura T, Kawasaki M 2010 Appl. Phys. Lett. 96 052116

    [18]

    Park S H, Ahn D 2005 Appl. Phys. Lett. 87 253509

    [19]

    Chen X Y, Fang F, Ng A M C, Aleksandra B D, Cheah K W, Ling C C, Chan W K, Fong P W K, Lui H F, Surya C 2011 J. Appl. Phys. 109 084330

    [20]

    Wood C, Jena D 2008 Polarization Effects in Semiconductors From Ab Initio Theory to Device Applications (New York: Springer) p14-86

    [21]

    Kong Y C 2007 Ph. D. Dissertation (Nanjing: Nanjing University) (in Chinese) [孔月婵 2007 博士学位论文 (南京: 南京大学)]

    [22]

    Tan I H, Snider G L, Chang L D, Hu E L 1990 J. Appl. Phys. 68 4071

    [23]

    Wang Y F, Tang L B 2010 Infrared Technology 32 213 (in Chinese) [王忆锋, 唐利斌 2010 红外技术 32 213]

    [24]

    Yu D H, Tang H Z 2003 Numerical Solution of Differential Equations (Beijing: Science Press) p176-177 (in Chinese) [余德浩, 汤华中 2003 微分方程数值解法 (北京: 北京科学出版社) 第176–177页]

    [25]

    Tampo H, Shibata H, Maejima K, Yamada A, Matsubara K 2008 Appl. Phys. Lett. 93 2104

    [26]

    Sasa S, Tamaki T, Koike K, Yano M, Inoue M 2008 J. Phys. 109 012030

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  • Received Date:  11 December 2012
  • Accepted Date:  01 April 2013
  • Published Online:  05 August 2013

Two-dimensional electron Gas in ZnMgO/ZnO heterostructures

  • 1. Nanjing National Laboratory of Microstructures & Dept. of Electronic science and engineering, Nanjing University, Nanjing 210093, China
Fund Project:  Project Research supported by the State Key Program for Basic Research of China(Grant No. 2011CB302003), the National Natural Science Foundation of China(Grant Nos. 61025020, 60990312, 61274058), the Basic Research Program of Jiangsu Province, China (Grant No. BK2011437), and the Priority Academic Program Development of Jiangsu Higher Education Institutions.

Abstract: Based on the band structure and related theoretical model of two-dimensional electron gas (2DEG), the dependence of the distribution of 2DEG on the thickness of ZnMgO barrier and related Mg content in ZnMgO/ZnO heterostructures has been computed by self-consistently solving the coupled Schrodinger and Poisson equations. Computation results reveal a critical thickness of the ZnMgO barrier for 2DEG formation, with no 2DEG occurring as the barrier thickness is below the critical value. When the thickness is above the value, the density of the 2DEG increases linearly with the thickness of ZnMgO barrier and saturates finally. The density of the 2DEG also shows a strong dependence on the Mg content in the ZnMgO barrier, with an obvious increase obtained as the Mg content enhances. At the same time, we compare the computed results with experimental data reported in the references with a certain degree of consistence obtained. Explanations and discussions of the above comparison have been presented in the study from the views of polarization effects and band structure.

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