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Properties and mechanism analysis of metal/Ge ohmic contact

Yan Guang-Ming Li Cheng Tang Meng-Rao Huang Shi-Hao Wang Chen Lu Wei-Fang Huang Wei Lai Hong-Kai Chen Song-Yan

Properties and mechanism analysis of metal/Ge ohmic contact

Yan Guang-Ming, Li Cheng, Tang Meng-Rao, Huang Shi-Hao, Wang Chen, Lu Wei-Fang, Huang Wei, Lai Hong-Kai, Chen Song-Yan
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  • Received Date:  12 April 2013
  • Accepted Date:  03 May 2013
  • Published Online:  20 August 2013

Properties and mechanism analysis of metal/Ge ohmic contact

  • 1. Semiconductor Photonics Reseach Center, Department of Physics, Xiamen University, Xiamen 361005, China
Fund Project:  Project supported by the National Basic Research Program of China (Grant Nos. 2012CB933503, 2013CB632103), the National Natural Science Foundation of China (Grant Nos. 61036003, 61176092), and the Fundamental Research Fund for the Central Universities, China (Grant No. 2010121056).

Abstract: Large contact resistance due to Fermi level pinning effect at the interface between metal and n-type Ge strongly restricts the performance of Ge device on Si substrate. In this paper, the contacts of metal Al and Ni with n-type Ge and p-type Ge epitaxial layers grown by UHV/CVD are comparatively studied. It is found that the contact of NiGe/n-Ge is better than that of Al/n-Ge at the same dopant concentration. When the concentration of P is 21019 cm-3, the ohmic contact of NiGe/n-Ge with c down to 1.4310-5 cm2 is demomstrated, which is about one order of magnitude lower than that of Al/n-Ge contact. The specific contact resistance of NiGe/p-Ge is 1.6810-5 cm2 when the B concentration is 4.21018 cm-3, corresponding to that of Al/p-Ge. Compared with Al/n-Ge contact, P segregation at the interface between NiGe and Ge, rather than lowering Schottky barrier height, is the main reseaon for achieving the low specific contact resistance. NiGe/Ge contact should be a good choice for contact electrode for Ge devices at present.

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