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Growth and thermoelectric properties of Ge doped n-type Sn-based type-Ⅷ single crystalline clathrate

Meng Dai-Yi Shen Lan-Xian Shai Xu-Xia Dong Guo-Jun Deng Shu-Kang

Growth and thermoelectric properties of Ge doped n-type Sn-based type-Ⅷ single crystalline clathrate

Meng Dai-Yi, Shen Lan-Xian, Shai Xu-Xia, Dong Guo-Jun, Deng Shu-Kang
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  • Single crystalline samples of type-Ⅷ Ba8Ga16-xGexSn30 (0 ≤ x ≤ 1.0) clathrates are fabricated by the Sn flux method. The structures and thermoelectric properties of the samples at temperatures ranging from 300 to 600 K are studied. Research results show that the actual content of Ge is relatively small in single crystal. The lattice parameters of the samples decrease slightly with the increase of the doping composition of Ge. The Ge doped samples have lower carrier density and higher carrier mobility than undoped samples. The Seebeck coefficients of all the doped samples are negative, and their absolute values are smaller than those of the undoped one. However, the electrical conductivity of the sample is increased by 62% after doping Ge and the sample of x=0.5 obtains a maximum value of ZT (1.25) at about 500 K.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51262032).
    [1]

    Slack G A 1995 CRC Handbook of Thermoelectrics CRC

    [2]

    Li H, Tang X F, Zhao W Y, Zhang Q J 2006 Acta Phys. Sin. 55 6506 (in Chinese) [李涵, 唐新峰, 赵文俞, 张清杰 2006 物理学报 55 6506]

    [3]

    Zhao W Y, Wei P, Zhang Q J, Dong C L, Liu L S, Tang X F 2009 J. Am. Chem. Soc. 131 3713

    [4]

    Zhao W Y, Dong C L, Wei P, Guan W, Liu L S, Zhai P C, Tang X F, Zhang Q J 2007 Appl. Phys. Lett. 102 113708

    [5]

    Zhai P C, Zhao W Y, Li Y, Liu L S, Tang X F, Zhang Q J, Niino M 2006 Appl. Phys. Lett. 89 052111

    [6]

    Avila M A, Suekuni K, Umeo K, Fukuoka H, Yamanaka S, Takabatake T 2006 Phys. Rev. B 74 125109

    [7]

    Suekuni K, Avila M A, Umeo K, Fukuoka H, Yamanaka S, Nakagawa T, Takabatake T 2008 Phys. Rev. B 77 235119

    [8]

    Huo D, Sakata T, Sasakawa T, Avila M A, Tsubota M, Iga F, Fukuoka H, Yamanaka S, Aoyagi S, Takabatake T 2005 Phys. Rev. B 71 075113

    [9]

    Bentien A, Pacheco V, Paschen S, Grin Y, Steglich F 2005 Phys. Rev. B 71 165206

    [10]

    Phan M H, Woods G T, Chaturvedi A, Stefanoski S, Nolas G S, Srikant H 2008 Appl. Phys. Lett. 93 252505

    [11]

    Pacheco V, Bentien A, Carrillo-Cabrera W, Paschen S, Steglich F, Grin Y 2005 Phys. Rev. B 71 165205

    [12]

    Sasaki Y, Kishimoto K, Koyanagi T, Asada H, Akai K 2009 Appl. Phys. Lett. 105 073702

    [13]

    Kishimoto K, Ikeda N, Akai K, Koyanagi T 2008 Appl. Phys. Express 1 031201

    [14]

    Huo D, Sakata T, Sasakawa T, Avila M A, Tsubota M, Iga F, Fukuoka H, Yamanaka S, Aoyagi S, Takabatake T 2005 Phys. Rev. B 71 075113

    [15]

    Xiong C, Tang X F, Qi Q, Deng S K, Zhang Q J 2006 Acta Phys. Sin. 55 6630 (in Chinese) [熊聪, 唐新峰, 祁琼, 邓书康, 张清杰 2006 物理学报 55 6630]

    [16]

    Huo D, Sakata T, Sasakawa T, Avila M A, Tsuboat M, Iga F, Fukuoka H, Yamanaka S, Aoyagi S, Takabatake T 2005 Phys. Rev. B 71 075113

    [17]

    Deng S K 2008 Ph. D. Dissertation (Hubei: Wuhan University of Technology) (in Chinese) [邓书康 2008 博士学位论文(湖北: 武汉理工大学)]

    [18]

    Sales B C, Mandrus D, Williams R K 1996 Science 272 1325

    [19]

    Nolas G S, Cohn J L, Slack G A, Schjuman S B 1998 Appl. Phys. Lett. 73 178

    [20]

    Kono Y, Ohya N, Taguchi T, Suekuni K, Takabatake T, Yamamoto S, Akai K 2010 J. Appl. Phys. 107 123720

    [21]

    Saiga Y, Suekuni K, Deng S K, Yamamoto T, Kono Y, Ohya N, Takabatake T 2010 J. Alloy. Compd. 507 1

    [22]

    Deng S K, Saiga Y, Kajisa K, Takabatake T 2011 J. Appl. Phys. 109 103704

    [23]

    Kishimoto K, Yamamoto H, Akai K, Koyanagi T 2012 J. Appl. Phys. 45 445306

    [24]

    Chen Y X, Du B L, Saiga Y, Kajisa K, Takabatake T 2013 J. Appl. Phys. 46 205302

    [25]

    Xiong C, Deng S K, Tang X F, Qi Q, Zhang Q J 2008 Acta Phys. Sin. 57 1190 [熊聪, 邓书康, 唐新峰, 祁琼, 张清杰 2008 物理学报 57 1190]

    [26]

    Caillt T, Borahchevsky A, Fleurial J P 1997 Mater. Res. Soc. Symp. Proc. 478 103

  • [1]

    Slack G A 1995 CRC Handbook of Thermoelectrics CRC

    [2]

    Li H, Tang X F, Zhao W Y, Zhang Q J 2006 Acta Phys. Sin. 55 6506 (in Chinese) [李涵, 唐新峰, 赵文俞, 张清杰 2006 物理学报 55 6506]

    [3]

    Zhao W Y, Wei P, Zhang Q J, Dong C L, Liu L S, Tang X F 2009 J. Am. Chem. Soc. 131 3713

    [4]

    Zhao W Y, Dong C L, Wei P, Guan W, Liu L S, Zhai P C, Tang X F, Zhang Q J 2007 Appl. Phys. Lett. 102 113708

    [5]

    Zhai P C, Zhao W Y, Li Y, Liu L S, Tang X F, Zhang Q J, Niino M 2006 Appl. Phys. Lett. 89 052111

    [6]

    Avila M A, Suekuni K, Umeo K, Fukuoka H, Yamanaka S, Takabatake T 2006 Phys. Rev. B 74 125109

    [7]

    Suekuni K, Avila M A, Umeo K, Fukuoka H, Yamanaka S, Nakagawa T, Takabatake T 2008 Phys. Rev. B 77 235119

    [8]

    Huo D, Sakata T, Sasakawa T, Avila M A, Tsubota M, Iga F, Fukuoka H, Yamanaka S, Aoyagi S, Takabatake T 2005 Phys. Rev. B 71 075113

    [9]

    Bentien A, Pacheco V, Paschen S, Grin Y, Steglich F 2005 Phys. Rev. B 71 165206

    [10]

    Phan M H, Woods G T, Chaturvedi A, Stefanoski S, Nolas G S, Srikant H 2008 Appl. Phys. Lett. 93 252505

    [11]

    Pacheco V, Bentien A, Carrillo-Cabrera W, Paschen S, Steglich F, Grin Y 2005 Phys. Rev. B 71 165205

    [12]

    Sasaki Y, Kishimoto K, Koyanagi T, Asada H, Akai K 2009 Appl. Phys. Lett. 105 073702

    [13]

    Kishimoto K, Ikeda N, Akai K, Koyanagi T 2008 Appl. Phys. Express 1 031201

    [14]

    Huo D, Sakata T, Sasakawa T, Avila M A, Tsubota M, Iga F, Fukuoka H, Yamanaka S, Aoyagi S, Takabatake T 2005 Phys. Rev. B 71 075113

    [15]

    Xiong C, Tang X F, Qi Q, Deng S K, Zhang Q J 2006 Acta Phys. Sin. 55 6630 (in Chinese) [熊聪, 唐新峰, 祁琼, 邓书康, 张清杰 2006 物理学报 55 6630]

    [16]

    Huo D, Sakata T, Sasakawa T, Avila M A, Tsuboat M, Iga F, Fukuoka H, Yamanaka S, Aoyagi S, Takabatake T 2005 Phys. Rev. B 71 075113

    [17]

    Deng S K 2008 Ph. D. Dissertation (Hubei: Wuhan University of Technology) (in Chinese) [邓书康 2008 博士学位论文(湖北: 武汉理工大学)]

    [18]

    Sales B C, Mandrus D, Williams R K 1996 Science 272 1325

    [19]

    Nolas G S, Cohn J L, Slack G A, Schjuman S B 1998 Appl. Phys. Lett. 73 178

    [20]

    Kono Y, Ohya N, Taguchi T, Suekuni K, Takabatake T, Yamamoto S, Akai K 2010 J. Appl. Phys. 107 123720

    [21]

    Saiga Y, Suekuni K, Deng S K, Yamamoto T, Kono Y, Ohya N, Takabatake T 2010 J. Alloy. Compd. 507 1

    [22]

    Deng S K, Saiga Y, Kajisa K, Takabatake T 2011 J. Appl. Phys. 109 103704

    [23]

    Kishimoto K, Yamamoto H, Akai K, Koyanagi T 2012 J. Appl. Phys. 45 445306

    [24]

    Chen Y X, Du B L, Saiga Y, Kajisa K, Takabatake T 2013 J. Appl. Phys. 46 205302

    [25]

    Xiong C, Deng S K, Tang X F, Qi Q, Zhang Q J 2008 Acta Phys. Sin. 57 1190 [熊聪, 邓书康, 唐新峰, 祁琼, 张清杰 2008 物理学报 57 1190]

    [26]

    Caillt T, Borahchevsky A, Fleurial J P 1997 Mater. Res. Soc. Symp. Proc. 478 103

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  • Received Date:  03 September 2013
  • Accepted Date:  27 September 2013
  • Published Online:  20 December 2013

Growth and thermoelectric properties of Ge doped n-type Sn-based type-Ⅷ single crystalline clathrate

  • 1. Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology of Ministry of Education, Solar Energy Research Institution, Yunnan Normal University, Kunming 650092, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 51262032).

Abstract: Single crystalline samples of type-Ⅷ Ba8Ga16-xGexSn30 (0 ≤ x ≤ 1.0) clathrates are fabricated by the Sn flux method. The structures and thermoelectric properties of the samples at temperatures ranging from 300 to 600 K are studied. Research results show that the actual content of Ge is relatively small in single crystal. The lattice parameters of the samples decrease slightly with the increase of the doping composition of Ge. The Ge doped samples have lower carrier density and higher carrier mobility than undoped samples. The Seebeck coefficients of all the doped samples are negative, and their absolute values are smaller than those of the undoped one. However, the electrical conductivity of the sample is increased by 62% after doping Ge and the sample of x=0.5 obtains a maximum value of ZT (1.25) at about 500 K.

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