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MONTE CARLO SIMULATION OF ELECTRON TRANSPORT IN 6H-SiC

SHANG YE-CHUN ZHANG YI-MEN ZHANG YU-MING

MONTE CARLO SIMULATION OF ELECTRON TRANSPORT IN 6H-SiC

SHANG YE-CHUN, ZHANG YI-MEN, ZHANG YU-MING
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Publishing process
  • Received Date:  05 December 1999
  • Accepted Date:  03 February 2000
  • Published Online:  20 September 2000

MONTE CARLO SIMULATION OF ELECTRON TRANSPORT IN 6H-SiC

  • 1. 西安电子科技大学微电子所,西安 710071

Abstract: Temperature-and electric field-dependent electron transport in 6H-SiC has been s tudied by single-particle Monte Carlo technique,and the Hall electron mobility i n 6H-SiC has been measured over the temperature range 77K‖c/μ⊥c in 6H-SiC is nearly 5,and the saturation velocity vs is 2×107cm/s.The simulated results are in good agreement with measured data in a wide range of temperature and electric field.

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