Leakage current model of InGaZnO thin film transistor

Deng Xiao-Qing; Deng Lian-Wen; He Yi-Ni; Liao Cong-Wei; Huang Sheng-Xiang; Luo Heng

doi:10.7498/aps.68.20182088

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Deng Xiao-Qing, Deng Lian-Wen, He Yi-Ni, Liao Cong-Wei, Huang Sheng-Xiang, Luo Heng. Leakage current model of InGaZnO thin film transistorJ. Acta Physica Sinica, 2019, 68(5): 057302. DOI: 10.7498/aps.68.20182088

Citation:

Deng Xiao-Qing, Deng Lian-Wen, He Yi-Ni, Liao Cong-Wei, Huang Sheng-Xiang, Luo Heng. Leakage current model of InGaZnO thin film transistorJ. Acta Physica Sinica, 2019, 68(5): 057302. DOI: 10.7498/aps.68.20182088

Citation:

Deng Xiao-Qing, Deng Lian-Wen, He Yi-Ni, Liao Cong-Wei, Huang Sheng-Xiang, Luo Heng. Leakage current model of InGaZnO thin film transistorJ. Acta Physica Sinica, 2019, 68(5): 057302. DOI: 10.7498/aps.68.20182088