Temperature dependence of single-event transient response in devices with selective-buried-oxide structure

Gao Zhan-Zhan; Hou Peng-Fei; Guo Hong-Xia; Li Bo; Song Hong-Jia; Wang Jin-Bin; Zhong Xiang-Li

doi:10.7498/aps.68.20191932

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Gao Zhan-Zhan, Hou Peng-Fei, Guo Hong-Xia, Li Bo, Song Hong-Jia, Wang Jin-Bin, Zhong Xiang-Li. Temperature dependence of single-event transient response in devices with selective-buried-oxide structureJ. Acta Physica Sinica, 2019, 68(4): 048501. DOI: 10.7498/aps.68.20191932

Citation:

Gao Zhan-Zhan, Hou Peng-Fei, Guo Hong-Xia, Li Bo, Song Hong-Jia, Wang Jin-Bin, Zhong Xiang-Li. Temperature dependence of single-event transient response in devices with selective-buried-oxide structureJ. Acta Physica Sinica, 2019, 68(4): 048501. DOI: 10.7498/aps.68.20191932

Citation:

Gao Zhan-Zhan, Hou Peng-Fei, Guo Hong-Xia, Li Bo, Song Hong-Jia, Wang Jin-Bin, Zhong Xiang-Li. Temperature dependence of single-event transient response in devices with selective-buried-oxide structureJ. Acta Physica Sinica, 2019, 68(4): 048501. DOI: 10.7498/aps.68.20191932