Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltage

Zhang Lin; Ma Lin-Dong; Du Lin; Li Yan-Bo; Xu Xian-Feng; Huang Xin-Rong

doi:10.7498/aps.72.20230207

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Zhang Lin, Ma Lin-Dong, Du Lin, Li Yan-Bo, Xu Xian-Feng, Huang Xin-Rong. Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltageJ. Acta Physica Sinica, 2023, 72(13): 138501. DOI: 10.7498/aps.72.20230207

Citation:

Zhang Lin, Ma Lin-Dong, Du Lin, Li Yan-Bo, Xu Xian-Feng, Huang Xin-Rong. Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltageJ. Acta Physica Sinica, 2023, 72(13): 138501. DOI: 10.7498/aps.72.20230207

Citation:

Zhang Lin, Ma Lin-Dong, Du Lin, Li Yan-Bo, Xu Xian-Feng, Huang Xin-Rong. Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltageJ. Acta Physica Sinica, 2023, 72(13): 138501. DOI: 10.7498/aps.72.20230207