Degradation and physical mechanism of NBT in deep submicron PMOSFET's
Acta Physica Sinica
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Acta Phys. Sin.  2005, Vol. 54 Issue (3): 1373-1377    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Degradation and physical mechanism of NBT in deep submicron PMOSFET's
Liu Hong Xia, Zheng Xue Feng, Hao Yue
西安电子科技大学微电子研究所,西安710071
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