A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin.  2009, Vol. 58 Issue (12): 8584-8590    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique
Ge Ji, Jin Zhi, Su Yong-Bo, Cheng Wei, Liu Xin-Yu, Wu De-Xin
中国科学院微电子研究所,北京 100029
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn