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异质结界面电荷的存在改变了异质结的内建势, 这引起了界面势垒尖峰高度和形状的扰动, 从而使异质结界面载流子的输运产生相应的变化, 最终导致异质结双极晶体管 (HBT) 性能的改变. 基于热场发射-扩散模型, 对异质结界面电荷对InP/InGaAs HBT性能的改变做了研究, 得到结论是正极性的界面电荷有利于InP/InGaAs HBT的直流和高频特性的改善, 而负极性的界面电荷则使器件的直流和高频特性变差.
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关键词:
- InP/InGaAs异质结双极晶体管 /
- 界面电荷 /
- 内建势 /
- 热场发射
[1] Cui H L, Ren X M, Huang H 2012 Journal of Optoelectronics Laser 23 1067 (in Chinese) [崔海林, 任晓敏, 黄辉 2012 光电子·激光 23 1067]
[2] Xu A H, Zou L, Chen X J, Qi M 2004 Chinese Journal of Rare Metals 28 516 (in Chinese) [徐安怀, 邹璐, 陈晓杰, 齐鸣 2004 稀有金属 28 516]
[3] Jung H T, Wen S L, Chao Y T, Ye S S, Ma Y C, Jhou J C, Wu Y R, Ouyang J J 2012 Thin Solid Films 521 172
[4] Liu H G, Jin Z, Su Y B, Wang X T, Chang H D, Zhou L, Liu X Y, Wu D X 2010 Chin. Phys. Lett. 27 058502
[5] Chen T P, Lee C J, Chen L Y, Tsai T H, Liu Y J, Huang C C, Chen T Y, Cheng S Y, Liu W C 2009 Superlattices and Microstructures 46 715
[6] Eladl S M 2008 Microelectronics Journal 39 1649
[7] Gourab D, Sukla B 2012 Journal of semiconductors 33 054002
[8] Fuente J G, Viktor K 2002 Solid-State Electronics 46 1273
[9] Yang K, East J R, Haddad G I 1994 IEEE Trans Electron Devices 41 138
[10] Zhou S L, Ren X M 2008 Journal of Semiconductors 29 741 (in Chinese) [周守利, 任晓敏 2008 半导体学报 29 741]
[11] Zhou S L, Yang W C, Ren H L, Li J 2012 Acta Phys. Sin. 61 128501 (in Chinese) [周守利, 杨万春, 任宏亮, 李伽 2012 物理学报 61 128501]
[12] Zhang Y R, Zhang B, Li Z J, Deng X C 2010 Chin. Phys. B 19 067102
[13] Jain S C, Roulston D J 1991 Solid-State Electronics 34 453
[14] Leeor K, Yoram S 1999 Surface Science Reports 37 1
[15] Se W K, Kang S R, Seung H S, Kwan Y K, Gu C K, Lee S Y, Chang M C, So R P, Jun H P, Ki C C, Song K J, Kim D H, Dong M K 2008 Microelectronics Reliability 48 382
[16] Kaipa P K, Amitava D 1998 Solid-State Electronics 42 1779
-
[1] Cui H L, Ren X M, Huang H 2012 Journal of Optoelectronics Laser 23 1067 (in Chinese) [崔海林, 任晓敏, 黄辉 2012 光电子·激光 23 1067]
[2] Xu A H, Zou L, Chen X J, Qi M 2004 Chinese Journal of Rare Metals 28 516 (in Chinese) [徐安怀, 邹璐, 陈晓杰, 齐鸣 2004 稀有金属 28 516]
[3] Jung H T, Wen S L, Chao Y T, Ye S S, Ma Y C, Jhou J C, Wu Y R, Ouyang J J 2012 Thin Solid Films 521 172
[4] Liu H G, Jin Z, Su Y B, Wang X T, Chang H D, Zhou L, Liu X Y, Wu D X 2010 Chin. Phys. Lett. 27 058502
[5] Chen T P, Lee C J, Chen L Y, Tsai T H, Liu Y J, Huang C C, Chen T Y, Cheng S Y, Liu W C 2009 Superlattices and Microstructures 46 715
[6] Eladl S M 2008 Microelectronics Journal 39 1649
[7] Gourab D, Sukla B 2012 Journal of semiconductors 33 054002
[8] Fuente J G, Viktor K 2002 Solid-State Electronics 46 1273
[9] Yang K, East J R, Haddad G I 1994 IEEE Trans Electron Devices 41 138
[10] Zhou S L, Ren X M 2008 Journal of Semiconductors 29 741 (in Chinese) [周守利, 任晓敏 2008 半导体学报 29 741]
[11] Zhou S L, Yang W C, Ren H L, Li J 2012 Acta Phys. Sin. 61 128501 (in Chinese) [周守利, 杨万春, 任宏亮, 李伽 2012 物理学报 61 128501]
[12] Zhang Y R, Zhang B, Li Z J, Deng X C 2010 Chin. Phys. B 19 067102
[13] Jain S C, Roulston D J 1991 Solid-State Electronics 34 453
[14] Leeor K, Yoram S 1999 Surface Science Reports 37 1
[15] Se W K, Kang S R, Seung H S, Kwan Y K, Gu C K, Lee S Y, Chang M C, So R P, Jun H P, Ki C C, Song K J, Kim D H, Dong M K 2008 Microelectronics Reliability 48 382
[16] Kaipa P K, Amitava D 1998 Solid-State Electronics 42 1779
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