基于表面等离子体共振增强的硅基锗金属-半导体-金属光电探测器的设计研究

洪霞; 郭雄彬; 方旭; 李衎; 叶辉

doi:10.7498/aps.62.178502

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摘要

金属-半导体-金属光电探测器的光栅结构可激发表面等离子体, 有效增强探测器的吸收. 为深入研究器件结构对于表面等离子体的激发及共振增强的影响, 本文提出了一种具有超薄有源层的硅基锗金属-半导体-金属光电探测器的设计方法. 采用时域有限差分的方法详细分析了光栅周期、光栅厚度、光栅间距及有源层厚度对于表面等离子体共振增强器件性能的影响, 通过仿真模拟获得了器件的最佳结构, 详细地分析了各个界面激发的表面等离子体及其共振模式对于光谱吸收增强的机理. 仿真结果表明, 有源层锗的厚度为400nm的超薄器件在通信波段具有较高的吸收, 尤其在1550nm波长处器件的归一化的光谱吸收率可以高达53.77%, 增强因子达7.22倍. 利用共振效应能够极大地提高高速器件的光电响应, 为解决光电探测器响应度与响应速度之间的相互制约关系提供了有效途径.

关键词:

作者及机构信息

1.
浙江大学光电信息工程学系, 现代光学仪器国家重点实验室, 杭州 310027;

2.
浙江省能源与核技术应用研究院, 杭州 310012

基金项目: 国家重点基础研究发展计划(973计划)(批准号: 2013CB6321040);浙江省自然科学基金(批准号: LZ12F04002);浙江省科技计划(批准号: 2011F20021)和浙江大学现代光学仪器国家重点实验室项目(批准号: moi2010021)资助的课题.

参考文献

[1]	Michel J, Liu J, Kimerling L C 2010 Nat. Photon. 4 527
[2]	Huang Z H 2006 Ph.D. Dissertation (Texas: The University of Texas at Austin)
[3]	Palik E D 1985 Handbook of Optical Constants of Solids (Vol.1) (New York: Academic) pp467-568
[4]	Barnes W L, Dereux A, Ebbesen T W 2003 Nature 424 824
[5]	Schuller J A, Barnard E S, CAI W, Jun Y C, White J S, Brongersma M I 2010 Nat. Mat. 9 193
[6]	Schaadt D, Feng B, Yu E 2005 Appl. Phys. Lett. 80 063106
[7]	Tang L, Kocabas S E, Latif S, Okyay A K, Sebastien D, Gagnon L, Saraswat K C, Miller D A B 2008 Nat. Photon. 2 226
[8]	Shackleford J A, Grote R, Currie M, Spanier J E, Nabet B 2009 Appl. Phys. Lett. 94 083501
[9]	Das N, Karar A, Vasiliev M, Tan C L, Alameh K, Lee Y T 2011 Opt. Comm. 284 1694
[10]	Tan C L, Lysak V V, Das N, Karar A, Alameh K, Lee Y T 2010 Proceedings of 10th IEEE Conference on the Nanotechnology (IEEE-NANO), Korea, Aug. 17-20, 2010 p849
[11]	Ren F F, Ang K W, Song J F, Fang Q, Yu M B, Lo G Q, Kwong D L 2010 Appl. Phys. Lett. 97 091102
[12]	Ren F F, Ang K W, Ye J D, Yu M B, Lo G Q, Kwong D L 2011 Nano Lett. 11 1289
[13]	Eryilmaz S B, Tidin O, Okyay A K 2012 IEEE Photon. Tech. Lett. 24 548
[14]	Masouleh F F, Das N, Mashayekhih R 2012 Proceedings of the Optical Interconnects Conference, New Maxico, May 20-23, 2012 p108
[15]	Yang H W, Chen R S, Zhang Y 2006 Acta Phys. Sin. 55 3464 (in Chinese) [杨宏伟, 陈如山, 张云 2006 物理学报 55 3464]
[16]	Liu S B, Zhu C X, Yuan N C 2006 Acta Phys. Sin. 54 2804 (in Chinese) [刘少斌, 朱传喜, 袁乃昌 2005 物理学报 54 2804]
[17]	Maier S A 2007 Plasmonics: fundamentals and applications (Vol.1) (New York: Springer) p44-46
[18]	Bai W L, Guo B S, Cai L K, Gan Q Q, Song G F 2009 Acta Phys. Sin. 58 8021 (in Chinese) [白文理, 郭宝山, 蔡利康, 甘巧强, 宋国峰 2009 物理学报 58 8021]
[19]	Crouse D, Keshavareddy P 2005 Opt. Exp. 13 7760
[20]	White J S, Veronis G, Yu Z, Barnard E S, Chandran A, Fan S H, Brongersma M L 2009 Opt. Lett. 34 686
[21]	Bouchon P, Pardo F, Potirer B, Ferlazzo L, Ghenuche P, Dagher G, Dupuis C, Bardou N, Haïdar R, Pelouard J L 2011 Appl. Phys. Lett. 98 191109
[22]	Han Z, Forsberg E, He S 2007 IEEE Photon. Tech. Lett. 19 91

施引文献

[1]	Michel J, Liu J, Kimerling L C 2010 Nat. Photon. 4 527
[2]	Huang Z H 2006 Ph.D. Dissertation (Texas: The University of Texas at Austin)
[3]	Palik E D 1985 Handbook of Optical Constants of Solids (Vol.1) (New York: Academic) pp467-568
[4]	Barnes W L, Dereux A, Ebbesen T W 2003 Nature 424 824
[5]	Schuller J A, Barnard E S, CAI W, Jun Y C, White J S, Brongersma M I 2010 Nat. Mat. 9 193
[6]	Schaadt D, Feng B, Yu E 2005 Appl. Phys. Lett. 80 063106
[7]	Tang L, Kocabas S E, Latif S, Okyay A K, Sebastien D, Gagnon L, Saraswat K C, Miller D A B 2008 Nat. Photon. 2 226
[8]	Shackleford J A, Grote R, Currie M, Spanier J E, Nabet B 2009 Appl. Phys. Lett. 94 083501
[9]	Das N, Karar A, Vasiliev M, Tan C L, Alameh K, Lee Y T 2011 Opt. Comm. 284 1694
[10]	Tan C L, Lysak V V, Das N, Karar A, Alameh K, Lee Y T 2010 Proceedings of 10th IEEE Conference on the Nanotechnology (IEEE-NANO), Korea, Aug. 17-20, 2010 p849
[11]	Ren F F, Ang K W, Song J F, Fang Q, Yu M B, Lo G Q, Kwong D L 2010 Appl. Phys. Lett. 97 091102
[12]	Ren F F, Ang K W, Ye J D, Yu M B, Lo G Q, Kwong D L 2011 Nano Lett. 11 1289
[13]	Eryilmaz S B, Tidin O, Okyay A K 2012 IEEE Photon. Tech. Lett. 24 548
[14]	Masouleh F F, Das N, Mashayekhih R 2012 Proceedings of the Optical Interconnects Conference, New Maxico, May 20-23, 2012 p108
[15]	Yang H W, Chen R S, Zhang Y 2006 Acta Phys. Sin. 55 3464 (in Chinese) [杨宏伟, 陈如山, 张云 2006 物理学报 55 3464]
[16]	Liu S B, Zhu C X, Yuan N C 2006 Acta Phys. Sin. 54 2804 (in Chinese) [刘少斌, 朱传喜, 袁乃昌 2005 物理学报 54 2804]
[17]	Maier S A 2007 Plasmonics: fundamentals and applications (Vol.1) (New York: Springer) p44-46
[18]	Bai W L, Guo B S, Cai L K, Gan Q Q, Song G F 2009 Acta Phys. Sin. 58 8021 (in Chinese) [白文理, 郭宝山, 蔡利康, 甘巧强, 宋国峰 2009 物理学报 58 8021]
[19]	Crouse D, Keshavareddy P 2005 Opt. Exp. 13 7760
[20]	White J S, Veronis G, Yu Z, Barnard E S, Chandran A, Fan S H, Brongersma M L 2009 Opt. Lett. 34 686
[21]	Bouchon P, Pardo F, Potirer B, Ferlazzo L, Ghenuche P, Dagher G, Dupuis C, Bardou N, Haïdar R, Pelouard J L 2011 Appl. Phys. Lett. 98 191109
[22]	Han Z, Forsberg E, He S 2007 IEEE Photon. Tech. Lett. 19 91

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基于表面等离子体共振增强的硅基锗金属-半导体-金属光电探测器的设计研究

1. 浙江大学光电信息工程学系, 现代光学仪器国家重点实验室, 杭州 310027;

2. 浙江省能源与核技术应用研究院, 杭州 310012

基金项目:

国家重点基础研究发展计划(973计划)(批准号: 2013CB6321040)

浙江省自然科学基金(批准号: LZ12F04002)

浙江省科技计划(批准号: 2011F20021)和浙江大学现代光学仪器国家重点实验室项目(批准号: moi2010021)资助的课题.

收稿日期: 2013-04-17

修回日期: 2013-05-09

刊出日期: 2013-09-05

摘要: 金属-半导体-金属光电探测器的光栅结构可激发表面等离子体, 有效增强探测器的吸收. 为深入研究器件结构对于表面等离子体的激发及共振增强的影响, 本文提出了一种具有超薄有源层的硅基锗金属-半导体-金属光电探测器的设计方法. 采用时域有限差分的方法详细分析了光栅周期、光栅厚度、光栅间距及有源层厚度对于表面等离子体共振增强器件性能的影响, 通过仿真模拟获得了器件的最佳结构, 详细地分析了各个界面激发的表面等离子体及其共振模式对于光谱吸收增强的机理. 仿真结果表明, 有源层锗的厚度为400nm的超薄器件在通信波段具有较高的吸收, 尤其在1550nm波长处器件的归一化的光谱吸收率可以高达53.77%, 增强因子达7.22倍. 利用共振效应能够极大地提高高速器件的光电响应, 为解决光电探测器响应度与响应速度之间的相互制约关系提供了有效途径.

关键词:

Design of silicon based germanium metal-semiconductor-metal photodetector enhanced by surface plasmon resonance

1.
Department of Optical Engineering, Zhejiang University, State Key Laboratory of Modern Optical Instrumentation, Hangzhou 310027, China;

2.
Research Institute of Energy and Nuclear Technology Application of Zhejiang Province, Hangzhou 310012, China

Fund Project:

Project supported by the National Basic Research Program of China(Grant No. 2013CB6321040), the Natural Science Foundation of Zhejiang province of China (Grant No. LZ12F04002), the Science and Technology Project of Zhejiang Province of China (Grant No. 2011F20021), and the Research Foundation of State Key Laboratory of Modern Optical Instrumentation, China (Grant No. moi2010021).

Received Date: 17 April 2013

Accepted Date: 09 May 2013

Published Online: 05 September 2013

Abstract: Surface plasmon excited by metallic grating integrated on metal-semiconductor-metal can greatly improve the absorption of devices. In order to deeply explore the excitation and resonant discipline of surface plasmon, a design of metal-semiconductor-metal based on ultra-thin germanium is proposed. By using finite difference time domain (FDTD) method, the effects of grating period, grating depth, grating space, and thickness of the active layer on the performance of surface plasmon resonance supported device are investigated in detail. The structure parameters of the device are optimized, and the mechanism of surface plasmon excited by each interface as well as spectrum absorption enhanced by surface plasmon resonance is analyzed in detail. Simulation results show that the germanium device with an ultra-thin active layer of 400 nm has a high absorption in the communication band, especially at the wavelength of 1550 nm the normalized spectral absorption can be as high as 53.77% with an enhancement factor of 7.22. Surface plasmon resonance can greatly improve the optical response of high-speed optoelectronic device, thus an efficient way is provided to solve the trade-off between photodetector responsivity and speed of the device.

Keywords:

surface plasmon /
germanium photodetector /
finite difference time domain (FDTD) simulation

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