Epitaxy structure of a 1.5 μm n-p-n InGaAsP-InP transistor laser
Acta Physica Sinica
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Acta Phys. Sin.  2010, Vol. 59 Issue (9): 6193-6199    
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Epitaxy structure of a 1.5 μm n-p-n InGaAsP-InP transistor laser
Huang Xiao-Dong1, Zhou Ning1, Duan Zi-Gang2, Xu Guang-Hui2, Chai Guang-Yue2
(1)Accelink Technologies Co. Ltd., Hongshan District, Wuhan 430074, China; (2)Key Laboratory of Optoelectronic Devices and Systems of the Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
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