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With the globally enhancing demand for the energy saving and environmental protection of electronic products, the requirement for Schottky diode which is widely used in electronic products becomes higher and higher. The trench metal-oxide-semiconductor barrier Schottky (TMBS) diode is more and more favored because of its excellent performance. The shape of the trench plays an important role in determining the electrical properties of the Schottky diode. However, there is no intensive study on this point. In this study, we propose two novel trench structures, i. e., filleted corner trench and ladder trench. By performing the simulation with Medici, it is found that compared with the traditional trench TMBS diode, the filleted corner trench TMBS diode has a breakdown voltage with 15.8% increase under the conditions of the same leakage current and the forward turn-on voltage. Also, the ladder trench TMBS diode can reduce the leakage current by 35%, while have a breakdown voltage not smaller than the right angle trench TMBS and a forward turn-on voltage only a little bit higher than the right angle trench TMBS.
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Keywords:
- Schottky diode /
- metal-oxide-semiconductor structure /
- trench barrier Schottky diodes /
- trench shape
[1] Padovani F A, Stratton R 1966 Solid State Electron. 9 695
[2] Sah C T, Noyce R N, Shockley W 1957 Proc. IRE 45 1228
[3] Mehrotra M, Baliga B J 1994 Solid State Electron. 38 801
[4] Baliga B J 1996 Power Semiconductor Devices (Boston: PWS Publishing Company)
[5] Rideout V L, Crowell C R 1970 Solid State Electron. 13 993
[6] Sze S M 1981 Physics of Semiconductor Devices (2nd Ed.) (USA: Wiley Inter Science)
[7] Mahalingam S, Baliga B J 1999 Solid State Electron. 43 1
[8] Juang M H, Yu J, Jang S L 2011 Curr. Appl. Phys. 11 698
[9] Li W Y, Ru G P, Jiang Y L, Ruan G 2011 Chin. Phys. B 20 087304
[10] MEDICI D-2010.03-0 a 2D Device Simulator TMA Palo Alto USA
[11] Mckay K G 1954 Phys. Rev. 94 877
[12] Mcintyre R J 1966 IEEE. Trans. Electron. Dev. 13 164
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[1] Padovani F A, Stratton R 1966 Solid State Electron. 9 695
[2] Sah C T, Noyce R N, Shockley W 1957 Proc. IRE 45 1228
[3] Mehrotra M, Baliga B J 1994 Solid State Electron. 38 801
[4] Baliga B J 1996 Power Semiconductor Devices (Boston: PWS Publishing Company)
[5] Rideout V L, Crowell C R 1970 Solid State Electron. 13 993
[6] Sze S M 1981 Physics of Semiconductor Devices (2nd Ed.) (USA: Wiley Inter Science)
[7] Mahalingam S, Baliga B J 1999 Solid State Electron. 43 1
[8] Juang M H, Yu J, Jang S L 2011 Curr. Appl. Phys. 11 698
[9] Li W Y, Ru G P, Jiang Y L, Ruan G 2011 Chin. Phys. B 20 087304
[10] MEDICI D-2010.03-0 a 2D Device Simulator TMA Palo Alto USA
[11] Mckay K G 1954 Phys. Rev. 94 877
[12] Mcintyre R J 1966 IEEE. Trans. Electron. Dev. 13 164
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