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Owing to the high density and high mobility of two-dimensional electron gas (2DEG) induced by strong spontaneous polarization and piezoelectric polarization effect, AlGaN/GaN Schottky barrier diodes (SBDs) with high output current density and low on-resistance have proved to be a promising candidate. Anode of GaN SBD is the core structure, which affects the device performance such as turn-on voltage, reverse current, on-resistance, and breakdown voltage. Therefore, idealized Schottky junction with low interface state density is very important in achieving high-performance GaN SBD. In this work, AlGaN/GaN SBD with low work-function metal W as anode is fabricated, and the post-anode-annealing (PAA) treatment is found to be effective in promoting the bonding reaction between anode metal and GaN in the anode region. Comparing with GaN SBDs without PAA treatment, the interface state density decreases from 9.48×1015 eV–1·cm–2 to 1.77×1013 eV–1·cm–2 after PAA treatment. The reverse leakage current is reduced by two orders, which ascribes to the idealized anode interface with low interface state density. Meanwhile, the influence of interface state on carriers in the forward conduction process is also suppressed, and the differential on-resistance of the fabricated GaN SBDs decreases from 17.05 Ω·mm to 12.57 Ω·mm. It is obvious that the PAA process proves to be an effective method to suppress the interface states density at M/S interface, thus significantly improving the performance of GaN SBD, which is the key technology in fabricating the high-performance GaN device.
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图 1 平面阳极结构AlGaN/GaN SBD器件截面图
Figure 1. Schematic cross-sectional of AlGaN/GaN SBD with planar anode.
图 2 PAA SBD与Ref SBD器件的正向导通特性(a)和反向漏电特性(b)
Figure 2. Forward I-V characteristics (a) and reverse I-V characteristics (b) of the fabricated PAA SBD and Ref SBD.
图 3 对数坐标下, 器件正向特性随温度的变化 (a) PAA SBD; (b) Ref SBD
Figure 3. Temperature-dependent forward I-V characteristics of devices in semi-log scale: (a) PAA SBD; (b) Ref SBD.
图 4 PAA SBD和Ref SBD器件势垒高度随温度的变化
Figure 4. Extracted Schottky barrier height of the fabricated PAA SBD and Ref SBD as a function of the measured temperature.
图 5 不同频率下器件的电容随阳极偏压的变化 (a) PAA SBD; (b) Ref SBD
Figure 5. Frequency-dependent C-V curves of device: (a) PAA SBD; (b) Ref SBD.
图 6 (a)陷阱态评估等效电路图; (b) PAA SBD和Ref SBD电导随角频率的变化
Figure 6. (a) Equivalent circuit for the trap state evaluation; (b) frequency-dependent G/ω-ω curves of the fabricated PAA SBD and Ref SBD.
图 7 不同频率下器件的电导随阳极偏压的变化 (a) PAA SBD; (b) Ref SBD
Figure 7. Frequency-dependent G/ω-V curves of device: (a) PAA SBD; (b) Ref SBD.
图 8 PAA SBD (a)和Ref SBD (b)的界面态密度随测试频率的变化
Figure 8. Variation of NSS as a function of the measured frequency of (a) PAA SBD and (b) Ref SBD.
图 9 (a) PAA SBD与Ref SBD器件击穿特性; (b)器件阳极界面陷阱漏电的能带结构示意图
Figure 9. (a) Reverse breakdown characteristics of the fabricated PAA SBD and Ref SBD; (b) energy band diagram of trap induced leakage current in anode contact.
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[1] Liu X K, Liu Q, Li C, Wang J F, Yu W J, Xu K, Ao J P 2017 Jpn. J. Appl. Phys. 56 026501
Google Scholar
[2] Bajaj S, Akyol F, Krishnamoorthy S, Zhang Y W, Rajan S 2016 Appl. Phys. Lett. 109 133508
Google Scholar
[3] 武鹏, 张涛, 张进成, 郝跃 2022 物理学报 71 158503
Google Scholar
Wu P, Zhang T, Zhang J C, Hao Y 2022 Acta Phys. Sin. 71 158503
Google Scholar
[4] 崔艺馨, 马英起, 上官士鹏, 康玄武, 刘鹏程, 韩建伟 2022 物理学报 71 136102
Google Scholar
Cui Y X, Ma Y Q, Shangguan S P, Kang X W, Liu P C, Han J W 2022 Acta Phys. Sin. 71 136102
Google Scholar
[5] 陈睿, 梁亚楠, 韩建伟, 王璇, 杨涵, 陈钱, 袁润杰, 马英起, 上官士鹏 2021 物理学报 70 116102
Google Scholar
Chen R, Liang Y N, Han J W, Wang X, Yang H, Chen Q, Yuan R J, Ma Y Q, Shangguan S P 2021 Acta Phys. Sin. 70 116102
Google Scholar
[6] Nela L, Erp R V, Kampitsis G, Yildirim H K, Ma J, Matioli E 2021 IEEE T. Power Electr. 36 1269
Google Scholar
[7] Nela L, Kampitsis G, Ma J, Matioli E 2020 IEEE Electron Dev. Lett. 41 99
Google Scholar
[8] Li X D, Geens K, Guo W M, You S Z, Zhao M, Fahle D, Odnoblyudov V, Groeseneken G, Decoutere S 2019 IEEE Electron Dev. Lett. 40 1499
Google Scholar
[9] Bahat-Treidel E, Hilt O, Zhytnytska R, Wentzel A, Meliani C, Wurfl J, Trankle G 2012 IEEE Electron Dev. Lett. 33 357
Google Scholar
[10] Hsin Y M, Ke T Y, Lee G Y, Chyi J I, Chiu H C 2012 Phys. Status Solidi C 9 949
Google Scholar
[11] Han S W, Yang S, Li R, Wu X K, Sheng K 2019 IEEE T. Power Electr. 34 5012
Google Scholar
[12] Xu R, Chen P, Liu M H, Zhou J, Li Y M, Cheng K, Liu B, Chen D J, Xie Z L, Zhang R, Zheng Y D 2021 IEEE Electron Dev. Lett. 42 208
Google Scholar
[13] Zhang T, Zhang J C, Zhou H, Wang Y, Chen T S, Zhang K, Zhang Y C, Dang K, Bian Z K, Zhang J F, Xu S R, Duan X L, Ning J, Hao Y 2019 IEEE Electron Dev. Lett. 40 1583
Google Scholar
[14] Zhu M D, Song B, Qi M, Hu Z Y, Nomoto K, Yan X D, Cao Y, Johnson W, Kohn E, Jena D, Xing H L G 2015 IEEE Electron Dev. Lett. 36 375
Google Scholar
[15] Tsou C W, Wei K P, Lian Y W, Hsu S S H 2016 IEEE Electron Dev. Lett. 37 70
Google Scholar
[16] Gao J N, Jin Y F, Xie B, Wen C P, Hao Y L, Shen B, Wang M J 2018 IEEE Electron Dev. Lett. 39 859
Google Scholar
[17] Zhang T, Zhang J C, Zhou H, Chen T S, Zhang K, Hu Z Z, Bian Z K, Dang K, Wang Y, Zhang L, Ning J, Ma P J, Hao Y 2018 IEEE Electron Dev. Lett. 39 1548
Google Scholar
[18] Zhang T, Wang Y, Zhang Y N, Lü Y G, Ning J, Zhang Y C, Zhou H, Duan X L, Zhang J C, Hao Y 2021 IEEE Trans. Electron Dev. 68 2661
Google Scholar
[19] Chen J B, Bian Z K, Liu Z H, Zhu D, Duan X L, Wu Y H, Jia Y Q, Ning J, Zhang J C, Hao Y 2021 J. Alloy Compd. 853 156978
Google Scholar
[20] Du L L, Xin Q, Xu M S, Liu Y X, Mu W X, Yan S Q, Wang X Y, Xin G M, Jia Z T, Tao X T, Song A M 2019 IEEE Electron Dev. Lett. 40 451
Google Scholar
[21] Bilkan Ç, Gümüş A, Altındal Ş 2015 Mater. Sci. Semicond. Process 39 484
Google Scholar
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