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THE PREPARATION AND PHYSICAL PROPERTIES OF B1 STRUCTURE MoNx THIN FILMS

SHI YIN-HUAN ZHAO BAI-RU ZHAO YU-YING LI LIN

THE PREPARATION AND PHYSICAL PROPERTIES OF B1 STRUCTURE MoNx THIN FILMS

SHI YIN-HUAN, ZHAO BAI-RU, ZHAO YU-YING, LI LIN
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  • Received Date:  31 August 1987
  • Published Online:  06 July 2005

THE PREPARATION AND PHYSICAL PROPERTIES OF B1 STRUCTURE MoNx THIN FILMS

  • 1. 中国科学院物理研究所

Abstract: We have measured the superconducting transition temperature Tc and resistivity ρ(T) (from Tc onset to 300 K) of the reactive sputtered MoNx thin films. The X-ray diffraction, Rutherford back scattering (RBS), Auger and XPS technique were used for exmination of these specimens. The results showed that Tc and ρ(T) change with the concentration of nitrogen in thin films obviously. For Bl structure or nitrogen-rich samples, Tc is lower than 4.2 K. dρ/dT is negative as temperature is higher than Tc onset. Auger analysis indicated that the existence of oxygen and carbon could be also the reason for very low Tc and semiconducting behaviour in ρ(T) of this kind of thin films.

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