The Point defect concentrations around voids and dislocations in irradiated materials were studied using reaction-diffusion equations. The equations which contained the terms involving recombination of vacancies and interstitials were solved approximately. It turned out that the effects of the recombination on the sink strengths cannot be neglected when damage dose rate and void size become large Actually, we obtain that when void radius is greater than 200A and damage dose rate reaches 10-2 dPa/s the values of void sink and dislocation sink streng ths exceed more than 50% of those given by previous works.
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